Time filter

Source Type

Fan J.R.,University of Science and Technology of China | Fan J.R.,Innovation Center for MicroNanoelectronics and Integrated System | Wu W.G.,University of Science and Technology of China | Wu W.G.,Innovation Center for MicroNanoelectronics and Integrated System | And 5 more authors.
Nanoscale | Year: 2017

As plasmonic antennas for surface-plasmon-assisted control of optical fields at specific frequencies, metallic nanostructures have recently emerged as crucial optical components for fascinating plasmonic color engineering. Particularly, plasmonic resonant nanocavities can concentrate lightwave energy to strongly enhance light-matter interactions, making them ideal candidates as optical elements for fine-tuning color displays. Inspired by the color mixing effect found on butterfly wings, a new type of plasmonic, multiresonant, narrow-band (the minimum is about 45 nm), high-reflectance (the maximum is about 95%), and dynamic color-tuning reflector is developed. This is achieved from periodic patterns of plasmonic resonant nanocavities in free-standing capped-pillar nanostructure arrays. Such cavity-coupling structures exhibit multiple narrow-band selective and continuously tunable reflections via plasmon standing-wave resonances. Consequently, they can produce a variety of dark-field vibrant reflective colors with good quality, strong color signal and fine tonal variation at the optical diffraction limit. This proposed multicolor scheme provides an elegant strategy for realizing personalized and customized applications in ultracompact photonic data storage and steganography, colorimetric sensing, 3D holograms and other plasmon-assisted photonic devices. © 2017 The Royal Society of Chemistry.


Zhang Y.,China Institute of Technology | Li Z.,China Institute of Technology | Xu K.,China Institute of Technology | Gao C.,China Institute of Technology | And 4 more authors.
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) | Year: 2017

This paper reports a novel electrochemical accelerometer for applications of wearable systems and smart skins. An original flexible accelerometer based on graphene electrodes and a PDMS microchannel on polyimide flexible print circuit (FPC) has been achieved by low-cost fabrication process. Instead of expensive platinum electrodes, a graphene layer was transferred to FPC to function as chemical inertness sensitive electrodes. To simplify process steps and reduce fabrication cost, the microchannel on FPC was obtained without lithography process by using screen printing PDMS lines. In shock exciter experiment, the accelerometer was tested under 20g shock acceleration, providing 39.5mv/g (0.40μA/g) sensitivity. This microchannel electrochemical device can not only be used for acceleration sensing, but also provide more possibilities in flexible multi-sensor system, for example pressure, temperature and tactile sensing applications. © 2017 IEEE.


Mao Y.,CAS Institute of Microelectronics | Chen Z.,CAS Institute of Microelectronics | Zhu J.,CAS Institute of Microelectronics | Pan Y.,CAS Institute of Microelectronics | And 3 more authors.
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) | Year: 2017

We present a novel stereo metamaterial composed of three-dimensional (3D) gold split ring resonators (SRRs) in array to realize considerable optical modulation. The metamaterial is fabricated by a general 3D nanofabrication technique of focused ion beam stress induced deformation (FIB-SID). Such technique is a simple-step process, allowing programmable and accurate nanoscale origami on various metal and dielectric thin films. Theoretical and experimental results manifest that the metamaterial device with the 3D SRRs as meta-atoms has reflection minimum and abrupt phase change at 5.3 μm. In addition, to demonstrate the power of FIB-SID, other 3D meta-atoms with complex geometry such as sine shape, fold-line, and swiss-roll are also produced, proving FIB-SID an ideal tool to construct various 3D optical nanostructures and devices, including plamonic antennas, metamaterials and metasurfaces. © 2017 IEEE.


Zhao P.,Tsinghua National Laboratory for Information Sciences and Technology | Deng N.,Tsinghua National Laboratory for Information Sciences and Technology | Deng N.,Innovation Center for MicroNanoelectronics and Integrated System | Li X.,Capital Medical University | And 3 more authors.
Sensors and Actuators, A: Physical | Year: 2014

This paper reports the development of a highly-sensitive and ultra-thin silicon stress sensor chip (UTSC) and its applications for wearable sensors. Stress sensor chips are fabricated using CMOS technology, and after dicing the individual chips are reconfigured into a virtual wafer on a carrier wafer using temporary adhesive bonding. The reconfigured wafer is then thinned using mechanical grinding, polishing, and wet etching. After thinning, the sensor chips with thickness of 35 μm are laminated to a thin Kapton PI film, followed by de-bonding to separate the carrier wafer. Measurement results show that the UTSC is able to comply with curved surfaces, and the sensitivity is around 70 times that of metal strain gauge. The specifications of the UTSC are characterized in terms of linearity, repeatability, hysteresis, and zero drift. The UTSCs are demonstrated to measure human pulses on wrist and orthodontic forces of invisible aligners for dental treatment. The preliminary results show that the reconfigured method is applicable to thinning individual chips, and the UTSCs are flexible and sensitive enough for measurement of stress and strain on curved surfaces on human bodies. © 2014 Elsevier B.V.


