IM Flash Singapore LLP is a semiconductor company founded in February 2007, by Micron Technology and Intel Corporation. The joint-venture was set up to produce NAND Flash memory for the 2 owners, and was the second site set up, after the success of IM Flash Technologies. It was located in Senoko, Singapore.It was planned to begin operations in late 2008, but due to the global financial crisis that began that year, all 800 employees were retrenched. The plant, which had completed construction, was idled as the capital equipment had not moved into the plant.In 2010, preparations were made to start production by end of that year, as the IM Flash Technologies plant had reached maximum capacityIt officially opened in April 2011.On February 28, 2012, Micron and Intel announced that they would expand their NAND Flash memory joint venture relationship, to increase the flexibility and efficiency of the joint venture. Intel would sell its stake in IM Flash Singapore to Micron, along with its share of IM Flash Technologies assets in Micron's Manassas, Virginia plant.While the IMFS assets have been sold to Micron, there is an option in place for Micron to purchase Intel's interest in IMFT, per the disclosure in the company's 10Q SEC filing, 30 June 2012:"Micron Technology, Inc. and Intel formed IM Flash Technologies, LLC and IM Flash Singapore, LLP to manufacture NANDflash memory products for Micron and Intel. During the second quarter of 2012, we entered into agreements with Micron to modify our jointventure relationship. Under the agreements and as of June 30, 2012, we own a 49% interest in the remaining assets held by IMFT and no longerhold an ownership interest in IMFS. We received $605 million in the second quarter of 2012 from the sale of assets of IMFS and certain assetsof IMFT to Micron, which is reflected as a sale of assets within investing activities on the consolidated condensed statements of cash flows.The carrying value of our investment in IMFT was $587 million as of June 30, 2012 and is classified within other long-term assets.As part of the agreements to modify our joint venture relationship, we also entered into an amended operating agreement for IMFT, whichextends the term of IMFT to 2024, unless earlier terminated under certain terms and conditions, and provides that IMFT may manufacturecertain emerging memory technologies in addition to NAND flash memory. These agreements include a NAND Flash supply agreement forMicron to supply us NAND products. We provided approximately $365 million to Micron in the second quarter of 2012, which we expect willprimarily be applied to future product purchases under the supply agreement with Micron. A substantial majority of the $365 million isreflected as a cash flow used for operating activities. The agreements also extend Intel and Micron’s NAND joint development program andexpand it to include emerging memory technologies. Additionally, the amended agreement provides for certain rights that, beginning in 2015,provide us with the ability to sell to Micron, or Micron the ability to purchase from us, our interest in IMFT. If Intel exercises this right, Micronwould set the closing date of the transaction within two years following such election and could elect to receive financing from Intel for one totwo years.". As a result, IM Flash Singapore became wholly owned by Micron and became its fourth facility in Singapore. Wikipedia.
Mccrate J.M.,IM Flash
AIChE Journal | Year: 2015
Germanium nanoparticle growth on SiO2 proceeds via defect-mediated nucleation and particle density can be enhanced by chemically treating the SiO2 with SiHx. The influence of SiHx fragments on SiO2 surface sites is studied using a fluorescent probe-based technique to understand the chemical nature of the inherent defect trapping sites and the chemical nature of the additional trapping sites formed by SiHx. Oxygen-vacancy sites on SiO2 are the inherent sites for defect-mediated nucleation. SiHx fragments, generated by cracking disilane on a hot tungsten filament, are shown to react with strained siloxane sites, leading to a conversion of these strained siloxane sites into a different low density defect site that is shown to display reactive characteristics similar to the oxygen-vacancy defect sites. Previous work demonstrating an increased density of Ge nuclei on SiO2 surfaces with increasing SiHx exposure is interpreted in the context of the current experimental results. © 2015 American Institute of Chemicall Engineers.
