Institute of Electrophysics and Radiation Technologies of NAS of Ukraine

Kharkiv, Ukraine

Institute of Electrophysics and Radiation Technologies of NAS of Ukraine

Kharkiv, Ukraine
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Belyaeva A.I.,Kharkiv Polytechnic Institute | Galuza A.A.,Kharkiv Polytechnic Institute | Galuza A.A.,Institute of Electrophysics and Radiation Technologies of NAS of Ukraine | Kolenov I.V.,Institute of Electrophysics and Radiation Technologies of NAS of Ukraine | And 4 more authors.
Journal of Nano- and Electronic Physics | Year: 2016

In the paper influence of thermal treatment and equal-channel angular pressing (ECAP) on properties of high-temperature Cu-Cr-Zr composite is studied. It is shown, that proper combination of these two treatments leads to increase of the alloy microhardness while preserving high electroconductivity. It is proved experimentally, that structure formation of Cr-rich precipitates is not connected with the size of the matrix structural elements which is close to the size of the precipitates. High ECAP-induced anisotropy of both structure and spatial arrangement of Cr-rich fibers along and across the sample axis, and of the composite microhardness is revealed. It is shown, that ECAP results in anisotropic strengthening of the composite due to anisotropic distribution of Cr-rich precipitates. Conductivity remains rather high and isotropic since it is determined by the isotropic matrix properties.


Skrypnyk A.I.,National Science Center Kharkov Institute of Physics and Technology | Zakharchenko A.A.,National Science Center Kharkov Institute of Physics and Technology | Khazhmuradov M.A.,National Science Center Kharkov Institute of Physics and Technology | Prokhorenko E.M.,Institute of Electrophysics and Radiation Technologies of NAS of Ukraine | And 2 more authors.
Problems of Atomic Science and Technology | Year: 2013

We used Monte-Carlo method to compare characteristics of HgI2- and HgS-detectors which work in the mode of pulse amplitude analysis. The GEANT4 Simulation Toolkit version 4.9.4p04 and EGSnrc version 4.r2.3.2 were used for modeling gamma-quantum trajectories and calculating response functions in the gamma-quantum energy range between 25 keV and 3 MeV.We supposed that simulated HgI2- and HgS-detectors were equipped with planar contacts and their geometric sizes were 3.14 mm2 £ 1 mm. Basing on calculated detector's response functions, we obtained the e±ciency of gamma-quantum registration and detector sensitivity dependence on energy for energy range from 0.025 to 3 MeV. Statistical characteristics of theoretical response functions and amplitude distributions of pulses are studied taking into account noise and incomplete charge collection distortions of theoretical response functions. Results of simulation show that in the high-energy region the e±ciency of energy conversion of gamma-quanta in charge signal for HgS detectors can exceed the same characteristic for HgI2-detectors up to 10. 12 percents.

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