Neubiberg, Germany
Neubiberg, Germany

Infineon Technologies AG is a German semiconductor manufacturer founded on 1 April 1999, when the semiconductor operations of the parent company Siemens AG were spun off to form a separate legal entity. As of 30 September 2013, Infineon has 26,725 employees worldwide. In fiscal year 2013, the company achieved sales of €3.843 billion.On 1 May 2006, Infineon's Memory Products division was carved out as a distinct company called Qimonda AG, which at its height employed about 13,500 people worldwide. Qimonda was listed on the New York Stock Exchange until 2009. Wikipedia.


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Patent
Infineon Technologies | Date: 2017-03-01

A sensor device (10) comprises an implantable sensor unit (100), a transponder unit (200), and a wired connection (300) flexibly and electrically connecting the implantable sensor unit (100) and the transponder unit (200). The implantable sensor unit (100) is adapted to be implanted into a body. The implantable sensor unit (100) comprises a comparator (120) and a sensor adapted to sense a characteristic of the body in vivo. The sensor is adapted to supply an analogue signal to a first input (120a) of the comparator (120). The transponder unit (200) is adapted to supply a control signal to the implantable sensor unit (100) and to receive an output signal of the comparator (120). The implantable sensor unit (100) is adapted to supply an analogue approximation signal to a second input (120b) of the comparator (120) in response to the control signal. The wired connection (300) is adapted to transmit the control signal and the output signal of the comparator (120).


Patent
Infineon Technologies | Date: 2017-01-31

In accordance with an embodiment, a receiver includes a receiving unit configured to receive a first received bus signal and a second received bus signal based on a bus input signal. The receiver also includes a first state machine configured to determine that a first output signal is a first symbol in response to the first received bus signal transitioning from a first bus state to a second bus state and staying in the second bus state for less than a first predetermined period of time, and a second symbol in response to the first received bus signal transitioning from the first bus state to the second bus state and staying in the second bus state for at least the first predetermined period of time. Additionally, the receiver includes a second state machine.


Patent
Infineon Technologies | Date: 2017-01-31

A cooling apparatus is manufactured by: receiving a discrete module by a first singular part, the discrete module including a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound, and a first cooling plate at least partly uncovered by the mold compound; attaching a second singular part to a periphery of the first part to form a housing, the housing surrounding a periphery of the discrete module, the second part having a cutout which exposes the first cooling plate and a sealing structure facing a side of the discrete module with the first cooling plate; and filling the sealing structure with a sealing material which forms a water-tight seal around the periphery of the discrete module at the side of the discrete module with the first cooling plate.


Patent
Infineon Technologies | Date: 2017-02-01

According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.


There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.


Patent
Infineon Technologies | Date: 2017-01-27

A semiconductor device includes a semiconductor body having opposite first and second surfaces, a drift or base zone in the semiconductor body and an oxygen diffusion barrier in the semiconductor body. The drift or base zone is located between the first surface and the oxygen diffusion barrier and directly adjoins the oxygen diffusion barrier. The semiconductor device further includes first and second load terminal contacts. At least one of the first and the second load terminal contacts is electrically connected to the semiconductor body through the first surface.


Patent
Infineon Technologies | Date: 2017-02-08

In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.


Patent
Infineon Technologies | Date: 2017-02-06

A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.


Patent
Infineon Technologies | Date: 2017-02-06

In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck.


A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.

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