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Wang W.C.,Institute of Physics for Microsystems | Zheng H.W.,Institute of Physics for Microsystems | Liu X.Y.,Institute of Physics for Microsystems | Liu X.S.,Institute of Physics for Microsystems | And 3 more authors.
Chemical Physics Letters | Year: 2010

The surface photovoltage response was investigated in partly c-axis oriented Bi4Ti3O12 thin film deposited on fluorine-doped tin oxide conductive glass substrate by a sol-gel technology. The maximum SPV of BiT film reaches 1.8 mV under the dc bias voltage (+1 V) and is three times larger than that under the zero bias. It is also found that the SPV response intensity increases with the increasing positive field, and the intensity of the SPV signal becomes weak with a reverse response when the negative field increases. It is suggested that the SPV is strongly related to the ferroelectric polarization. © 2010 Elsevier B.V. All rights reserved. Source

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