Institute Microelectrnica Of Barcelona Imb Cnm Csic

Barcelona, Spain

Institute Microelectrnica Of Barcelona Imb Cnm Csic

Barcelona, Spain
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Fernandez M.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Perpinya X.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Roig-Guitart J.,wer Technology Center | Vellvehi M.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | And 3 more authors.
IEEE Transactions on Industrial Electronics | Year: 2017

This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN and GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs). As a result, cascodes present the worst SC ruggedness. By contrast, p-GaN gate HEMTs and MISHEMTs provide a higher SC capability thanks to their strong drain current reduction. In addition, a valuable state-of-the-art about all commercially available technologies is also provided, which demonstrates that current GaN devices do not allow SC capability. IEEE


Gonzalez-Fernandez A.A.,National Institute of Astrophysics, Optics and Electronics | Gonzalez-Fernandez A.A.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Juvert J.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Juvert J.,Ghent University | And 2 more authors.
AIP Advances | Year: 2017

We present an analysis of the relation between atomic and luminescent characteristics of a variety of Si-enriched Silicon Oxide films obtained by different techniques and various Si contents. Detailed studies of the Si 2p core level energy region and its components were carried out, as well as of Photoluminescence and its components. The results from such studies were correlated and analyzed. A combination of Quantum Confinement phenomena and the presence of radiative defects was identified as the cause for the light emission. A relation between the wavelength of the Photoluminescence due to Quantum Confinement, and the percentage of elemental Si bonds in the material was observed regardless of the fabrication technique; wile the wavelength of the emission caused by defects did not change except under very specific fabrication conditions. The results and conclusions allowed to establish a comparison parameter based on the material characteristics that can be used for all samples regardless of the fabrication method. © 2017 Author(s).


Cadarso V.J.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Cadarso V.J.,Ecole Polytechnique Federale de Lausanne | Llobera A.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Villanueva G.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | And 3 more authors.
Sensors and Actuators, A: Physical | Year: 2010

A system of two solid microlenses with uncoupled optical properties is presented. This structure has been designed in order to have one lens as a reference, while the other one can be mechanically tuneable. The reference lens presents a diameter of 2 μm and it is placed in the optical axis of the mechanically tuneable lens, which has a diameter of 10 μm. The proposed microoptical structure has been fabricated in poly(dimethilsiloxane) (PDMS) merging deep reactive ion etching, SU-8 and soft lithography, with a low-cost (mass-production), simple and highly repetitive technology. This device was numerically simulated prior to its fabrication, to optimize its design and improve its behaviour. In addition, an optical characterization of the fabricated devices was carried out. Both simulation and experimental results shows a good agreement, under mechanical actuation behaviour of the reference lens is invariable, while the tuneable lens become an elliptic lens and the interval of Sturm can be observed. These results provide a proof of concept of the proposed devices and validate both the design and the fabrication technology. © 2010 Elsevier B.V. All rights reserved.


Tosolini G.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Villanueva L.G.,California Institute of Technology | Perez-Murano F.,Institute Microelectrnica Of Barcelona Imb Cnm Csic | Bausells J.,Institute Microelectrnica Of Barcelona Imb Cnm Csic
IEEE International Conference on Microelectronic Test Structures | Year: 2012

In this work we present the development of a new set-up that allows on-wafer sensitivity characterization of piezoresistive cantilevers. In this way we reduce considerably the testing time compared to the techniques available up to date but at the same time we maintain a high measurement precision. Moreover it can be easily used for characterization of broad types of batch fabricated micro- and nanoelectromechanical systems (MEMS and NEMS). Together with the sensitivity measurement we present also the methods to test the cantilever spring constant and the electrical noise. Using these techniques we measured the performance of multiple piezoresistive cantilevers in two wafers and from these values we extracted important fabrication materials parameters such as Young modulus, Hooge and piezoresistive factors. © 2012 IEEE.

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