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Ma X.,Beihang University | Zhang W.,Beihang University | Wang D.,Institute of Northwest Rare Metal Materials | Sun B.,Institute of Northwest Rare Metal Materials | Zhong J.,Institute of Northwest Rare Metal Materials
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering | Year: 2015

Indium Tin Oxide sputtering target (ITO) is widely used in the formation of electrically transparent thin films, which adopt direct current magnetron sputtering process for electrodes in flat panel displays, solar cells, gas sensors and so on. In order to improve ITO thin film property, ITO sputtering target requires high purity, homogeneous microstructure, high density and high electrical conductivity. In the present paper, ITO sputtering targets were fabricated using In2O3-SnO2 mixed powders and tin doped indium oxide powders. Meanwhile, their discrepancies in microstructure and sintering mechanism, especially grain size distribution, grain morphology, major element distribution and sintering rate, were studied. The results show that the sintering rate of the mixed powders is faster than that of the doped powders, but it is difficult to obtain homogeneous microstructure for the mixed powders. In contrast, it is easy to obtain the ITO sputtering target with homogeneous microstructure using the doped powders, under the condition that the decomposition of indium oxide is inhibited in process of sintering. These results are helpful to fabricate ITO sputtering target with good microstructure, while decrease nodulation and improve production efficiency. Copyright © 2015, Northwest Institute for Nonferrous Metal Research. Published by Elsevier BV. All rights reserved. Source


Ma X.,Institute of Northwest Rare Metal Materials | Ma X.,Ningxia University | Sun B.,Institute of Northwest Rare Metal Materials | Zhong J.,Institute of Northwest Rare Metal Materials | And 3 more authors.
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering | Year: 2013

The phase component and surface structure of ITO sputtering target materials fabricated by hot pressing method were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that the peaks of XRD pattern were shifted, which can be explained to the great difference of ion radius between the solute and the solvent. On the other hand, the peak shift of core level in X-ray photoelectron spectrum was due to the increasing occupancy of the ITO conduction band and the increase of Fermi level when Sn was doped. The research is beneficial to fabricate ITO sputtering target material with homogeneous composition and structure and high density. Copyright © 2013, Northwest Institute for Nonferrous Metal Research. Published by Elsevier BV. All rights reserved. Source

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