News Article | October 26, 2016
According to the National Resource Defense Council, Americans waste up to $19 billion annually in electricity costs due to "vampire appliances," always-on digital devices in the home that suck power even when they are turned off. But University of Utah electrical and computer engineering professor Massood Tabib-Azar and his team of engineers have come up with a way to produce microscopic electronic switches for appliances and devices that can grow and dissolve wires inside the circuitry that instantly connect and disconnect electrical flow. With this technology, consumer products such as smartphones and computer laptops could run at least twice as long on a single battery charge, and newer all-digital appliances such as televisions and video game consoles could be much more power efficient. Tabib-Azar's research was published in a new paper this week in the current issue of Solid State Electronics. The paper was co-authored by Intel engineer Pradeep Pai, Omnivision Technologies engineer Yuying Zhang and IM Flash engineer Nurunnahar Islam Mou. To operate different functions, all electronics have switches that instantaneously turn electrical flow on and off throughout the circuitry, much like turning a light switch on and off. But unlike a mechanical switch, these solid-state switches waste small doses of electricity while they are in a waiting state. "Whenever they are off, they are not completely off, and whenever they are on, they may not be completely on," says Tabib-Azar, who also is a professor with the Utah Science Technology and Research (USTAR) initiative. "That uses battery life. It heats up the device, and it's not doing anything for you. It's completely wasted power." Tabib-Azar and his team have devised a new kind of switch for electronic circuits that uses solid electrolytes such as copper sulfide to literally grow a wire between two electrodes when an electrical current passes through them, turning the switch on. When you reverse the polarity of the electrical current, then the metallic wire between the electrodes breaks down--leaving a gap between them--and the switch is turned off. A third electrode is used to control this process of growing and breaking down the wire. "The distance between the two electrodes where the wire is grown can be as little as a nanometer long, which is as thin as 1/100,000 of the diameter of a hair," Tabib-Azar says. Consequently, billions of these switches could be built onto a computer processor or in solid-state memory chips such as the RAM in a laptop computer. In a smartphone, for example, this technology could be employed in the communications circuitry of the phone, which typically wastes battery power while it is in a state waiting to be used. Besides better power efficiency, another advantage of this technology is it would produce less heat in the appliance or device because less electrical current is constantly running though its circuitry. Heat buildup has especially been a problem with laptops and phones and can affect the reliability of components over time. Tabib-Azar added that this process doesn't require expensive retooling of manufacturing plants to implement it because these plants already use materials such as copper sulfide in the manufacturing of electronics. Right now, the only disadvantage to this process is that it is slower than typical switches in regular silicon-based electronics because of the time it takes to grow and break down the wires. But Tabib-Azar expects that to improve as he and his researchers continue to optimize the process. He also said this technology could be used for devices where speed isn't a priority but battery power is. "In lots of applications you really don't utilize the full speed of the silicon anyway," he says. "Right now, the biggest problem to solve is reducing the power leakage and addressing the energy-efficiency issues."
Gunasekera K.,University of Cincinnati |
Gunasekera K.,IM Flash |
Bhosle S.,University of Cincinnati |
Bhosle S.,IM Flash |
And 2 more authors.
Journal of Chemical Physics | Year: 2013
Variation of fragility (m) of specially homogenized GexSe 100-x melts is established from complex specific heat measurements and shows that m(x) has a global minimum at an extremely low value (m = 14.8(0.5)) in the 21.5% < x < 23% range of Ge. Outside of that compositional range, m(x) then increases first rapidly and then slowly to about m = 25-30. By directly mapping melt stoichiometry as a function of reaction time at a fixed temperature T > Tg, we observe a slowdown of melt-homogenization by the super-strong melt compositions, 21.5% < x < 23%. This range furthermore appears to be correlated to the one observed between the flexible and stressed rigid phase in network glasses. These spectacular features underscore the crucial role played by topology and rigidity in the properties of network-forming liquids and glasses which are highlighted when fragility is represented as a function of variables tracking the effect of rigidity. Finally, we investigate the fragility-glass transition temperature relationship, and find that reported scaling laws do not apply in the flexible phase, while being valid for intermediate and stressed rigid compositions. © 2013 AIP Publishing LLC.
