Institute For Mikroelektronik Ims Chips

Stuttgart, Germany

Institute For Mikroelektronik Ims Chips

Stuttgart, Germany

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Ante F.,Max Planck Institute for Solid State Research | Kalblein D.,Max Planck Institute for Solid State Research | Zaki T.,Institute For Mikroelektronik Ims Chips | Zschieschang U.,Max Planck Institute for Solid State Research | And 8 more authors.
Small | Year: 2012

Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10 7; intrinsic mobility: 3 cm 2 (V s) -1) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Zschieschang U.,Max Planck Institute for Solid State Research | Hofmockel R.,Max Planck Institute for Solid State Research | Rodel R.,Max Planck Institute for Solid State Research | Kraft U.,Max Planck Institute for Solid State Research | And 8 more authors.
Organic Electronics: physics, materials, applications | Year: 2013

Bottom-gate, top-contact (inverted staggered) organic thin-film transistors with a channel length of 1 μm have been fabricated on flexible plastic substrates using the vacuum-deposited small-molecule semiconductor 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT). The transistors have an effective field-effect mobility of 1.2 cm2/V s, an on/off ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 ns per stage at a supply voltage of 3 V. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. © 2013 Elsevier B.V. All rights reserved.


Etter D.B.,Institute For Mikroelektronik Ims Chips | Sun S.,Institute For Mikroelektronik Ims Chips | Hutter F.X.,Institute For Mikroelektronik Ims Chips | Burghartz J.N.,Robert Bosch GmbH | And 2 more authors.
2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013 | Year: 2013

A fabrication process for a thermo-diode microbolometer array is presented. The process is based on a sintered porous silicon (sPS) technique adopted from Chipfilm™ technology to enable vertical thermal insulation of the pixels. In addition, the process offers the possibility to have more than one diode per pixel connected in series. It is demonstrated that this boosts the temperature sensitivity of the device. © 2013 IEEE.


Ante F.,Max Planck Institute for Solid State Research | Letzkus F.,Institute For Mikroelektronik Ims Chips | Butschke J.,Institute For Mikroelektronik Ims Chips | Zschieschang U.,Max Planck Institute for Solid State Research | And 4 more authors.
Technical Digest - International Electron Devices Meeting, IEDM | Year: 2010

Using high-resolution silicon stencil masks and employing a resist-free, solvent-free, low-temperature (90 °C) fabrication process we have fabricated low-voltage top-contact organic thin-film transistors (TFTs) with a channel length down to 0.8 μm. To observe the scaling requirements and to alleviate short-channel effects, a thin gate dielectric with a thickness of 5.3 nm is employed. The p-channel TFTs have a record static performance, with a transconductance of 1 S/m, an on/off current ratio of 108, and a subthreshold swing of 100 mV/dec. Unipolar inverters based on p-channel TFTs with a channel length of 1 μm and gate-to-source and gate-to-drain overlaps of 2 μm respond to input signals with frequencies up to 1 MHz. Combining air-stable p-channel and n-channel TFTs we have also realized organic complementary ring oscillators with record low-voltage dynamic performance (signal delay of 30 μ s per stage at a supply voltage of 3 V). ©2010 IEEE.


Zschieschang U.,Max Planck Institute for Solid State Research | Rodel R.,Max Planck Institute for Solid State Research | Kraft U.,Max Planck Institute for Solid State Research | Takimiya K.,RIKEN | And 8 more authors.
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting | Year: 2014

A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm2/Vs, an on/off ratio of 107, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17 μs per stage have been obtained. © 2014 IEEE.

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