Materials Institute for Surface Technologies and Photonics

Weiz, Austria

Materials Institute for Surface Technologies and Photonics

Weiz, Austria
SEARCH FILTERS
Time filter
Source Type

Petritz A.,Materials Institute for Surface Technologies and Photonics | Wolfberger A.,University of Leoben | Fian A.,Materials Institute for Surface Technologies and Photonics | Krenn J.R.,Universitatsplatz 5 | And 2 more authors.
Organic Electronics: physics, materials, applications | Year: 2013

A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25-48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol-gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm2 V-1 s-1 at an operation voltage as low as -4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec-1 as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits. © 2013 The Authors. Published by Elsevier B.V. All rights reserved.


PubMed | Universitatsplatz 5, University of Leoben and Materials Institute for Surface Technologies and Photonics
Type: Journal Article | Journal: Organic electronics | Year: 2014

A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25-48nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly(()endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (

Loading Materials Institute for Surface Technologies and Photonics collaborators
Loading Materials Institute for Surface Technologies and Photonics collaborators