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IM Flash Singapore LLP is a semiconductor company founded in February 2007, by Micron Technology and Intel Corporation. The joint-venture was set up to produce NAND Flash memory for the 2 owners, and was the second site set up, after the success of IM Flash Technologies. It was located in Senoko, Singapore.It was planned to begin operations in late 2008, but due to the global financial crisis that began that year, all 800 employees were retrenched. The plant, which had completed construction, was idled as the capital equipment had not moved into the plant.In 2010, preparations were made to start production by end of that year, as the IM Flash Technologies plant had reached maximum capacityIt officially opened in April 2011.On February 28, 2012, Micron and Intel announced that they would expand their NAND Flash memory joint venture relationship, to increase the flexibility and efficiency of the joint venture. Intel would sell its stake in IM Flash Singapore to Micron, along with its share of IM Flash Technologies assets in Micron's Manassas, Virginia plant.While the IMFS assets have been sold to Micron, there is an option in place for Micron to purchase Intel's interest in IMFT, per the disclosure in the company's 10Q SEC filing, 30 June 2012:"Micron Technology, Inc. and Intel formed IM Flash Technologies, LLC and IM Flash Singapore, LLP to manufacture NANDflash memory products for Micron and Intel. During the second quarter of 2012, we entered into agreements with Micron to modify our jointventure relationship. Under the agreements and as of June 30, 2012, we own a 49% interest in the remaining assets held by IMFT and no longerhold an ownership interest in IMFS. We received $605 million in the second quarter of 2012 from the sale of assets of IMFS and certain assetsof IMFT to Micron, which is reflected as a sale of assets within investing activities on the consolidated condensed statements of cash flows.The carrying value of our investment in IMFT was $587 million as of June 30, 2012 and is classified within other long-term assets.As part of the agreements to modify our joint venture relationship, we also entered into an amended operating agreement for IMFT, whichextends the term of IMFT to 2024, unless earlier terminated under certain terms and conditions, and provides that IMFT may manufacturecertain emerging memory technologies in addition to NAND flash memory. These agreements include a NAND Flash supply agreement forMicron to supply us NAND products. We provided approximately $365 million to Micron in the second quarter of 2012, which we expect willprimarily be applied to future product purchases under the supply agreement with Micron. A substantial majority of the $365 million isreflected as a cash flow used for operating activities. The agreements also extend Intel and Micron’s NAND joint development program andexpand it to include emerging memory technologies. Additionally, the amended agreement provides for certain rights that, beginning in 2015,provide us with the ability to sell to Micron, or Micron the ability to purchase from us, our interest in IMFT. If Intel exercises this right, Micronwould set the closing date of the transaction within two years following such election and could elect to receive financing from Intel for one totwo years.". As a result, IM Flash Singapore became wholly owned by Micron and became its fourth facility in Singapore. Wikipedia.


Mccrate J.M.,University of Texas at Austin | Mccrate J.M.,IM Flash | Ekerdt J.G.,University of Texas at Austin
AIChE Journal | Year: 2016

Germanium nanoparticle growth on SiO2 proceeds via defect-mediated nucleation and particle density can be enhanced by chemically treating the SiO2 with SiHx. The influence of SiHx fragments on SiO2 surface sites is studied using a fluorescent probe-based technique to understand the chemical nature of the inherent defect trapping sites and the chemical nature of the additional trapping sites formed by SiHx. Oxygen-vacancy sites on SiO2 are the inherent sites for defect-mediated nucleation. SiHx fragments, generated by cracking disilane on a hot tungsten filament, are shown to react with strained siloxane sites, leading to a conversion of these strained siloxane sites into a different low density defect site that is shown to display reactive characteristics similar to the oxygen-vacancy defect sites. Previous work demonstrating an increased density of Ge nuclei on SiO2 surfaces with increasing SiHx exposure is interpreted in the context of the current experimental results. © 2016 American Institute of Chemical Engineers. Source


Bennett J.,IM Flash | Fury M.A.,Vantage Technology Corporation
ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 | Year: 2015

A Vantage SlurryScope was installed in an IMFT production fab CMP tool for slurry monitoring at point of use (POU). Data gathered over several weeks was compared to four different wafer yield metrics, including wafer defects associated with CMP scratching. A strong correlation was found between defects and the total particle count in the smallest (1.0-1.2μm) particle bin reported by the SlurryScope system. Discrete particle excursion events did not play a role in these correlations. The SlurryScope was then moved to the equipment chase to monitor large particles continuously in the slurry distribution system (SDS) main loop. Using the correlation methods learned at POU, a similar correlation was found between defects and drift in the measured total particle count. The SlurryScope data was also compared to a traditional offline monitoring method. The correlation coefficient was significantly higher for SlurryScope data in all four defect metrics included in this study. © 2014 IEEE. Source


Yang X.,Michigan State University | Yang X.,IM Flash | Chahal P.P.,Michigan State University
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2015

This paper investigates the design and fabrication of thin dielectric ribbon waveguides for terahertz (THz) circuit applications. Simulations indicate that dielectric thin ribbon waveguides provide low loss THz wave propagation when a combination of high dielectric constant (high-k) core and low dielectric constant (low-k) cladding are used. This combination provides stronger field confinement which helps in reducing losses at waveguide bends and allows higher density integration. Two different fabrication approaches are investigated: 1) photopatterning of spin coated nanocomposite thin films and 2) laser cutting of dry nanocomposite thin films. Characterization of nanocomposites-based waveguides is carried out over a wide frequency range in the THz spectral region. Measurements of a variety of different waveguide samples validate the simulated results and prove that low cost, wafer-level planar THz integrated circuits can be realized with polymer ceramic nanocomposite thin ribbon waveguides. © 2014 IEEE. Source


Germanium nanoparticle growth on SiO2 proceeds via defect-mediated nucleation and particle density can be enhanced by chemically treating the SiO2 with SiHx. The influence of SiHx fragments on SiO2 surface sites is studied using a fluorescent probe-based technique to understand the chemical nature of the inherent defect trapping sites and the chemical nature of the additional trapping sites formed by SiHx. Oxygen-vacancy sites on SiO2 are the inherent sites for defect-mediated nucleation. SiHx fragments, generated by cracking disilane on a hot tungsten filament, are shown to react with strained siloxane sites, leading to a conversion of these strained siloxane sites into a different low density defect site that is shown to display reactive characteristics similar to the oxygen-vacancy defect sites. Previous work demonstrating an increased density of Ge nuclei on SiO2 surfaces with increasing SiHx exposure is interpreted in the context of the current experimental results. © 2015 American Institute of Chemicall Engineers. Source


News Article | April 21, 2011
Site: www.zdnet.com

IM Flash, the joint venture between Intel and Micron Technology, has officially opened its Nand flash memory facility in the island state. The $3bn (£1.8bn) factory, which was originally slated to open in December 2008, met with delays and was at one point even shuttered, leaving 800 workers without jobs. Plans for the fab were revived in 2010, and the company initiated hiring in anticipation of ramping up production. At the launch of the facility on Thursday, IM Flash Singapore's managing director Chen Kok Sing said that the decision to "hibernate" investments in the plant during the downturn was "not a mistake" and it was necessary for the company to be "prudent". According to Chen, the company has been ramping production of Nand flash memory based on the 25nm process technology since mid-2010. The plant is also expected to manufacture chips using the 20nm process. For more on this ZDNet UK-selected story, see IM Flash unveils US$3B S'pore plant on ZDNet Asia.

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