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Sales D.L.,University of Cadiz | Varela M.,Oak Ridge National Laboratory | Pennycook S.J.,Oak Ridge National Laboratory | Galindo P.L.,University of Cadiz | And 4 more authors.
Nanotechnology | Year: 2010

Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski-Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {114} or {118}, ending with the formation of mature quantum wires with {114} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calculation of the strain energy during the quantum wire formation process. The observed morphological evolution is explained in terms of the calculated elastic energy changes at the growth front. Regions of the wetting layer close to the nanostructure perimeters have higher strain energy, causing migration of As atoms towards the quantum wire terraces, where the structure is partially relaxed; the thickness of the wetting layer is reduced in these zones and the island height increases until the (001) facet is removed.© 2010 IOP Publishing Ltd. Source


Martinez-Criado G.,European Synchrotron Radiation Facility | Homs A.,European Synchrotron Radiation Facility | Alen B.,Institute Microelectronica Of Madrid Cnm | Sans J.A.,Polytechnic University of Valencia | And 5 more authors.
Nano Letters | Year: 2012

Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging and calls for further studies on the underlying mechanisms of optoelectronic nanodevices. © 2012 American Chemical Society. Source


Gomis-Bresco J.,University of Valencia | Gomis-Bresco J.,Catalan Institute of Nanoscience and Nanotechnology | Munoz-Matutano G.,University of Valencia | Martinez-Pastor J.,University of Valencia | And 5 more authors.
New Journal of Physics | Year: 2011

We model the time-resolved and time-integrated photoluminescence of a single InAs/GaAs quantum dot (QD) using a random population description. We reproduce the joint power dependence of the single QD exciton complexes (neutral exciton, neutral biexciton and charged trions). We use the model to investigate the selective optical pumping phenomenon, a predominance of the negative trion observed when the optical excitation is resonant to a nonintentional impurity level. Our experiments and simulations determine that the negative charge confined in the QD after exciting resonance to the impurity level escapes in 10 ns. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Source


Munoz M.,Institute Microelectronica Of Madrid Cnm
Nature communications | Year: 2011

Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6-2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes. Source


Hamadeh A.,CEA Saclay Nuclear Research Center | D'Allivy Kelly O.,University Paris - Sud | Hahn C.,CEA Saclay Nuclear Research Center | Meley H.,CEA Saclay Nuclear Research Center | And 15 more authors.
Physical Review Letters | Year: 2014

It is demonstrated that the threshold current for damping compensation can be reached in a 5μm diameter YIG(20nm)|Pt(7nm) disk. The demonstration rests upon the measurement of the ferromagnetic resonance linewidth as a function of Idc using a magnetic resonance force microscope (MRFM). It is shown that the magnetic losses of spin-wave modes existing in the magnetic insulator can be reduced or enhanced by at least a factor of 5 depending on the polarity and intensity of an in-plane dc current Idc flowing through the adjacent normal metal with strong spin-orbit interaction. Complete compensation of the damping of the fundamental mode by spin-orbit torque is reached for a current density of ∼3×1011A·m-2, in agreement with theoretical predictions. At this critical threshold the MRFM detects a small change of static magnetization, a behavior consistent with the onset of an auto-oscillation regime. © 2014 American Physical Society. Source

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