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Villeneuve-la-Rivière, France

Lesecq M.,Institute dElectron | Hoel V.,Institute dElectron | Des Etangs-Levallois A.L.,Institute dElectron | Pichonat E.,Institute dElectron | And 2 more authors.
IEEE Electron Device Letters | Year: 2011

In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (LG =2)mum on a flexible tape are presented. Under 0.16% strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands VDS = 18V. © 2010 IEEE.

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