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Godignon P.,Autonomous University of Barcelona | Jorda X.,Autonomous University of Barcelona | Vellvehi M.,Autonomous University of Barcelona | Perpina X.,Autonomous University of Barcelona | And 7 more authors.
IEEE Transactions on Industrial Electronics | Year: 2011

This paper reports on the fabrication technology and packaging strategy for 300-V 5-A silicon carbide Schottky diodes with a wide temperature operation range capability (between -170°C and 300°aC). These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. Different endurance tests have been performed to evaluate the diode behavior when working at a high temperature and under severe thermal cycling conditions (ranged from -170 °C to 270 C). The radiation hardness capability has been also tested. It has been found that the hermeticity of the package in a neutral atmosphere is a key aspect to avoid an electrical parameter drift. Moreover, the use of gold metallization and gold wire bonds on the anode allows reducing the diode surface and bonding degradation when compared to Al-containing technology. On the back-side cathode contact, the Ti/Ni/Au metallization and AuGe combination have shown a very good behavior. As a result, the manufactured diodes demonstrated high stability for a continuous operation at 285 C. © 2006 IEEE. Source


Mouawad B.,University of Nottingham | Thollin B.,French Atomic Energy Commission | Buttay C.,Institute National Des Science Appliquees Of Lyon | Dupont L.,French Institute of Science and Technology for Transport | And 6 more authors.
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2015

3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a 3-D technology that uses an innovative assembly method (direct copper-to-copper bonding). The concept and manufacturing process of this technology is described in detail. An accurate electrical characterization is then performed to compare its performance with that of the classical planar structures. © 2014 IEEE. Source


Meghnous A.R.,Institute National Des Science Appliquees Of Lyon | Patino D.,Pontifical Xavierian University | Pham M.T.,Institute National Des Science Appliquees Of Lyon | Lin-Shi X.,Institute National Des Science Appliquees Of Lyon
Proceedings of the IEEE Conference on Decision and Control | Year: 2013

In this article, the design of a feedback control law for DC-DC power converters in continuous conduction mode based on hybrid optimal control theory is presented. The proposed technique consists in determining the singular arcs when a solution of the original optimal control problem cannot be provided. The closed loop stability analysis uses a Lyapunov function based on a port-Hamiltonian representation of the system. The proposed control law is applied to SEPIC converter and validated in simulation. © 2013 IEEE. Source


Meghnous A.R.,Institute National Des Science Appliquees Of Lyon | Pham M.T.,Institute National Des Science Appliquees Of Lyon | Lin-Shi X.,Institute National Des Science Appliquees Of Lyon
Proceedings of the American Control Conference | Year: 2013

This paper presents a nonlinear observer based control of a Single Ended Primary Inductor Converter. A Lyapunov-based control law of the voltage output is proposed. This control law has the property to be simple to implement. The proposed technique uses a nonlinear observer of an averaged model of the converter. The asymptotic stability of the observer error is shown using port Hamiltonian formalism. Stability of the closed loop, including the observer and the control law, is discussed. The proposed observer and control law were validated in simulation and experimentation. © 2013 AACC American Automatic Control Council. Source


Nongaillard M.,Institute National Des Science Appliquees Of Lyon | Lallemand F.,Institute National Des Science Appliquees Of Lyon | Lallemand F.,IPDIA Inc | Allard B.,Institute National Des Science Appliquees Of Lyon | Allard B.,IPDIA Inc
IEEE Transactions on Device and Materials Reliability | Year: 2010

Given an existing manufacturing technology, the influence of the design parameters has been evaluated in order to improve the robustness of the 3-D capacitors. The objective is to select the capacitor patterns that provide a satisfying density with the required robustness with respect to the reliability indicators. The geometrical and manufacturing-related issues are both considered. The main manufacturing issues are the etching, deposition, and warpage of the wafer. The improvements have been observed experimentally for the robustness of the 3-D structures and the density of the capacitor which are increased for several proposed 3-D patterns. All capacitors tested in this paper are realized with PICS technology. © 2010 IEEE. Source

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