Entity

Time filter

Source Type


Schaekers M.,imecKapeldreef 753001 LeuvenBelgium | Liu J.,China Institute of Technology | Luo J.,China Institute of Technology | Zhao C.,China Institute of Technology | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

An overview is given on the status of n-type dopant activation and diffusion in Ge, based on a standard ion implantation and annealing scheme. Emphasis is on defect engineering approaches to optimize either or both parameters. A detailed discussion is given on the use of co-implantation by neutral or other n-type dopants. As a case study, the impact of the C ion implantation energy and dose on n-type junctions in p-Ge by P+C co-implantation will be given. It is demonstrated that for fixed P implant conditions, there exist an optimum energy and dose for achieving a minimum junction depth by the formation of C-PV complexes. An alternative approach is the use of self-interstitial management at the end-of-range of the P implantation. Finally, an overview is given of alternatives for obtaining shallow, highly activated n-type junctions in Ge. They rely on: non-standard implantation schemes, ultra-short annealing methods or relying on in situ doped epitaxial deposition. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Chen C.Y.,Catholic University of Leuven | Goux L.,imecKapeldreef 753001 LeuvenBelgium | Fantini A.,Catholic University of Leuven | Redolfi A.,imecKapeldreef 753001 LeuvenBelgium | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

In this paper, we introduce rare-earth hygroscopic oxide Gd2O3 as a novel switching material allowing extended reset operation as compared to standard state-of-the-art oxide like (Hf,Al)O2. We prepared 5nm-thick oxide layers, as integrated between TiN and Hf electrodes in 1-transistor/1-resistor configuration. Using industry-relevant programming current I≤10μA and pulse width ≤1μs, 40nm-size TiN\Gd2O3\Hf cells allowed reaching a median memory window (MW)>×70 while state-of-the-art materials exhibited MW<×10 in the same conditions. Based on the large MW, high write endurance properties (>106 cycles), and good retention of Gd2O3-based cells (>5 days at 85°C), verify algorithms allow reliable programming with low latency. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Tsigkourakos M.,Catholic University of Leuven | Hantschel T.,imecKapeldreef 753001 LeuvenBelgium | Xu Z.,Catholic University of Leuven | Douhard B.,imecKapeldreef 753001 LeuvenBelgium | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

The presence of O during the chemical vapour deposition (CVD) of B-doped diamond results in the suppression of B incorporation into the diamond film. In this study, we demonstrate that the amount of residual O within the chamber is higher at the beginning of the diamond growth due to the O-contaminated chamber walls, and is decreased after a certain time period. This leads to a gradual increase of the B incorporation by more than one order of magnitude during the early growth phases of nanocrystalline diamond (NCD). We further show that this suppression of B incorporation at the early growth phases of B-doped diamond is influenced by the growth rate of the film. This is attributed to the constant time period whereby most of the residual O interacts with the B-precursors in the gas phase by forming stable B-O species, which are flushed out from the chamber exhaust. Furthermore, the constant B profile of an NCD film grown in a loadlock hot-filament CVD (HFCVD) system reveals that the amount of residual O is constant and minimal during the growth process. Therefore, our work proves that the use of a loadlock overcomes the B-suppression problem at the early growth phases of diamond, making it the optimal solution for the growth of highly conductive thin diamond films. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

Discover hidden collaborations