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Taoyuan, Taiwan

Inotera Memories | Date: 2014-05-30

A semiconductor structure includes a substrate having thereon a conductive region, at least one cylinder-shaped container on the conductive region, and a supporting structure having at least two stripe shaped portions arranged in parallel to each other and at least one retaining ring between the two stripe shaped portions. The retaining ring retains and structurally supports the cylinder-shaped container electrode.

Inotera Memories | Date: 2014-03-28

The instant disclosure relates to a method for manufacturing high-strength structural stacked capacitor. The novel feature of the instant disclosure is forming a part of upper electrode layer to cover the first/outer surface of each of the lower electrode layers before removing the sacrificial layer, and forming another part of upper electrode layer to cover the second/inner surface of each of the lower electrode layers after removing the sacrificial layer. Hence, the structure strength of the lower electrode layer in all process steps has been improved.

Inotera Memories | Date: 2014-05-29

A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a through substrate via (TSV) structure protruding from a surface of the substrate on the second side; a block layer conformally covering the surface of the substrate and the TSV structure; a first dielectric layer covering the block layer except for a portion of the block layer that is directly on the TSV structure; a second dielectric layer on the first dielectric layer; and a damascened circuit pattern in the second dielectric layer. The second dielectric layer is in direct contact with the first dielectric layer. The damascened circuit pattern is in direct contact with the TSV structure.

Inotera Memories | Date: 2015-05-04

A non-floating vertical transistor includes a substrate and a protuberant structure extending from the substrate. A segregating pillar is inside the protuberant structure. A pair of segregated bit-lines which are segregated by the segregating pillar is disposed in the substrate and in the protuberant structure and adjacent to the bottom of the segregating pillar. A gate oxide layer is attached to the sidewall of the protuberant structure. A word-line is adjacent to the gate oxide layer so that the gate oxide layer is sandwiched between the word-line and a doped deposition layer.

A PMOS field effect transistor includes a substrate, a first nitride layer, a mesa structure, two gate oxide films, a gate stack layer and a second nitride layer. The substrate has a oxide layer and a first doping area. The first nitride layer is located on the oxide layer. The mesa structure includes a first strained SiGe layer, an epitaxial Si layer and a second strained SiGe layer. The first strained SiGe layer is located on the oxide layer and the first nitride layer. The epitaxial Si layer is located on the first strained SiGe layer. The second strained SiGe layer is located on the epitaxial Si layer. In the surface layer of the second strained SiGe layer, there is a second doping area. The two gate oxide films are located at two sides of the mesa structure.

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