IMS Nanofabrication AG

Vienna, Austria

IMS Nanofabrication AG

Vienna, Austria

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Patent
IMS Nanofabrication AG | Date: 2015-01-21

A pattern definition (PD) device (500) for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices (512, 522) positioned in a stacked arrangement. A particle beam (lb) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by means of the two deflection array devices. Each deflection array device (512, 522) comprises a plurality of blanking openings (513, 523) allowing passage of beamlets, and a plurality of deflecting devices, each of said deflecting devices being associated with a respective blanking opening (513, 523) and comprising at least one electrostatic electrode (510, 511, 520, 521). The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. For each deflection array device (512, 522) the deflecting devices correspond to respective subsets (A, B) of the beamlets, such that each deflection array device is configured to act on only the beamlets belonging to the respective subset (A, B) by selectively deflecting them, while allowing the other beamlets (B, A) to traverse the respective deflection array device without deflection.


Patent
IMS Nanofabrication AG | Date: 2016-01-13

An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern (160) is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel (162) is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.


Patent
IMS Nanofabrication AG | Date: 2016-09-21

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region (102) to be written with a predetermined primary feature size and a secondary pattern region (103) which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region (102) are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region (103) are written by exposing a plurality of exposure spots on grid positions of a second exposure grid (164) according to a second arrangement which is coarser than the regular arrangement of the first exposure grid.


Patent
IMS Nanofabrication AG | Date: 2016-03-18

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two sweeps which each have a respective general direction, but the general direction is different for different sweeps, e.g. perpendicular to each other. Each stripe belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths, as measured across said main direction, of the stripes of one sweep combine into a cover of the total width of the region.


Patent
IMS Nanofabrication AG | Date: 2016-03-17

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.


Patent
IMS Nanofabrication AG | Date: 2016-05-11

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region of exposure, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes are written parallel to each other along a general direction, which is at a small angle to a principal pattern direction of structures to be written within the region of exposure.


Patent
IMS Nanofabrication AG | Date: 2015-10-28

In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns the beam shaping device of each column includes an aperture array device (203) provided with at least one array of apertures (231, 232). Each array of apertures comprises a multitude of apertures for defining the shape of a respective sub-beam which is then imaged onto the target. The apertures form the sub-beam into an oblong shape as seen along the direction of the beam, said oblong shape having a short (aX) and a long side (aY), with the long side being at least the double of the short side. The oblong shape thus defined by the apertures is oriented traversing a line grid direction of a line pattern of the target. The apertures (231, 232) of different aperture arrays may have different shapes and/or different orientations.


Patent
IMS Nanofabrication AG | Date: 2016-11-16

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region (R2) of exposure, and this movement defines a number of stripes (s21-s2n) covering said region (R2) in sequential exposures and having respective widths (y0). The number of stripes are written parallel to each other along a general direction (d2), which is at a small angle () to a principal pattern direction (dh) of structures (80) to be written within the region of exposure (R2).


Patent
IMS Nanofabrication AG | Date: 2016-11-23

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region (R2) to be exposed, and this movement defines a number of stripes (181-183, 187-189) covering said region (R2) in sequential exposures and having respective widths (y0, x0). The number of stripes is written in at least two sweeps which each have a respective general direction (d1, d2), but the general direction is different for different sweeps, for instance perpendicular to each other. Each stripe (181-183, 187-189) belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths (y0, x0), as measured across said main direction, of the stripes of one sweep combine into a cover of the total width (Ry, Rx) of the region.


Patent
IMS Nanofabrication AG | Date: 2016-03-09

Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target,said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam, wherein the method comprises:(i) subdividing the exposure area into a plurality of non-overlapping sub-regions,(ii) determining, for each of said subregions, a subregion dislocation, said subregion dislocation comprising a set of parameters describing the distortion of the target at the location of the respective subregion,(iii) providing the desired pattern as a graphical representation on the exposure area on the target, said graphical representation being composed of a plurality of graphical elements, each graphical element located at a respective position in the exposure area,(iv) modifying the graphical representation in accordance with the plurality of subregion dislocations, by dislocating each graphical element according to a subregion dislocation of the subregion which includes the respective position of the graphical element, obtaining a plurality of graphical elements thus dislocated, which compose a corrected graphical representation,(v) calculating, from the corrected graphical representation, an exposure pattern defined on the multitude of pixels, said exposure pattern being suitable to create a nominal dose distribution on the target realizing contour lines representing the desired pattern.

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