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Barcelona, Spain

Devie A.,INSA Lyon | Tournier D.,INSA Lyon | Godignon P.,CNM IMB | Vellvehi M.,CNM IMB | And 2 more authors.
Materials Science Forum | Year: 2010

Abstract. Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed. © (2010) Trans Tech Publications. Source

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