Arranz M.A.,University of Castilla - La Mancha |
Colino J.M.,Institute Nanociencia
Journal of Physics: Conference Series | Year: 2010
We have investigated the formation of nanoscale ripples on etched Co/Si(100) films with Ar+ beam in grazing incidence. Topography and dimensions of those nanoscale patterns were characterized by means of atomic force microscopy. Polycrystalline cobalt thin films were deposited by d.c. magnetron sputtering onto Si(100) wafers and, later transferred in situ to a process chamber for the production of ripples. Their average width, W d, and separation between them, i.e. their periodicity Λ, were found to monotonously increase first with the etching time and, finally, reach saturation values for long irradation times (around 30 min). The same Ar + beam etching applied on thicker Co films resulted in much wider and higher ripples, providing a more defined nanostructure for ulterior uniaxial magnetic anisotropy measurements. These changes in the ripple dimensions on increasing the Co film thickness are discussed in terms of the surface roughness in the as-deposited film. © 2010 IOP Publishing Ltd.
Pelado B.,Institute Nanociencia |
Coro J.,Institute Nanociencia |
Coro J.,University of Habana |
De La Cruz P.,Institute Nanociencia |
Langa F.,Institute Nanociencia
Journal of Porphyrins and Phthalocyanines | Year: 2015
The synthesis and structural characterization and the study of the electronic properties of two novel porphyrin-bridge-fullerene molecules, where a free-based porphyrin and fullerene are connected through one and two units of ethylenedioxythienylenevinylene π-conjugated bridges, is reported. The absorption studies, voltamperometric measurements and theoretical calculations at DFT level are presented. A HOMO-LUMO gap as low as 1.41 eV has been found for compound 6. © 2015 World Scientific Publishing Company.