Institute dElectronique

Villeneuve-la-Rivière, France

Institute dElectronique

Villeneuve-la-Rivière, France
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Sanchez-Martin H.,University of Salamanca | Sanchez-Martin S.,University of Salamanca | Garcia-Perez O.,University of Salamanca | Perez S.,University of Salamanca | And 4 more authors.
2017 Spanish Conference on Electron Devices, CDE 2017 | Year: 2017

Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a very large impedance mismatch. A comprehensive analytical study, which uses as input data just the measured DC current-voltage curve of the diodes, is able to replicate the values of the RF characterization and allows a deep understanding of the detection mechanism. © 2017 IEEE.

Sanchez-Martin H.,University of Salamanca | Garcia-Perez O.,University of Salamanca | Iniguez-De-La-Torre I.,University of Salamanca | Perez S.,University of Salamanca | And 3 more authors.
2017 Spanish Conference on Electron Devices, CDE 2017 | Year: 2017

Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail. © 2017 IEEE.

Li M.,French National Center for Scientific Research | Li M.,Institute dElectronique | Seok S.,French National Center for Scientific Research | Rolland N.,French National Center for Scientific Research | Rolland P.-A.,French National Center for Scientific Research
AEU - International Journal of Electronics and Communications | Year: 2011

This paper presents the design and the realization of a 2.1 GHz low phase noise oscillator through a combination of BAW resonator and negative differential resistance (NDR) circuit using STMicroelectronics 0.25 m BiCMOS Technology. A new procedure which is based on the Kurokawa criterion and implemented within microwave CADs has been used to design the oscillator. A good agreement between the simulations and measurements has been achieved. The best measured phase noise was -130 dBc/Hz at 100 KHz offset from the carrier frequency of 2.1 GHz. The measured device exhibits an output power close to -4.5 dBm, with an overall power consumption of 23.8 mW. © 2010 Elsevier GmbH. All rights reserved.

Iskander R.,University Pierre and Marie Curie | Louerat M.-M.,University Pierre and Marie Curie | Kaiser A.,Institute dElectronique
Integration, the VLSI Journal | Year: 2013

A hierarchical sizing and biasing methodology for analog firm intellectual properties (IPs) is presented. An analog firm IP designates an unsized transistor netlist of an analog circuit. The methodology sizes and biases an analog firm IP by automatically generating suitable sizing procedures. The generated procedures respect topology constraints, designer's hypotheses and design constraints. The procedures are represented using dependency graphs. The methodology deals with different aspects of analog design problems such as MOS inversion level control, insufficient or excess design parameters, systematic offset and negative-feedback. Its application in both fields of analog synthesis and simulation is outlined. The proposed methodology has been successfully used to size, bias and analyze two analog IPs: a single-ended two-stage operational amplifier and a fully differential transconductor. This is performed using 130 nm CMOS technology with VDD=1.2V. The results prove the effectiveness and precision of the proposed methodology. © 2012 Elsevier B.V.

Sworowski M.,NXP Semiconductors | Neuilly F.,NXP Semiconductors | Legrand B.,Institute DElectronique | Summanwar A.,NXP Semiconductors | And 2 more authors.
IEEE Electron Device Letters | Year: 2010

A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the integration of passive components on silicon and exhibit a good compromise between the quality factor higher than 50000 and the motional resistance of a few kiloohms. © 2006 IEEE.

Supiot P.,Institute dElectronique | Vivien C.,Institute dElectronique | Blary K.,Institute dElectronique | Rouessac V.,Montpellier University
Chemical Vapor Deposition | Year: 2011

Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2μm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45μm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processes. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Roelkens G.,Photonics Research Group Center for Nano and Biophotonics Photonics | Dave U.,Photonics Research Group Center for Nano and Biophotonics Photonics | Gassenq A.,Photonics Research Group Center for Nano and Biophotonics Photonics | Hattasan N.,Photonics Research Group Center for Nano and Biophotonics Photonics | And 28 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2014

In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the telecommunication wavelength range and the mid-infrared. © 1995-2012 IEEE.

Swinteck N.,University of Arizona | Robillard J.-F.,University of Arizona | Bringuier S.,University of Arizona | Bucay J.,University of Arizona | And 4 more authors.
Applied Physics Letters | Year: 2011

We report on a phononic crystal (PC) consisting of a square array of cylindrical polyvinylchloride inclusions in air that can be used to control the relative phase of two incident acoustic waves with different incident angles. The phase shift between waves propagating through the crystal depends on the angle of incidence of the incoming waves and the PC length. The behavior of the PC is analyzed using the finite-difference-time-domain method. The band structure and equifrequency contours calculated via the plane wave expansion method show that the distinctive phase controlling properties are attributed to noncollinear wave and group velocity vectors in the PC as well as the degree of refraction. © 2011 American Institute of Physics.

PubMed | Institute Delectronique
Type: Journal Article | Journal: IEEE transactions on ultrasonics, ferroelectrics, and frequency control | Year: 2011

A two-dimensional phononic crystal (PC) made of a square lattice of air holes in an aluminum matrix is studied. The band structure calculated in the irreducible Brillouin zone of the PC exhibits a branch with a negative slope that allows negative refraction. This phenomenon has been numerically verified using a prism-shaped PC for plane waves entering the PC with two different incidences. A detailed study of the waves at the exit of the PC shows that the plane wave is reconstructed after several wavelengths. Finally, the description of the refracted waves is interpreted using a point source array, giving information about the angular spreading and the relative amplitude of each refracted beam.

Goh W.H.,Georgia Institute of Technology | Patriarche G.,CNRS Optic of Semiconductor nanoStructures Group | Bonanno P.L.,Georgia Institute of Technology | Gautier S.,University Of Metz Et Suplec | And 10 more authors.
Journal of Crystal Growth | Year: 2011

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of threading dislocations. The growth of AlGaN/GaN layers is uniform and shows sharp interfaces between the AlGaN and GaN epilayers. AlGaN nanodots/nanowires, which are formed at the apexes of the nano-pyramids/nano-ridges, are found to be homogeneous in size and to have a higher aluminum mole fraction than the surrounding material. In contrast, the InGaN/GaN growth shows no quantum dots at the apexes of the nanostructures. We found that the growth facets of different Miller's indices are formed on the InGaN/GaN nano-ridges. Energy dispersive X-ray spectroscopy (EDX) shows higher indium incorporation at the intersection of the growth facets. Cathodoluminescence measurements show enhanced luminescence intensity from InGaN multi-quantum wells (MQWs) grown on the nanostructure compared to that from InGaN MQWs grown on an unpatterned area. © 2010 Elsevier B.V.

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