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Varennes, Canada

Soltani M.,INRS Nergie | Chaker M.,INRS Nergie | Margot J.,University of Montreal
Science and Technology of Advanced Materials | Year: 2011

Negative capacitance (NC) in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz-10 MHz. The capacitance changed from positive to negative values as the W-doped VO 2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance-voltage hysteresis was observed as the applied voltage was cycled from -35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems. © 2011 National Institute for Materials Science. Source


Lazar S.,McMaster University | Shao Y.,McMaster University | Gunawan L.,McMaster University | Nechache R.,INRS Nergie | And 2 more authors.
Microscopy and Microanalysis | Year: 2010

High-angle annular dark-field and annular bright-field imaging experiments were carried out on an aberration-corrected transmission electron microscope. These techniques have been demonstrated on thin films of complex oxides Ba 3.25La0.75Ti3O12 and on LaB 6. The results show good agreement between theory and experiments, and for the case of LaB6 they demonstrate the detection of contrast from the B atoms in the annular bright-field images. Elemental mapping with electron-energy-loss spectroscopy has been used to deduce the distribution of Cr and Fe in a thin film of the complex oxide Bi2(Fe 1/2Cr3/2)O6 at the unit cell level and the changes in the near-edge structure within the inequivalent regions in the crystalline unit cell. Energy-filtered images in the low-loss region of the energy-loss spectrum show contrast and resolution consistent with the modulation of the signals from elastic scattering. High-resolution contrast, mediated by phonon scattering, is observed for interband transitions. The limitations in terms of detection and signal are discussed. © 2010 Microscopy Society of America. Source


Peccianti M.,INRS Nergie | Peccianti M.,CNR Institute for Chemical and Physical Processes | Pasquazi A.,INRS Nergie | Assanto G.,Third University of Rome | Morandotti R.,INRS Nergie
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 | Year: 2011

We demonstrate type I third harmonic generation enhanced by the tight localization of fs laser light in nonlocal spatial solitons excited in nematic liquid crystals. © 2011 OSA. Source


Peccianti M.,INRS Nergie | Peccianti M.,CNR Institute for Chemical and Physical Processes | Ho S.P.,INRS Nergie | Ho S.P.,University of Technology Malaysia | And 7 more authors.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 | Year: 2011

We present our investigation on the THz space-time emission characteristic induced by the non-paraxial generation regime in highly localized THz generation via optical rectification on sub-wavelength areas. © 2011 OSA. Source

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