Dortmund, Germany
Dortmund, Germany

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Agency: European Commission | Branch: FP7 | Program: BSG-SME | Phase: SME-2012-1 | Award Amount: 1.11M | Year: 2013

The QUATERNIAN project will use quantum-dot laser technology to expand the product ranges and support the competitive position of European SMEs selling into optical access network markets. Access networks based on optical technologies are rapidly growing, as traditional copper based networking proves overly complex, energy inefficient and has high maintenance cost. With the advent of high-speed mobile computing devices, broadband connectivity is required both through fixed connections at the premises and through wireless connections. The latter requirement is often not provided by carrier networks as deep building penetration is incompatible with wide area cell networks. The QUATERNIAN project will advance the position of SMEs supplying equipment both for rapidly growing high-speed wired optical access networks and high-speed radio-over-fibre (RoF) building access networks. Quantum Dot laser materials grown on Gallium Arsenide substrates give a generational advance in the control of the carrier density of states. This material advance has led to significant device technology advances in the critical wavelength range of 1.1 to 1.3 microns. This wavelength range is crucial both for low-cost wired passive optical networks and advanced multiple antenna systems. The research performing partners are leaders in the study and development of quantum dot devices and systems. Through the QUATERNIAN proposal these research performing institutions will assist these high-growth SMEs in the adoption and further development of quantum dot technology. The QUATERNIAN project strengthens the competitiveness of the European economy, the sustainability of the European research area and maintains European technology leadership.

Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2007.3.5 | Award Amount: 13.65M | Year: 2008

FAST-DOT aims to implement a new range of ultrafast quantum-dot lasers for critical bio-medical applications. This project will develop portable, low-cost, reliable, highly efficient ultrashort pulse and ultra-broadband tuneable laser sources. The key technical innovation quantum dots (QDs) - are based on novel semiconductor nanostructure clusters which demonstrate remarkable new photonic properties. QD structures will afford major advances in ultrafast science and technology by exploiting the unique combination of QD properties (high optical quality, efficient light generation, ultrafast carrier dynamics and broadband gain bandwidth) at wavelength range which not easily accessible with current technologies. The FAST-DOT consortium brings together a unique and compelling group of world-leaders in the physics of QDs and QD photonic devices, system integrators and biophotonic. This research will realise a full understanding of the underlying ultrafast properties and physics of QD structures and exploit these effects in the construction of novel highly compact, reliable and environmentally-stable sources of ultra-short pulses. The new QD sources will be investigated and validated in a range of bio-photonic applications including OCT; Non-linear Microscopy; Nanosurgery and minimally invasive diagnostics. The availability of compact and inexpensive ultrashort pulse lasers will have widespread impact in uptake by making many applications more affordable and opening up new application areas. The project unites 18 complementary European research groups and companies with international reputations in the development of semiconductor materials and their use in efficient ultra-fast lasers, related applications and marketing. All of the groups have record of collaboration and a strong record in producing high quality results and joint publications. This programme will contribute to further extending Europes world-leading position of in photonics and ultrafast technology.

Agency: European Commission | Branch: H2020 | Program: MSCA-ITN-ETN | Phase: MSCA-ITN-2016 | Award Amount: 4.00M | Year: 2017

Nanowires (NWs) exhibit unique properties that make them potential building blocks for a variety of next generation NanoElectronics devices. Recent advances have shown that NWs with predefined properties can be grown, offering a new paradigm enabling functional device prototypes including: biosensors, solar cells, transistors, quantum light sources and lasers. The critical mass of scientific knowledge gained now needs to be translated into NW technologies for industry. FP7-MC NanoEmbrace (ITN) and FUNPROB (IRSES), made substantial contributions to NW research, producing excellent scientific and technological results (>100 journal papers published) and delivered outstanding training in nanoscience and transferable skills to ESRs. Despite demonstrable scientific and technological advantages of NWs, NW-based technology concepts have not yet been translated into market-ready products, because industry and academia have not worked hand-in-hand to commercialize the research findings. Thus, it is essential that NW research is now directed towards customer-oriented scientific R&D; whilst applying innovative industrial design techniques to ensure rapid translation of the basic technologies into commercial devices. This ambitious challenge requires close collaboration between academia and the nascent NW industry, combining the efforts of scientists and engineers to address market needs. Building upon our previous achievements, a team of leading scientific experts from top institutions in Europe, strengthened by experts in innovative design and industrial partners with an excellent track record of converting cutting edge scientific ideas into market products has formed the INDEED network to address this challenge. To enhance employability, INDEED will train young ESRs to become experts with a unique skill set that includes interdisciplinary scientific techniques, industrial experience through R&D secondments and innovative design skills.

Hoffmann M.C.,University of Hamburg | Monozon B.S.,Saint Petersburg State University | Livshits D.,Innolume Gmbh | Rafailov E.U.,University of Dundee | Turchinovich D.,Technical University of Denmark
Applied Physics Letters | Year: 2010

We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. © 2010 American Institute of Physics.

Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-29-2016 | Award Amount: 3.69M | Year: 2016

The rising life expectancy of EU citizens is creating a dramatic increase in age-related degenerative diseases and associated healthcare costs. The MOON Project (Multi-modal Optical Diagnostics for Ocular and Neurodegenerative Disease) meets this societal challenge by applying photonics to diagnose age-related diseases of the eye and central nervous system. Consistent with the ICT-29-2016: Photonics KET 2016 Work Program, MOON will design and build a multi-band, multimodal and functional imaging platform combining label-free molecularly sensitive Raman spectroscopy with high speed and high-resolution Optical Coherence Tomography (OCT), for in-depth diagnostics of ocular and neurodegenerative diseases. MOON will enhance OCT already the gold standard of retinal imaging - through the development of a disruptive laser technology that enables wide-field structural and functional imaging. MOON will establish a reference database for molecular biomarkers of addressed diseases that enables, for the first time, in-depth molecular-specific diagnosis of retinal diseases and neurodegenerative pathologies based on Raman spectroscopy. The MOON system will be validated in vivo in a clinical setting through close collaboration between clinicians and commercial partners. The clinical validation will establish the diagnostic accuracy of the multi-modal platform, while also verifying the ease-of-use needed for widespread adoption. MOON is driven by unmet medical user needs in diagnostic imaging with a clear business case addressing the highly promising ophthalmic market of early and in-depth molecularly sensitive diagnostics of retinal and neurodegenerative diseases. The three industrial partners cover the complete value/supply chain. MOON aims to bridge the gap between research and product development, thereby expediting the commercialization of the MOON technologies, strengthening the participating companies, and creating a competitive advantage for the European photonics market.

Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2013.3.2 | Award Amount: 5.03M | Year: 2013

Silicon photonics is a powerful way to combine the assets of integrated photonics and CMOS technologies. The SEQUOIA project intends to make significant new advances in silicon photonic integrated circuits by heterogeneously integrating novel III-V materials, namely quantum dot and quantum dash-based materials on silicon wafers, through wafer bonding. Thanks to the superior properties of those innovative materials, hybrid III-V lasers with better thermal stability, higher modulation bandwidth and the possibility of generating a flat wavelength-division-multiplexing comb will be demonstrated. Moreover, the hybrid integration of nano-structured materials on Si allows to exploit the advantages provided by silicon. In particular, optical filters can be directly integrated with hybrid quantum dot/quantum dash/Si lasers to create chirp-managed lasers, which have an enhanced modulation bandwidth and extinction ratio compared to directly modulated lasers. As an illustration of the technology developed in SEQUOIA, transmitters with a total capacity of 400 Gbit/s (16x25 Gbit/s) will be designed, fabricated and characterized. The hybrid integration of nano-structured III-V materials in silicon through a wafer bonding technique is generic, and the concepts and technology developed inside the SEQUOIA project can be further extended to other types of transmitters, for example with extended link range, higher bit rate, higher WDM channel number and other types of modulation formats. In addition, a broad range of applications, such as sensing, health-care, safety and security, can benefit from the technology developed in SEQUOIA.The SEQUOIA consortium is highly complementary, covering all skills required to achieve the project objectives, from the growth of the nano-structured materials to the assessment of high bit rate digital communication systems, and has the potential to set up a comprehensive supply chain for the future exploitation.

Rautiainen J.,Tampere University of Technology | Krestnikov I.,Innolume Gmbh | Nikkinen J.,Tampere University of Technology | Okhotnikov O.G.,Tampere University of Technology
Optics Letters | Year: 2010

We report a disk laser using two quantum-dot semiconductor gain elements, resulting in what we believe is the first demonstration of intracavity frequency conversion with these active media. Output power of 6 W has been obtained in dual-gain configuration at a wavelength of 1180 nm, while single-gain lasers produced up to 3 and 4 W individually, limited by thermal rollover in the output characteristics. The gain enhancement achieved with two active elements comprising 39 layers of Stranski-Krastanov InGaAs quantum dots allows for intracavity frequency doubling delivering 2:5 W of orange radiation. © 2010 Optical Society of America.

Fedorova K.A.,University of Dundee | Cataluna M.A.,University of Dundee | Krestnikov I.,Innolume Gmbh | Livshits D.,Innolume Gmbh | Rafailov E.U.,University of Dundee
Optics Express | Year: 2010

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. © 2010 Optical Society of America.

Waveguide designs and fabrication methods provide adiabatic waveguide eigen mode conversion and can be applied to monolithic vertical integration of active and passive elements in PICs. An advantage of the designs and methods is a simple fabrication procedure with only a single etching step in combination with subsequent well-controllable selective oxidation. As a result, improved manufacturability and reliability can be achieved.

A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.

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