Bu F.,Tsinghua University | Ma Q.,Tsinghua University | Wang Z.,Tsinghua University | Wang Z.,Tsinghua National Laboratory for Information Sciences and Technology | Wang Z.,Innovation Center for MicroNanoelectronics and Integrated System
Microelectronics Reliability | Year: 2016

BCB is emerging as an attractive bonding adhesive for wafer bonding in 3-D integration. Although the bonding strength of BCB is satisfactory with the assist of adhesion promoter, it is found that BCB suffers from interface delamination in harsh chemical or thermal conditions. This paper proposes, at chemical bond level, that the mechanism of interface delamination in KOH solution is attributed to the decomposition of Si[sbnd]O[sbnd]Si bonds at the interface between substrates and AP3000 adhesion promoter as a result of hydrolysis. Silicon dioxide and silicon nitride films with various densities of Si[sbnd]H and Si[sbnd]N bonds are prepared, and the bond densities are measured using infrared spectroscopy. The corresponding interface delamination rates of these films and BCB in KOH solution are measured, and the relations between the bond densities and the delamination rates are obtained for silicon dioxide and silicon nitride. It shows that the delamination rates decrease with the increase in the densities of Si[sbnd]O[sbnd]Si. These results demonstrate that the decomposition of Si[sbnd]O[sbnd]Si in KOH is the main reason for BCB delamination, and increase in the density of Si[sbnd]O[sbnd]Si improves the bonding strength. © 2016 Elsevier Ltd


Wu W.,CAS Institute of Microelectronics | Wu W.,Innovation Center for MicroNanoelectronics and Integrated System | Mao H.,CAS Institute of Microelectronics | Han X.,CAS Institute of Microelectronics | And 2 more authors.
Nanotechnology | Year: 2016

This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications. © 2016 IOP Publishing Ltd.


Chang P.,Peking University | Liu X.,Peking University | Liu X.,Innovation Center for MicroNanoelectronics and Integrated System | Du G.,Peking University | Zhang X.,Peking University
Technical Digest - International Electron Devices Meeting, IEDM | Year: 2015

This work presents a systematic assessment of hole mobility in InSb, GaSb and InGaSb based ultra-thin body (UTB) double-gate pMOSFETs employing a self-consistent method based on 8×8 k · p Schrödinger and Poisson equations and including important scattering mechanisms. Physical models are calibrated against experiments. The effect of body thickness, surface/channel orientation, biaxial and uniaxial strain, and heterostructure design on hole mobility in III-V materials has been systematically investigated in order to help in providing useful guidelines. © 2014 IEEE.


Huang C.,Tsinghua National Laboratory for Information Sciences and Technology | Liu R.,Fudan University | Wang Z.,Tsinghua National Laboratory for Information Sciences and Technology | Wang Z.,Innovation Center for MicroNanoelectronics and Integrated System
IEEE Transactions on Device and Materials Reliability | Year: 2014

Through-silicon vias (TSVs) with air gaps as the isolators have been developed to reduce the TSV capacitance and to solve the reliability problems associated with thermomechanical stresses. This paper reports the reliability assessment of the air-gap TSVs by measuring the C-V, I-V, and resistance of the TSVs in terms of thermal and electrical stresses with a focus on thermal shock, temperature variations, and voltage ramps. Thermal shock tests are performed to evaluate the insulation capability and the thermomechanical stability of the air gaps. Temperature variations are implemented to investigate the influences of high temperatures on the electrical characteristics of the air-gap TSVs. Voltage ramp tests are carried out, and the time-dependent dielectric breakdown is obtained to evaluate the integrity of the air gaps and the intrinsic barrier capability. The preliminary results show that the air-gap TSVs have good thermal stability, excellent dielectric property, and satisfactory structure and barrier stability. © 2014 IEEE.


Deng N.,Tsinghua University | Deng N.,Innovation Center for MicroNanoelectronics and Integrated System | Pang H.,Tsinghua University | Pang H.,Innovation Center for MicroNanoelectronics and Integrated System | And 2 more authors.
Chinese Physics B | Year: 2014

In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance. © 2014 Chinese Physical Society and IOP Publishing Ltd.


Pang H.,Tsinghua University | Pang H.,Innovation Center for MicroNanoelectronics and Integrated System | Deng N.,Tsinghua University | Deng N.,Innovation Center for MicroNanoelectronics and Integrated System
Chinese Physics Letters | Year: 2014

The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V. © 2014 Chinese Physical Society and IOP Publishing Ltd.

Loading Innovation Center for MicroNanoelectronics and Integrated System collaborators
Loading Innovation Center for MicroNanoelectronics and Integrated System collaborators