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Sennikov P.G.,RAS Institute of Chemistry of High Purity Substances | Vodopyanov A.V.,RAS Institute of Applied Physics | Golubev S.V.,RAS Institute of Applied Physics | Mansfeld D.A.,RAS Institute of Applied Physics | And 15 more authors.
Solid State Communications | Year: 2012

A new approach for producing high-purity silicon with isotopic enrichment of 28Si isotope is reported. The methods of centrifugal enrichment were modified to obtain the initial gaseous silicon tetrafluoride with a record-breaking enrichment of 0.99999664(11) with respect to 28Si. The effective conversion of silicon tetrafluoride into elementary silicon with minimal isotopic dilution was achieved in an electron cyclotron resonance discharge plasma, sustained by gyrotron microwave radiation with a frequency of 24 GHz. We have experimentally demonstrated the deposition of the layers of microcrystalline 28Si with enrichment of 0.999986 ± 0.000003, which is the best result at the present time. © 2011 Elsevier Ltd. All rights reserved.

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