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Meng L.,Solar Energy Research Institute of Singapore | Rao S.S.P.,IBM | Bhatia C.S.,Solar Energy Research Institute of Singapore | Steen S.E.,IBM | And 3 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2012

Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects. © 2012 IEEE. Source


Meng L.,National University of Singapore | Nagalingam D.,National University of Singapore | Bhatia C.S.,National University of Singapore | Street A.G.,Qualcomm | And 3 more authors.
Solar Energy Materials and Solar Cells | Year: 2011

Morphological and electrical defects in polycrystalline silicon solar cells are distinguished by scanning electron acoustic microscopy (SEAM) and electron beam induced current (EBIC) techniques, respectively. It was found that while some defects are both morphologically and electrically detectable, some are predominantly only either electrical or morphological in nature. Combining both SEAM and EBIC is therefore an ideal approach as the two techniques can provide complementary information on both the morphological and electrical manifestation of the defects. © 2011 Elsevier B.V. Source


Meng L.,National University of Singapore | Papa Rao S.S.,IBM | Bhatia C.S.,National University of Singapore | Steen S.E.,IBM | And 3 more authors.
IEEE Journal of Photovoltaics | Year: 2013

Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects. © 2011-2012 IEEE. Source


Meng L.,National University of Singapore | Meng L.,Solar Energy Research Institute of Singapore | Steen S.,IBM | Koo C.K.,National University of Singapore | And 7 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2011

Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction. © 2011 IEEE. Source


Zhang L.,Institute of Microelectronics, Singapore | Chai T.C.,Institute of Microelectronics, Singapore | Wai L.C.,Institute of Microelectronics, Singapore | Lam T.W.,Inscope Labs Pte Ltd. | And 2 more authors.
Proceedings of the Electronic Packaging Technology Conference, EPTC | Year: 2016

Recent years many technical papers had discussed a lot on copper wire boned devices reliability by conducting various reliability tests [1, 2]. The most common failure analysis methods used are cross section, SEM and FIB to study the IMC growth and acid decapsulation to remove the mold compound to inspect die surface [1]. Usually wire pull and ball shear test were used to evaluate the wire and ball bond quality [3]. All above mentioned ways are destructive to the IC chips. This is quite risky when the samples quantity is not much and after reliability test only a few samples fail and then resulting in destroy the failed samples while couldn't find the exact failure location. In this paper, through case study four types of advanced FA techniques were demonstrated and very minimum damage to the chips were proved, i.e. 3D X-ray, Magnetic current imaging, IR-Obirch (Infrared Optical beam induced resistance change) and Decapsulation using laser + MIP (Microwave Induced Plasma) etching. The first three FA techniques are absolutely not destructive to the chips, the decapsulation using laser + MIP plasma etching is a safe way to remove the mold compound of the IC package while preserve all bonded wires, bond pads and die surface. © 2015 IEEE. Source

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