Yang J.,INESC Microsistemas e Nanotecnologias and IN Institute for Nanosciences Microsistemas e Nanotecnologias |
MacEdo R.J.,INESC Microsistemas e Nanotecnologias and IN Institute for Nanosciences Microsistemas e Nanotecnologias |
MacEdo R.J.,University of Lisbon |
Debs M.G.,University of Porto |
And 7 more authors.
IEEE Transactions on Magnetics
This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm × 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the resistance-area (RA) product, and RA value as low as 0.8 Ωμm 2 could be successfully obtained for 0.75 nm thick MgO barriers. The average switching current density of 5.45 × 106 A/cm 2 can be obtained for a MTJ nanopillar with the dimension of 225 nm × 730.3 nm with low RA of 1.47 Ωμm2. © 2006 IEEE. Source