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Neubiberg, Germany

Infineon Technologies AG is a German semiconductor manufacturer founded on 1 April 1999, when the semiconductor operations of the parent company Siemens AG were spun off to form a separate legal entity. As of 30 September 2013, Infineon has 26,725 employees worldwide. In fiscal year 2013, the company achieved sales of €3.843 billion.On 1 May 2006, Infineon's Memory Products division was carved out as a distinct company called Qimonda AG, which at its height employed about 13,500 people worldwide. Qimonda was listed on the New York Stock Exchange until 2009. Wikipedia.


Patent
Infineon Technologies | Date: 2015-01-14

A method for manufacturing a chip arrangement in accordance with various embodiments may include: placing a chip on a carrier within an opening of a metal structure disposed over the carrier; fixing the chip to the metal structure; removing the carrier to thereby expose at least one contact of the chip; and forming an electrically conductive connection between the at least one contact of the chip and the metal structure.


Patent
Infineon Technologies | Date: 2015-01-05

Disclosed is a uk based current source, a control circuit for a uk based current source, and a method for providing a current.


Patent
Infineon Technologies | Date: 2015-01-13

An electronic switch is connected in series with a load dependent on an input signal. The electronic switch is operated in a first operation mode for a first time period after a signal level of the input signal has changed from an off-level to an on-level. The first operation mode includes driving the electronic switch dependent on a voltage across the load and dependent on a temperature of the electronic switch. The electronic switch is operated in a second operation mode after the first time period. The second operation mode includes driving the electronic switch dependent on the temperature according to a hysteresis curve.


Patent
Infineon Technologies | Date: 2015-01-29

A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the body zones. The semiconductor device further includes a dielectric layer adjoining the first surface and polysilicon plugs extending through openings in the dielectric layer and electrically connected to the source and the body zones. The polysilicon plugs have silicide crystallites in portions distant to the semiconductor die.


Patent
Infineon Technologies | Date: 2016-01-08

Programmable devices, methods of manufacture thereof, and methods of programming devices are disclosed. In one embodiment, a programmable device includes a link and at least one first contact coupled to a first end of the link. The at least one first contact is adjacent a portion of a top surface of the link and at least one sidewall of the link. The programmable device includes at least one second contact coupled to a second end of the link. The at least one second contact is adjacent a portion of the top surface of the link and at least one sidewall of the link.

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