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Marseille, France

Lacruche M.,Ecole Nationale Superieure des Mines de Saint - Etienne CMP | Beringuier-Boher N.,Ecole Nationale Superieure des Mines de Saint - Etienne CMP | Dutertre J.-M.,Ecole Nationale Superieure des Mines de Saint - Etienne CMP | Rigaud J.-B.,Ecole Nationale Superieure des Mines de Saint - Etienne CMP | Kussener E.,IM2NP
Proceedings of the 2016 Design, Automation and Test in Europe Conference and Exhibition, DATE 2016 | Year: 2016

This paper presents a study on the effect of Forward Body Biasing on the laser fault sensitivity of a CMOS 90nm microcontroller. Tests were performed on a register of this target, under several supply voltage and body bias settings, showing significant laser sensitivity variations. Based on these results, a method which aims at decreasing fault repeatability by using variable supply voltage and body bias settings is proposed. Finally, tests are performed on an implementation of this method on a temporally redundant AES and the results are presented. © 2016 EDAA. Source


Panciera F.,IM2NP
Applied Physics Letters | Year: 2010

We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics. Source


Schutz-Kuchly T.,French National Solar Energy Institute | Dubois S.,French National Solar Energy Institute | Veirman J.,French National Solar Energy Institute | Veschetti Y.,French National Solar Energy Institute | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2011

This study focuses on the evolution under illumination of the electrical performances of solar cells made with n-type boron-phosphorus compensated Czochralski silicon. First, we show via carrier lifetime measurements that this material is sensitive to light-induced degradation (LID) effects due to the formation of BO i2 complexes. Solar cells were then processed with this compensated material. The cells performances were found to be dependent on the position of the wafer along the ingot height. This dependence is due to carrier lifetime variations along the ingot height and is not directly linked with the differences in concentration between boron and phosphorus. LID experiments were then performed on the same cells. Unlike what was suggested from previous studies, we highlighted a weak decrease of the cell performances under illumination, consistent with the electrical characterizations at the wafer level. These degradations have been quantified and linked with the chemical composition of the material. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Drisko G.L.,CNRS Laboratory of Condensed Matter Chemistry, Paris | Drisko G.L.,CNRS Coordination Chemistry | Carretero-Genevrier A.,CNRS Laboratory of Condensed Matter Chemistry, Paris | Carretero-Genevrier A.,Lyon Institute of Nanotechnologies | And 8 more authors.
Chemical Communications | Year: 2015

Complex 3D macrostructured nanoparticles are transformed from amorphous silica into pure polycrystalline α-quartz using catalytic quantities of alkaline earth metals as devitrifying agent. Walls as thin as 10 nm could be crystallized without losing the architecture of the particles. The roles of cation size and the mol% of the incorporated devitrifying agent in crystallization behavior are studied, with Mg2+, Ca2+, Sr2+ and Ba2+ all producing pure α-quartz under certain conditions. © 2015 The Royal Society of Chemistry. Source


Zalden P.,RWTH Aachen | Aquilanti G.,Elettra - Sincrotrone Trieste | Prestipino C.,CNRS Chemistry Institute of Rennes | Mathon O.,European Synchrotron Radiation Facility | And 3 more authors.
Journal of Synchrotron Radiation | Year: 2012

A Calvet-type differential scanning calorimeter has been implemented on a synchrotron beamline devoted to X-ray absorption spectroscopy. As a case study, the complex crystallization process in amorphous Ge 15Sb 85 phase-change material is followed by simultaneous calorimetric and quick-EXAFS measurements. A first crystallization at 514(1) K is related to the crystallization of an Sb-rich phase accompanied by segregation of Ge atoms. Upon further heating, the as-formed amorphous Ge regions crystallize at 604(1) K. A quantitative analysis of the latent heat allows a Ge 11Sb 89 stoichiometry to be proposed for the first crystallized phase. © 2012 International Union of Crystallography Printed in Singapore - all rights reserved. Source

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