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Bad Münster am Stein-Ebernburg, Germany

Pundt A.,Institute For Materialphysik
Ceramic Transactions | Year: 2013

For hydrogen storage applications, nano-scale metal-hydrogen systems are suggested to reduce loading and unloading times. But, nano-scaling the system does also change other physical properties. Many changes can be related to micro-structure and mechanical stress, but also to new structures only evolving in the nanometer-range. This paper shortly summarizes changes of metal-hydrogen systems turned to nano-scale and discusses the findings with regard to storage applications. Source

Mazumder B.,CNRS Material Physics Group | Vella A.,CNRS Material Physics Group | Deconihout B.,CNRS Material Physics Group | Al-Kassab T.,Institute For Materialphysik | Al-Kassab T.,King Abdullah University of Science and Technology
Ultramicroscopy | Year: 2011

In this paper the field evaporation properties of bulk MgO and sandwiched MgO layers in Fe are compared using laser assisted Atom Probe Tomography. The comparison of flight time spectra gives an estimate of the evaporation times as a function of the wavelength and the laser energy. It is shown that the evaporation takes place in two steps on two different time scales in MgO. It is also shown that as long as the MgO layer is buried in Fe, the evaporation is dominated by the photon absorption in Fe layer at the tip apex. Eventually the evaporation process of MgO is discussed based on the difference between the bulk materials and the multilayer samples. © 2010 Elsevier B.V. Source

Gusak A.M.,Cherkasy National University | Schmitz G.,Institute For Materialphysik | Tyutyunnyk N.,Cherkasy National University
Defect and Diffusion Forum | Year: 2012

The problem of phase competition during reactive diffusion is revisited. Nucleation of an intermediate phase at an interface under external fluxes in the neighboring phases is considered in the frame of kinetic Fokker-Planck approach. Effective nucleation barrier depending on the divergence of external fluxes is introduced. New suppression/growth criteria are obtained. © (2012) Trans Tech Publications. Source

Mazumder B.,CNRS Material Physics Group | Vella A.,CNRS Material Physics Group | Gilbert M.,IMEC | Deconihout B.,CNRS Material Physics Group | Schmitz G.,Institute For Materialphysik
New Journal of Physics | Year: 2010

In this work, the lifetime of silicon (Si) ions generated through photoionization of Si surface atoms from a field emitter was measured. Under low-intensity fs laser pulse illumination, a linear dependence of the number of evaporated ions per pulse on the laser intensity was observed. A simple model was developed to explain this linear dependence and to estimate the rate of success of the field evaporation process. It is shown that the number of evaporated ions per pulse depends on the standing field applied to the Si surface, demonstrating the existence of an ionic energy barrier for Si ions. The lifetime of these ions was estimated to be 0.5 ps. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Source

Ji D.,University of Munster | Donner A.D.,Institute For Materialphysik | Wilde G.,Institute For Materialphysik | Hu W.,CAS Beijing National Laboratory for Molecular | Fuchs H.,University of Munster
RSC Advances | Year: 2015

The development of high-integration, flexible and transferable devices is a very important premise to realize authentically wearable applications in the future. Here, we report how to fabricate flexible, free-standing and high-resolution (down to 5 μm) top-contact OFETs based on a polystyrene (PS) dielectric layer. In this process, we use a special sacrificial layer, poly(sodium-4-styrene sulfonate) (PSSNa). It is low-cost, dissolves quickly in water at room temperature and has good compatibility with most organic material processing techniques. With the help of this sacrificial layer, this kind of free-standing transistors can be successfully transferred onto arbitrary substrates. Furthermore, the degradation of the performance of the devices after multiple and successive transfer is tolerated. © The Royal Society of Chemistry 2015. Source

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