Hohhot, China

Inner Mongolia University of Science and Technology is a university in Inner Mongolia, China under the authority of the Inner Mongolia government and the education department of Chinese Education. Wikipedia.

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Guo J.,CAS Institute of Botany | Guo J.,Inner Mongolia University of Science and Technology | Xu W.,CAS Institute of Botany | Ma M.,CAS Institute of Botany
Journal of Hazardous Materials | Year: 2012

Transgenic Arabidopsis thaliana were developed to increase tolerance for and accumulation of heavy metals and metalloids by simultaneous overexpression of AsPCS1 and YCF1 (derived from garlic and baker's yeast) based on the fact that chelation of metals and vacuolar compartmentalization are the main strategies for heavy metals/metalloids detoxification and tolerance in plants. Dual-gene transgenic lines had the longest roots and the highest accumulation of Cd and As than single-gene transgenic lines and wildtype. When grown on cadmium or arsenic (arsenite/arsenate), Dual-gene transgenic lines accumulated over 2-10 folds cadmium/arsenite and 2-3 folds arsenate than wild type or plants expressing AsPCS1 or YCF1 alone. Such stacking modified genes involved in chelation of toxic metals and vacuolar compartmentalization represents a highly promising new tool for use in phytoremediation efforts. © 2011 Elsevier B.V.

Zhao Y.,Inner Mongolia University of Science and Technology | Hao X.,Inner Mongolia University of Science and Technology | Li M.,Inner Mongolia University of Technology
Journal of Alloys and Compounds | Year: 2014

Lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) thick films were successfully fabricated on LaNiO3/Si (1 0 0) substrates by using a polyvinylpyrrolidone (PVP)-modified sol-gel technique. The dielectric properties, energy-storage performance and leakage current characteristics were investigated in detail. At 100 kHz, the capacitance density of the NBT thick films was 295 nF/cm2. The maximum recoverable energy-storage density and efficiency of the sample were 12.4 J/cm3 and 43% at 1200 kV/cm, respectively. A low leakage current density of about 1 × 10-5 A/cm2 was also obtained at 700 kV/cm at room temperature. These results indicated that the lead-free ferroelectric NBT thick films might be the promising candidates for high energy-storage capacitors application. © 2014 Elsevier B.V. All rights reserved.

Hao X.,Tongji University | Hao X.,Inner Mongolia University of Science and Technology | Zhai J.,Tongji University | Kong L.B.,Nanyang Technological University | Xu Z.,City University of Hong Kong
Progress in Materials Science | Year: 2014

Lead zirconate (PbZrO3 or PZ)-based antiferroelectric (AFE) materials, as a group of important electronic materials, have attracted increasing attention for their potential applications in high energy storage capacitors, micro-actuators, pyroelectric security sensors, cooling devices, and pulsed power generators and so on, because of their novel external electric field-induced phase switching behavior between AFE state and ferroelectric (FE) state. The performances of AFE materials are strongly dependent on the phase transformation process, which are mainly determined by the constitutions and the external field. For AFE thin/thick films, the electrical properties are also strongly dependent on their thickness, crystal orientation and the characteristics of electrode materials. Accordingly, various strategies have been employed to tailor the phase transformation behavior of AFE materials in order to improve their performances. Due to their relatively poor electrical strength (low breakdown fields), most PZ-based orthorhombic AFE ceramics are broken down before a critical switching field can be applied. As a consequence, the electric-field-induced transition between AFE and FE phase of only those AFE bulk ceramics, with compositions within tetragonal region near the AFE/FE morphotropic phase boundary (MPB), can be realized experimentally at room temperature. AFE materials with such compositions include (Pb,A)ZrO3 (A = Ba, Sr), (Pb1-3/2xLa x)(Zr1-yTiy)O 3 (PLZT x/(1-y)/y), (Pb0.97La0.02)(Zr,Sn,Ti) O3 (PLZST) and Pb0.99(Zr,Sn,Ti)0.98Nb 0.02O3 (PNZST). As compared to bulk ceramics, AFE thin and thick films always display better electric-field endurance ability. Consequently, room temperature electric-field-induced AFE-FE phase transition could be observed in the AFE thin/thick films with orthorhombic structures. Moreover, AFE films are more easily integrated with silicon technologies. Therefore, AFE thin/thick films have been a subject of numerous researches. This review serves to summarize the recent progress of PZ-based AFE materials, focusing on the external field (electric field, hydrostatic pressure and temperature) dependences of the AFE-FE phase transition, with a specific attention to the performances of AFE films for various potential applications, such as high energy storage, electric field induced strains, pyroelectric effect and electrocaloric effect. © 2014 Elsevier Ltd. All rights reserved.

Zhang L.,Inner Mongolia University of Science and Technology | Hao X.,Inner Mongolia University of Science and Technology
Journal of Alloys and Compounds | Year: 2014

In this work, (1 - x)(Na0.5Bi0.5)TiO 3-xSrTiO3 (abbreviated as NBT-xST, x = 0%, 20%, 26%, 30%, 36%) thick films with 3 wt% 3Bi2O3-2Li2O glass addition were successfully fabricated via a screen printing method. The dielectric properties and energy-storage performances were studied systematically. It was found that the dielectric constant of NBT-xST films decreased with ST content increasing and that the films exhibited relaxor behavior. The highest recoverable energy density of 2.7 J/cm3 under 600 kV/cm was achieved in the sample with 30 mol% ST content, which also displayed good energy-storage stability in the temperature range from room temperature to 200 C. Simultaneously, the leakage current was greatly reduced due to the addition of ST. © 2013 Elsevier B.V. All rights reserved.

