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The present invention relates to a novel compound or a pharmaceutically acceptable salt thereof inhibiting 11-HSD1 enzyme activity, a preparation method of the same, and a pharmaceutical composition comprising the same as an active ingredient. Since the compound of the present invention selectively inhibits the activity of 11-HSD1 (11-Hydroxysteroid dehydrogenase type 1), the compound of the invention can be effectively used as a therapeutic agent for the treatment of diseases caused by the over-activation of 11-HSD1 such as non-insulin dependent type II diabetes, insulin resistance, obesity, lipid disorder, metabolic syndrome, and other diseases or condition mediated by the excessive activity of glucocorticoid.


Provided is a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, and more particularly to a highly elastic physically cross-linked binder induced by reversible acid-base interaction for high performance silicon anode, in which the binder has excellent stiffness and elasticity. To this end, the polymer binder that is physically crosslinked with a crosslinking agent by acid-base interaction may include a crosslinking agent that is physically bound with the binder for silicon anode by reversible acid-base interaction with the binder for silicon anode.


A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.


Patent
Incheon National University | Date: 2014-07-03

The present invention relates to a photoelectric element and a method for manufacturing the same, and the photoelectric element according to the present invention includes: a semiconductor substrate; and transparent conductor pattern portions formed on a surface of the semiconductor substrate to be connected to each other with a specific cycle such that incident light is concentrated in a specific area of the semiconductor substrate.


Provided are method for healing defect of conductive layer, method for forming metal-carbon compound layer, 2D nano materials, and transparent electrode and method for manufacturing the same. According to an embodiment of present invention, the method for healing defect of conductive layer comprises: forming a conductive layer on a first metal substrate; contacting the first metal substrate with a salt solution containing a second metal in an ionic form, and forming a second metal particle at least in a portion of a conductive area, the second metal having greater reduction potential than a first metal.


Patent
Incheon National University | Date: 2016-05-11

A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer on the thermal oxide layer, depositing an oxide layer on the nickel thin layer, depositing a metallic layer on the oxide layer, and patterning the metallic layer to form a gate electrode, depositing a gate insulating layer on the gate electrode, changing a surface of the gate insulating layer into a hydrophilic surface, and washing and drying the gate insulting layer, coating a single-wall nanotube on the hydrophilic surface of the gate insulating layer, forming source and drain electrodes by forming a contact opening with respect to the gate insulating layer, attaching a thermal release tape after removing a surrounding single-wall nanotube, performing a transfer onto a polyvinyl alcohol thin layer after etching the nickel thin layer, and releasing the thermal release.


Patent
Yonsei University and Incheon National University | Date: 2015-01-15

The present invention relates to a semiconductor device and a method for manufacturing the same. Disclosed is a semiconductor device including a substrate, a conductive line on the substrate, and a seed layer between the substrate and the conductive line, the seed layer including cobalt titanium nitride.


Patent
Incheon National University | Date: 2016-04-20

Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer; (b) forming a PECVD layer on the nickel thin layer; (c) patterning the PECVD layer after setting a gate area and depositing a metallic layer; (d) lifting off the metallic layer to form a gage metallic thin layer and depositing a gage insulating layer on the gate metallic thin layer; (e) depositing an a-IGZO layer on the gate insulating layer; (f) etching an active area and the gate insulating layer; (g) forming a source electrode and a drain electrode and attaching a thermal release tape on the source electrode and the drain electrode; (h) delaminating the nickel thin layer; (i) performing transcription on a polyvinyl alcohol thin layer after etching the nickel thin layer; and (j) detaching the tape.


Patent
Yonsei University and Incheon National University | Date: 2015-07-31

The present disclosure relates to a method for forming a coating layer and a coating material having waterproof property, and the method for forming a coating layer according to the present disclosure includes (a) supplying a precursor comprising a rare earth metal onto a substrate; (b) purging impurities of remaining precursor after combination of the rare earth metal onto the substrate; (c) supplying an oxidant onto the substrate; and (d) purging remaining impurities after forming a coating layer including a rare earth oxide on the substrate. According to the method for forming a coating layer of the present disclosure, a coating layer with hydrophobic or superhydrophobic property may be formed by controlling a temperature of the substrate so that an atomic ratio of a carbon element in the coating layer is less than 1% to form the coating layer with hydrophobic or superhydrophobic property.


Patent
Yonsei University and Incheon National University | Date: 2015-07-31

The present disclosure relates to a superhydrophobic coating material and a method for manufacturing the superhydrophobic coating material. The superhydrophobic coating material according to the present disclosure includes a substrate provided with a three-dimensional nano structure; and a coating layer comprising a rare earth metal oxide formed on the three-dimensional nano structure. The method for manufacturing the superhydrophobic coating material according to the present disclosure includes preparing a substrate provided with a three-dimensional nano structure; and forming a coating layer comprising a rare earth metal oxide on the three-dimensional nano structure by supplying a precursor including a rare earth metal and an oxidant one by one onto the substrate, and the temperature of the substrate is controlled in the forming step so that an atomic ratio of a carbon element in the coating layer is less than 1% to form the coating layer with superhydrophobic property.

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