Khuchua N.P.,Tbilisi State University |
Dolidze N.D.,Institute of Micro and Nanoelectronics |
Gapishvili N.G.,Institute of Micro and Nanoelectronics |
Gulyaev R.G.,Institute of Micro and Nanoelectronics |
And 3 more authors.
Nanotechnology Perceptions | Year: 2014
Ion implantation (II) of impurities in a semiconductor followed by annealing belongs to the modern techniques that make it possible to modify the fundamental properties of a material, including optical ones, due to the formation of a great number of defects. It is an important factor for the creation of electromagnetic radiation (EMR) detectors. In the present work, in order to develop EMR detectors p-n type semiconductor structures have been fabricated and studied. The p-layer was formed by implanting boron into commercial single-crystal n-type silicon at different doses (1 × 1013-7.8 × 1014 cm-2) with an acceleration energy of 50 keV and subsequent annealing at 800, 900 and 1000°C for 20 min. Diode structures have been fabricated, current-voltage characteristics have been measured and the material sensitivity to EMR of different wavelengths has been studied. It has been shown that the ion-implanted material exhibits a well-marked photosensitivity in one of the most interesting IR (1.4-2.2 μm) and UV (0.2-0.4 μm) regions. Sensitivity to X-ray exposure has also been revealed. For interpretation of the results, the idea of the appearance of defects as clusters (nanoformations) in the silicon matrix is used. The novelty of the work is both in the experimental results and in the approach "from photosensitivity spectra to defect formation" since most other researchers concentrate their attention on the identification of defects appearing during impurity implantation in Si rather than on the optical properties of the material determined by these defects. © 2014 Collegium Basilea.
Khuchua N.,Tbilisi State University |
Tigishvili M.,Tbilisi State University |
Melkadze R.,Tbilisi State University |
Dolidze N.,Institute of Micro and Nanoelectronics |
And 4 more authors.
Solid State Phenomena | Year: 2016
For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by annealing at 900 °C and 1000 °C (20 min). The IR reflection spectra, Raman spectroscopy and scanning electron microscopy data have been compared with the photosensitivity spectra (1.4–2.2 μm) and with the integrated photoresponse in the IR (1.0–4.1 μm) and UV (0.25–0.4 μm) regions. These studies allow for materials engineering to obtain new data on the influence of defect formation on the optical properties of the material and to evaluate the technological conditions for practical application of the modified material. © (2016) Trans Tech Publications, Switzerland.