Hao X.,Inner Mongolia University of Science and Technology | Zhai J.,Tongji University
Applied Physics Letters | Year: 2014

In this letter, orthorhombic Pb(Nb,Zr,Sn,Ti)O3 (PNZST) and tetragonal (Pb,La)(Zr,Sn,Ti)O3 (PLZST) antiferroelectric (AFE) thin films were deposited on LaNiO3/Pt(111)/TiO2/SiO 2/Si(100) substrates via a sol-gel method. The electrocaloric effect (ECE) of PNZST and PLZST films originated from phase transition between AFE and ferroelectric were studied, based on their pyroelectric results. A large tunable ECE near room temperature was realized in these films under the function of electric field. As the applied electric field increased, the temperature corresponding to the peak of ECE was decreased for the orthorhombic PNZST films, while the temperature was increased for the tetragonal PLZST films. The maximum ECE of 0.040 K · cm/kV in PNZST films and 0.048 K · cm/kV in PLZST films was received at 323 and 305 K, respectively. The results indicated that AFE thin films had the potential for application in tunable cooling devices near room temperature. © 2014 AIP Publishing LLC.

Hao X.,Inner Mongolia University of Science and Technology | Wang Y.,Inner Mongolia University of Science and Technology | Zhang L.,Inner Mongolia University of Science and Technology | An S.,Inner Mongolia University of Science and Technology
Applied Physics Letters | Year: 2013

1.8 -μm-(Pb0.97La0.02)(Zr0.95-xSn xTi0.05)O3 antiferroelectric thick films with orthorhombic (x 0.05 and 0.25) and tetragonal (x 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm3 was obtained in antiferroelectric thick films with x 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 °C. © 2013 AIP Publishing LLC.

Zhang Y.,Inner Mongolia University of Science and Technology
Mathematical and Computer Modelling | Year: 2011

This paper studies the modelling and identification problems for multi-input single-output (MISO) systems with colored noises. In order to obtain the unbiased recursive estimates of the systems, this paper presents a recursive least squares (RLS) identification algorithm based on bias compensation technique. The basic idea is to eliminate the estimation bias by adding a correction term in the least squares (LS) estimates, a set of stable digital prefilters are suitably designed to preprocess the input sampled data from multi-input channels for the purpose of getting the bias term arisen by colored noises in LS estimates, and further to derive a bias compensation based RLS algorithm. The performance of the developed method is both analyzed theoretically and shown by means of simulation results. © 2011.

du Z.-Q.,Inner Mongolia University of Science and Technology
Fish and Shellfish Immunology | Year: 2016

Apoptosis plays an important role in various biological processes and acts as a host defending mechanism by which infected cells are eliminated to restrict the virus propagation scale. Bax is a crucial pro-apoptotic protein, which mediates the release of cytochrome c from mitochondrion to cytosol in mammalian. However, its role in invertebrate is still obscure. Here, a novel pro-apoptotic protein gene was identified from hemocytes of red swamp crayfish. There was a Bcl-2 domain in the C-terminus of Pc-Bax, which possessed 497 amino acids residues. And an important transmembrane region existed in the C-terminus of Pc-Bax, which implied that Pc-Bax located in mitochondrial membrane. Besides, Pc-Bax was expressed at a relative high level in hemocytes, and a relative low expression levels in hepatopancreas, gills, and intestine. In hemocytes, Pc-Bax transcript was rapidly up-regulated from 12 h to 36 h after WSSV infection. And there was the same trend for Pc-Bax protein expression level in hemocytes after WSSV infection. Results of qRT-PCR testing for VP28 gene showed WSSV replication was obviously enhanced after Pc-Bax knockdown. Meantime, hemocytes apoptosis was suppressed in Pc-Bax knockdown crayfish after WSSV injection, compared with the dsGFP injection group and normal group. Taken together, these results revealed that crayfish hemocytes apoptosis scale was enhanced to suppress WSSV replication by up-regulating Bax protein expression level after WSSV infection. © 2016 Elsevier Ltd.

Chu K.-H.W.,Inner Mongolia University of Science and Technology
Physica B: Condensed Matter | Year: 2010

We investigate electric-field-driven transport of electrons in metallic as well as amorphous high-temperature superconductors by using the verified transition-rate approach which has been successfully adopted to study the critical transport of glassy solid helium in very low temperature environment. The critical temperatures related to the nearly frictionless transport of electrons were found to be directly relevant to the (onset) phase-transition temperature of high-temperature superconductors (like MgB 2 and Hg1-xPbxBa2Ca2Cu3O8δ [Hg(x Pb) 1:2:2:3]) after selecting specific activation energies and activation volumes. © 2010 Elsevier B.V. All rights reserved.

Zhao Y.-H.,Sichuan Normal University | Li Y.-F.,Inner Mongolia University of Science and Technology | Liu Y.,Yanshan University
Applied Physics Letters | Year: 2012

We investigated the p-electron ferromagnetism in alkaline earth doped AlAs by using first-principles calculations. The modified Becke and Johnson potential is used to give a much more reasonable semiconductor gap. Our results demonstrate that ferromagnetic phase is always energetically favorable than the antiferromagnetic and nonmagnetic ones for all considered compounds. Magnetic moments are mainly attributed to the partly filled anionic p states. Especially, half-metallic ferromagnetism has been obtained for Ca- and Sr-doped AlAs, which may be promising for spintronic applications. The calculated results are also useful for understanding of the origin of ferromagnetism in diluted magnetic semiconductors. © 2012 American Institute of Physics.

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