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Schmidt G.,Institute of Experimental PhysicsOtto von Guericke University MagdeburgUniversitatsplatz 239106 MagdeburgGermany | Veit P.,Institute of Experimental PhysicsOtto von Guericke University MagdeburgUniversitatsplatz 239106 MagdeburgGermany | Wieneke M.,Institute of Experimental PhysicsOtto von Guericke University MagdeburgUniversitatsplatz 239106 MagdeburgGermany | Bertram F.,Institute of Experimental PhysicsOtto von Guericke University MagdeburgUniversitatsplatz 239106 MagdeburgGermany | And 3 more authors.
Physica Status Solidi (B) Basic Research | Year: 2015

In GaN, the basal plane stacking fault type I1 is a two-dimensional defect characterized by a cubic inclusion within the wurtzite structure. Excitons are bound at the BSF I1 similar to the localization in a quantum well heterostructure leading to an efficient radiative recombination. In this study, we present the optical and structural properties of basal plane stacking faults occurrent in silicon doped a-plane GaN layer by means of highly spatially resolved cathodoluminescence spectroscopy performed in a scanning transmission electron microscope. Drastically reduced panchromatic intensity in the vicinity of partial dislocations terminating the stacking faults, points to their non-radiative character. Originating from intersection of two-dimensional defects, the emission at 379.6nm could be attributed to optically active stair-rod dislocations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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