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University of Technology of Compiègne, France

Kolhatkar G.,Materiaux et TelecommunicationsUniversite du Quebec1650 Boulevard Lionel Boulet1rennes | Boucherif A.,Institute Interdisciplinaire dInnovation Tec | Ataellah Bioud Y.,Institute Interdisciplinaire dInnovation Tec | Fafard S.,Institute Interdisciplinaire dInnovation Tec | And 3 more authors.
Physica Status Solidi (B) Basic Research | Year: 2016

We correlate the structural properties of aluminium-based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N-C and N-H-VGa complexes. After annealing, a mobility of 60cm2V-1s-1 for a hole concentration of 1×1019cm-3 are measured, which is similar to the values reported on GaAs with the same carrier concentration. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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