Mccrate J.M.,University of Texas at Austin |
Mccrate J.M.,IM Flash |
Ekerdt J.G.,University of Texas at Austin
AIChE Journal | Year: 2016
Germanium nanoparticle growth on SiO2 proceeds via defect-mediated nucleation and particle density can be enhanced by chemically treating the SiO2 with SiHx. The influence of SiHx fragments on SiO2 surface sites is studied using a fluorescent probe-based technique to understand the chemical nature of the inherent defect trapping sites and the chemical nature of the additional trapping sites formed by SiHx. Oxygen-vacancy sites on SiO2 are the inherent sites for defect-mediated nucleation. SiHx fragments, generated by cracking disilane on a hot tungsten filament, are shown to react with strained siloxane sites, leading to a conversion of these strained siloxane sites into a different low density defect site that is shown to display reactive characteristics similar to the oxygen-vacancy defect sites. Previous work demonstrating an increased density of Ge nuclei on SiO2 surfaces with increasing SiHx exposure is interpreted in the context of the current experimental results. © 2016 American Institute of Chemical Engineers.
News Article | December 9, 2016
LAS VEGAS, NEVADA , Dec. 09, 2016 (GLOBE NEWSWIRE) -- Medical Cannabis Payment Solutions (OTC Link, REFG) president and CEO, Jeremy Roberts, recently announced it has retained Utah-based lobbying firm Paul Rogers and Associates to represent the company. Specifically, the firm will focus on government relations and lobbying while overseeing its efforts in many states and managing its other contract lobbyists. Paul Rogers is a registered lobbyist in multiple states, including Utah and Nevada. Mr. Rogers was elected to the Utah House of Representatives in 1978 and to the Utah State Senate in 1982. For the past 27 years, Paul has been influential in the outcome of numerous state issues related developing Utah's technology sector, economic development. tax policy, insurance, education, and health care. Among his clients are technological giants Facebook, 1-800 Contacts and IM Flash Technologies. “As we previously announced, meeting and networking with other states and their elected officials is invaluable as we continue our core business objectives,” said Mr. Roberts. “Paul Rogers and Associates will be instrumental as we work to introduce legislation in more states. We look forward to leveraging his expertise.” A report, released in March 2016 by Marijuana Business Daily, projects the marijuana industry will earn $44 billion by the year 2020, regardless of changes in legalization or decriminalization by the states or federal government. “We are incredibly excited about the direction the company is moving,” said Mr. Roberts. “We believe we are uniquely positioned to solve the banking and regulation problems facing legalized marijuana. These and our other efforts will have tremendous value to our shareholders.” Our mission is to provide end-to-end management, across multiple management systems, for medicinal marijuana operations. Many medicinal marijuana companies have experienced such rapid growth that they are finding it difficult to manage all aspects of their operation. In order to become a successful and compliant medicinal marijuana operation, effective management must depend on many different systems. REFG solves the fragmentation problem by identifying tools that are important to dispensaries, and customizing those tools specifically catered to the industry. We strive to create awareness within the medicinal marijuana industry and to develop an environmentally friendly, economically sustainable business while increasing shareholder value. For more information, please visit the company's website at: www.refg.co This press release may contain certain forward-looking statements and information, as defined within the meaning of Section 27A of the Securities Act of 1933 and Section 21E of the Securities Exchange Act of 1934, and is subject to the Safe Harbor created by those sections. This material contains statements about expected future events and/or financial results that are forward-looking in nature and subject to risks and uncertainties. Such forward-looking statements by definition involve risks, uncertainties and other factors, which may cause the actual results, performance or achievements of REFG to be materially different from the statements made herein.
