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Chou Y.-T.,Institute of Electro Optical Engineering | Hsu T.-H.,National Chiao Tung University
Electrochemical and Solid-State Letters | Year: 2011

In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application. © 2010 The Electrochemical Society. Source


Chung W.-F.,Institute of Electronics | Chang T.-C.,National Sun Yat - sen University | Li H.-W.,Institute of Electro Optical Engineering | Tseng T.-Y.,Institute of Electronics | Tai Y.-H.,National Chiao Tung University
Electrochemical and Solid-State Letters | Year: 2011

The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm2 / (V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. © 2010 The Electrochemical Society. Source


Chang H.-W.,National Tsing Hua University | Meng H.-F.,National Chiao Tung University | Horng S.-F.,National Tsing Hua University | Zan H.-W.,Institute of Electro Optical Engineering
Synthetic Metals | Year: 2016

Large-area top-emitting organic light-emitting diodes (TEOLEDs) with multi-layer structure are successfully demonstrated using the solution-processable blade coating on ITO-free substrate. The semitransparent cathode of TEOLED is composed of lithium fluoride (LiF), aluminum (Al) and silver (Ag). The composition of 3 nm Al and 10 nm Ag has a transmittance of 56% and a sheet resistance of 11 Ω/□. It is applied to the green phosphorescence device with an emissive area of 2 cm by 2.5 cm. The maximum current efficiency is 25.2 cd/A with high light-emission uniformity within 10% variation. The large-area TEOLEDs show comparable current efficiency as the small-area devices with an emissive area of 2 mm by 2 mm (having the same device structure) and better efficiency than traditional large-area bottom-emitting devices. Cesium fluoride (CsF) and n-doped electron transport layer are applied to improve electron injection. At 6 V, the luminance is raised from 141 cd/m2 to 502 cd/m2 and 304 cd/m2, respectively. In n-doped device, a simple Al/Ag cathode is used without LiF. © 2015 Elsevier B.V. All rights reserved. Source


Syu Y.-E.,National Sun Yat - sen University | Chang T.-C.,National Sun Yat - sen University | Tsai C.-T.,National Sun Yat - sen University | Chang G.-W.,Institute of Electro Optical Engineering | And 5 more authors.
Electrochemical and Solid-State Letters | Year: 2011

The switching layer with SiGeO x/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO x/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (∼5 nm) is introduced at SiGeO x/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO x/TiN memory cells, the proposed Pt/SiGeO x/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. © 2011 The Electrochemical Society. Source


Huang Y.-P.,National Chiao Tung University | Chen C.-W.,Institute of Electro Optical Engineering | Huang Y.-C.,Institute of Electro Optical Engineering
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

The fast response Fresnel liquid crystal lens with multiple electrodes structure had been proposed and optimized. The multi electrodes in the new Fresnel LC lens were placed at both inner surfaces of LC cell. By supplying specific operating voltages on each electrode, the optimized Fresnel LC lens was closed to the ideal Fresnel lens. The experiment results indicated that the Fresnel LC lens not only performed fast switching rate without over-drive method, but also had the advantage of low operating voltage. Furthermore, by using overdriving method, the response time could be further reduced but just need 15 volts in a short time. It meant that a fast switching between 2D and 3D image display could be obtained by switching Fresnel LC lens on and off. In the end, the fast switching display was also demonstrated. Source

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