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Palumbo F.,CONICET | Quinteros C.,CONICET | Campabadal F.,Institute Of Microelectrnica Of Barcelona Imb Cnm | Rafi J.M.,Institute Of Microelectrnica Of Barcelona Imb Cnm | And 2 more authors.
Microelectronic Engineering | Year: 2011

In this paper the electrical characteristics of different atomic layer deposited (ALD) high permittivity dielectric films (Al2O3 and Al2O3/HfO2 nanolaminates) subjected to ion irradiation (25 MeV oxygen ions and 10 MeV protons) are evaluated. The capacitance-voltage (C-V) and current-voltage (I-V) characterization show that high-κ nanolaminates are more tolerant to radiation than the Al 2O3 layers, but suffer radiation soft breakdown (RSBD) events. The main variation on the electrical characterization could be interpreted as a gradual decrease of the dielectric constant and/or as an increase of the series resistance of the device. © 2011 Elsevier B.V. All rights reserved.


Conde A.,University of Barcelona | Martinez C.,University of Barcelona | Jimenez D.,University of Barcelona | Miranda E.,University of Barcelona | And 3 more authors.
Solid-State Electronics | Year: 2012

The breakdown voltage statistics of Al 2O 3/HfO 2 nanolaminate multilayer dielectrics fabricated by atomic layer deposition (ALD) are modeled within the percolation theory. Moreover, the nanolaminate breakdown properties are predicted from the breakdown statistics of the separate materials, thus providing a reliable breakdown design framework for nanolaminates. Comparison with experimental data suggests that the electric field in each of the dielectric layers, rather than the total gate voltage, is the variable that controls the breakdown statistics. © 2011 Elsevier Ltd. All rights reserved.


Campabadal F.,Institute Of Microelectrnica Of Barcelona Imb Cnm | Rafi J.M.,Institute Of Microelectrnica Of Barcelona Imb Cnm | Zabala M.,Institute Of Microelectrnica Of Barcelona Imb Cnm | Beldarrain O.,Institute Of Microelectrnica Of Barcelona Imb Cnm | And 5 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2011

In this work, the electrical characteristics of different atomic layer deposited high-permittivity dielectric films (Al2 O3, HfO2, and a nanolaminate of them), with a physical thickness of about 10 nm, are evaluated. An extensive capacitance-voltage and current-voltage characterization at room temperature is carried out on metal-insulator- semiconductor structures fabricated on different p -type and n -type silicon substrates and with Al as metal gate. HfO2 layers are found to exhibit the higher dielectric constant, but they suffer from the largest hysteresis and leakage currents and the lowest breakdown voltages. The nanolaminate stacks, with an intermediate dielectric constant, are found to exhibit more similarities to the Al2 O3 layers, withstanding the largest voltages of all the studied dielectric films. The electrical degradation of the layers is evaluated by means of consecutive current-voltage ramps and with constant voltage stress experiments. Results on n -type Si, with electron injection from the substrate, indicate a dominant negative charge trapping on all the studied layers, leading to a decrease in the leakage current levels. On the other hand, the results on p -type Si, with electron injection from the metal gate, suggest that not only charge trapping but also creation of new traps, particularly under the higher stress voltages, are responsible for the observed degradation. © 2011 American Vacuum Society.

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