Bennett J.,IM Flash |
Fury M.A.,Vantage Technology Corporation
ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 | Year: 2015
A Vantage SlurryScope was installed in an IMFT production fab CMP tool for slurry monitoring at point of use (POU). Data gathered over several weeks was compared to four different wafer yield metrics, including wafer defects associated with CMP scratching. A strong correlation was found between defects and the total particle count in the smallest (1.0-1.2μm) particle bin reported by the SlurryScope system. Discrete particle excursion events did not play a role in these correlations. The SlurryScope was then moved to the equipment chase to monitor large particles continuously in the slurry distribution system (SDS) main loop. Using the correlation methods learned at POU, a similar correlation was found between defects and drift in the measured total particle count. The SlurryScope data was also compared to a traditional offline monitoring method. The correlation coefficient was significantly higher for SlurryScope data in all four defect metrics included in this study. © 2014 IEEE.
Yang X.,Michigan State University |
Yang X.,IM Flash |
Chahal P.P.,Michigan State University
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2015
This paper investigates the design and fabrication of thin dielectric ribbon waveguides for terahertz (THz) circuit applications. Simulations indicate that dielectric thin ribbon waveguides provide low loss THz wave propagation when a combination of high dielectric constant (high-k) core and low dielectric constant (low-k) cladding are used. This combination provides stronger field confinement which helps in reducing losses at waveguide bends and allows higher density integration. Two different fabrication approaches are investigated: 1) photopatterning of spin coated nanocomposite thin films and 2) laser cutting of dry nanocomposite thin films. Characterization of nanocomposites-based waveguides is carried out over a wide frequency range in the THz spectral region. Measurements of a variety of different waveguide samples validate the simulated results and prove that low cost, wafer-level planar THz integrated circuits can be realized with polymer ceramic nanocomposite thin ribbon waveguides. © 2014 IEEE.
News Article | October 9, 2009
It seems that Apple has such of thirst for flash memory (for use in its iPods, iPhones, maybe tablets, etc.) that it’s having a profound effect on the flash suppliers. Tighter supplies, uncertainty about where to go for more flash, etc. Apple gets most of its flash memory from Samsung, but other people get flash from Samsung, too, and now they’re all, “Um, hey Samsung, do you have any flash for us?” Then Samsung shrugs its shoulders, “Yeah, man, Apple just paid us $80 zillion for the lot of it. You’ll have to go somewhere else. Sorry.” With Samsung so busy filling Apple orders, other companies have stepped in to fill the void. The biggest one is called IM Flash, based in Utah (of all places!). How does affect you? I’m going to guess that it won’t affect you in the least. Where Apple (or Microsoft, or Dell, or YourFavoriteCompany) buys its flash should never cross your mind. I just found it interesting that Apple needs flash oh so bad that it’s freaking out other companies, and directly impacting their behavior. Oh, Apple. I like you better when you were the underdog.
News Article | April 21, 2011
IM Flash, the joint venture between Intel and Micron Technology, has officially opened its Nand flash memory facility in the island state. The $3bn (£1.8bn) factory, which was originally slated to open in December 2008, met with delays and was at one point even shuttered, leaving 800 workers without jobs. Plans for the fab were revived in 2010, and the company initiated hiring in anticipation of ramping up production. At the launch of the facility on Thursday, IM Flash Singapore's managing director Chen Kok Sing said that the decision to "hibernate" investments in the plant during the downturn was "not a mistake" and it was necessary for the company to be "prudent". According to Chen, the company has been ramping production of Nand flash memory based on the 25nm process technology since mid-2010. The plant is also expected to manufacture chips using the 20nm process. For more on this ZDNet UK-selected story, see IM Flash unveils US$3B S'pore plant on ZDNet Asia.
News Article | February 26, 2017
A worker monitoring the automated material handling system as it carried wafers of memory chips at the IM Flash plant in Lehi, Utah, last month. Intel and Micron Technology own and operate the factory together.