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Stuttgart Mühlhausen, Germany

Gartner P.,Budapest University of Technology and Economics | Richter H.,Institute for Microelectronics Stuttgart
BEC 2010 - 2010 12th Biennial Baltic Electronics Conference, Proceedings of the 12th Biennial Baltic Electronics Conference | Year: 2010

The paper presents a new solution to achieve rail-to-rail common mode input voltage swing for CMOS operational amplifiers. The common mode input range of a MOS differential stage is limited by the threshold voltage of the input transistors. With a pair of complementary input stages the whole range from GND to VDD can be covered. Their drain currents are summed up but the resulting current as well as the DC voltage of the summing node drastically change when one of the input stages turns off near the power rails. The new method applies a built-in feedback loop with an auxiliary opamp for stabilizing the voltage at the summing node. This way a very stable operating point and ideal CMRR can be assured. With selected transistor aspect ratios nearly constant voltage gain can be achieved for the whole common mode input voltage range. ©2010 IEEE. Source

Yordanov H.,Technical University of Sofia | Angelopoulos E.,Institute for Microelectronics Stuttgart
European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference | Year: 2013

On-chip integrated antennas show promising results for emergent applications like wireless chip-to-chip communications, wireless sensors, telemetry, etc. The radiation efficiency of such antennas is restrained by the high dielectric losses at microwave frequencies in the silicone substrate. Two ways to increase integrated antenna efficiency are to use either high-impedance or very thin silicon substrate. This paper presents the prototyping of antennas on ultra-thin substrate and compares the results with high-impedance based prototypes, presented in earlier publications. © 2013 European Microwave Association. Source

Fohn T.,University of Stuttgart | Hoppe N.,University of Stuttgart | Vogel W.,University of Stuttgart | Schmidt M.,University of Stuttgart | And 4 more authors.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | Year: 2014

Spectral properties of silicon subwavelength grating waveguides are simulated in 3D with eigenmode expansion and the impact of the number of included modes is investigated. Simulation results are validated against measurements. © 2014 IEEE. Source

Koeck A.,AIT Austrian Institute of Technology | Bruck R.,AIT Austrian Institute of Technology | Wellenzohn M.,AIT Austrian Institute of Technology | Hainberger R.,AIT Austrian Institute of Technology | And 11 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2010

The authors have successfully employed the charged particle nanopatterning (CHARPAN) technology for nanostructuring of a metal mold insert for a conventional injection molding machine. High-precision diamond-milled Ni-Cu mold inserts have been nanopatterned with 10 keV argon ion multibeam milling with feature sizes as small as 50 nm. A variety of structures such as circles, hexagons, and lines in different dimensions, with positive and negative shapes, have been fabricated in the metal mold. These structures have been successfully replicated in polymethylpentene samples by injection molding. To the authors' best knowledge, the CHARPAN technology is one of the very few technologies that allow for resistless nanostructuring a field size of 25×25 μ m 2 into a metal mold in a single shot. This is of high importance for the practical injection molding fabrication of nanostructured polymer devices such as optical biosensors. © 2010 American Vacuum Society. Source

Zhang Y.,Institute for Microelectronics Stuttgart | Burghartz J.N.,Institute for Microelectronics Stuttgart
IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition | Year: 2011

A novel, high-voltage (HV) to low-voltage (LV) linear level-shifting cell using only one DMOS Transistor and two resistors is presented. Its infinite input resistance, wide receiving range and linear HV-to-LV level-shifting characteristics make it very suitable to build CMOS/DMOS mixed-voltage receiver circuits for industrial applications. Based on the new cell, a compact, wide receiving range, differential input HV-to-LV digital receiver and a circuit arrangement for HV-to-LV analog signal transmission with optimized output swing are designed. Functionalities of the designed receivers are verified by extensive simulations and experimental measurements. © 2011 IEEE. Source

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