Information and Quantum Systems Laboratory

Palo Alto, CA, United States

Information and Quantum Systems Laboratory

Palo Alto, CA, United States
SEARCH FILTERS
Time filter
Source Type

Yi W.,Information and Quantum Systems Laboratory | Perner F.,Information and Quantum Systems Laboratory | Qureshi M.S.,Information and Quantum Systems Laboratory | Abdalla H.,Information and Quantum Systems Laboratory | And 5 more authors.
Applied Physics A: Materials Science and Processing | Year: 2011

In nanoscale memristive switching devices, the statistical distribution of resistance values and other relevant parameters for device operation often exhibits a lognormal distribution, causing large fluctuations of memristive analog state variables after each switching event, which may be problematic for digital nonvolatile memory applications. The state variable w in such devices has been proposed to be the length of an undoped semiconductor region along the thickness of the thin film that acts as a tunnel barrier for electronic transport across it. The dynamical behavior of w is governed by the drift diffusion of ionized dopants such as oxygen vacancies. Making an analogy to scanning tunneling microscopes (STM), a closed-loop write scheme using current feedback is proposed to switch the memristive devices in a controlled manner. An integrated closed-loop current driver circuit for switching a bipolar memristive device is designed and simulated. The estimated upper limit of the feedback loop bandwidth is in the order of 100 MHz.We applied a SPICE model built upon the TiO2 memristive switching dynamics to simulate the single-device write operation and found the closed-loop write scheme caused a narrowing of the statistical distribution of the state variable w. © The Author(s) 2011.

Loading Information and Quantum Systems Laboratory collaborators
Loading Information and Quantum Systems Laboratory collaborators