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Stein H.,Institute For Materialsruhr University Bochumuniversitatsstr 15044780Bochumgermany | Naujoks D.,Institute For Materialsruhr University Bochumuniversitatsstr 15044780Bochumgermany | Grochla D.,Institute For Materialsruhr University Bochumuniversitatsstr 15044780Bochumgermany | Khare C.,Institute For Materialsruhr University Bochumuniversitatsstr 15044780Bochumgermany | And 4 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

In thin film deposition processes, the deposition temperature is one of the crucial process parameters for obtaining films with desired properties. Usually the optimum deposition temperature is found by conducting several depositions sequentially in a time consuming process. This paper demonstrates a facile and rapid route of the simultaneous thin film deposition at six different deposition temperatures ranging from 100 to 1000°C. Cuprite (Cu2O) was chosen for the study as this material is of interest for energy applications. The thin films are assessed for their crystallographic, microstructural, Raman scattering, and photoelectrochemical properties. The results show that the utilization of a step heater leads to the rapid optimization of thin film microstructures of an absorber material used in photoelectrochemistry. This results in a structure zone diagram for Cu2O. For a substrate temperature of 600°C, an optimum between crystallinity and morphology occurs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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