ImecKapeldreef 753001 LeuvenBelgium

ImecKapeldreef 753001 LeuvenBelgium


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Tsigkourakos M.,Catholic University of Leuven | Hantschel T.,imecKapeldreef 753001 LeuvenBelgium | Xu Z.,Catholic University of Leuven | Douhard B.,imecKapeldreef 753001 LeuvenBelgium | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

The presence of O during the chemical vapour deposition (CVD) of B-doped diamond results in the suppression of B incorporation into the diamond film. In this study, we demonstrate that the amount of residual O within the chamber is higher at the beginning of the diamond growth due to the O-contaminated chamber walls, and is decreased after a certain time period. This leads to a gradual increase of the B incorporation by more than one order of magnitude during the early growth phases of nanocrystalline diamond (NCD). We further show that this suppression of B incorporation at the early growth phases of B-doped diamond is influenced by the growth rate of the film. This is attributed to the constant time period whereby most of the residual O interacts with the B-precursors in the gas phase by forming stable B-O species, which are flushed out from the chamber exhaust. Furthermore, the constant B profile of an NCD film grown in a loadlock hot-filament CVD (HFCVD) system reveals that the amount of residual O is constant and minimal during the growth process. Therefore, our work proves that the use of a loadlock overcomes the B-suppression problem at the early growth phases of diamond, making it the optimal solution for the growth of highly conductive thin diamond films. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Schaekers M.,ImecKapeldreef 753001 LeuvenBelgium | Liu J.,China Institute of Technology | Luo J.,China Institute of Technology | Zhao C.,China Institute of Technology | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

An overview is given on the status of n-type dopant activation and diffusion in Ge, based on a standard ion implantation and annealing scheme. Emphasis is on defect engineering approaches to optimize either or both parameters. A detailed discussion is given on the use of co-implantation by neutral or other n-type dopants. As a case study, the impact of the C ion implantation energy and dose on n-type junctions in p-Ge by P+C co-implantation will be given. It is demonstrated that for fixed P implant conditions, there exist an optimum energy and dose for achieving a minimum junction depth by the formation of C-PV complexes. An alternative approach is the use of self-interstitial management at the end-of-range of the P implantation. Finally, an overview is given of alternatives for obtaining shallow, highly activated n-type junctions in Ge. They rely on: non-standard implantation schemes, ultra-short annealing methods or relying on in situ doped epitaxial deposition. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Chen C.Y.,Catholic University of Leuven | Goux L.,imecKapeldreef 753001 LeuvenBelgium | Fantini A.,Catholic University of Leuven | Redolfi A.,imecKapeldreef 753001 LeuvenBelgium | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

In this paper, we introduce rare-earth hygroscopic oxide Gd2O3 as a novel switching material allowing extended reset operation as compared to standard state-of-the-art oxide like (Hf,Al)O2. We prepared 5nm-thick oxide layers, as integrated between TiN and Hf electrodes in 1-transistor/1-resistor configuration. Using industry-relevant programming current I≤10μA and pulse width ≤1μs, 40nm-size TiN\Gd2O3\Hf cells allowed reaching a median memory window (MW)>×70 while state-of-the-art materials exhibited MW<×10 in the same conditions. Based on the large MW, high write endurance properties (>106 cycles), and good retention of Gd2O3-based cells (>5 days at 85°C), verify algorithms allow reliable programming with low latency. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Claeys C.,Catholic University of Leuven | Arimura H.,ImecKapeldreef 753001 LeuvenBelgium | Collaert N.,ImecKapeldreef 753001 LeuvenBelgium | Mitard J.,ImecKapeldreef 753001 LeuvenBelgium | And 7 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

Advanced devices are not only driven by minimum device geometry, performance enhancement, and cost issues, but also require a low power consumption. Device scaling for higher performance and lower power consumption necessitates the introduction of advanced process modules, new materials new device architectures and, finally, even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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