III Vlab

Marcoussis, France
Marcoussis, France

Time filter

Source Type

Rouvie A.,Ecole Polytechnique - Palaiseau | Huet O.,Ecole Polytechnique - Palaiseau | Hamard S.,Ecole Polytechnique - Palaiseau | Truffer Jp.,Ecole Polytechnique - Palaiseau | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers' new requirements. Especially, a 640x512 InGaAs module with a pitch of 15μm is actually under development to fill the needs of low light level imaging. © 2013 SPIE.


Dyakonova N.,CNRS Charles Coulomb Laboratory | El Fatimy A.,University of Cardiff | Meziani Y.,University of Salamanca | Coquillat D.,CNRS Charles Coulomb Laboratory | And 8 more authors.
Acta Physica Polonica A | Year: 2011

The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter wt and on boundary conditions of the channel. At wt 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.


Guillamet R.,INSA Rennes | Lagay N.,III VLab | Mocuta C.,SOLEIL | Carbone G.,European Synchrotron Radiation Facility | And 2 more authors.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2011

Growth of AlGaInAs/InP heterostructures by Selective Area Metal Organic Vapour Phase Epitaxy is investigated in this paper using advanced characterization techniques and numerical modelling. Synchrotron radiation and X-Ray optics allow to have micro or sub-micro X-Ray probe. With this probe, it is possible to characterize our samples by X-Ray Diffraction on very restricted area. This technique was first used on adapted samples to measure locally thickness and composition vatriation and thus to deduce the diffusion length D/ks of the different elements from group III in the vapour phase. The difficulty was to precisely quantify the D/ks simultaneously three elements from group III. In particular Aluminium D/ks parameter was extracted for the first time by X-ray microprobe techniques. D/ks is the only adjustable parameter of the vapour phase diffusion model. This model predicts thickness, composition and emission wavelength everywhere on the substrate and is used to design the dielectric mask patterning. D/ks is consequently a critical parameter and must be known precisely. Strain compensated AlGaInAs MQW were investigated and completely mapped by X-Ray diffraction in order to quantify material thickness and composition. Measurement and simulation have been compared and have shown excellent agreement. This comparison validates the numerical model and then will be used to design next generation of integrated devices. © VDE VERLAG GMBH.


Jardel O.,III VLab | Jacquet J.-C.,III VLab | Baczkowski L.,III VLab | Carisetti D.,Ecole Polytechnique - Palaiseau | And 7 more authors.
International Journal of Microwave and Wireless Technologies | Year: 2014

This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 μs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects. Copyright © Cambridge University Press and the European Microwave Association 2014.


Reverchon J.L.,III Vlab | Decobert J.,III Vlab | Huet O.,III Vlab | Lagay N.,III Vlab | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

SWIR image sensors based on p-i-n photodiodes arrays present a tremendous interest in applications often requiring a high intra-scene dynamics. This paper describes a single-chip InGaAs SWIR camera with more than 120 dB intrinsic operational dynamic range with an innovative CMOS ROIC technology initially developed by New Imaging Technologies for visible CMOS camera chip. A simplified camera with on chip fixed pattern noise correction is presented. We also present the next generation of focal plane arrays (FPA) based on a VGA format of 640 x 512 pixels with a pitch of 15 μm. These FPAs are associated to a logarithmic wide dynamic range ROIC. We give the electro-optics performances and particularly the visible extension capabilities. This InGaAs VGA logarithmic single-chip camera allows a high resolution SWIR camera with minimized system complexity and low power consumption. © 2011 SPIE.


Reverchon J.-L.,III VLab | Decobert J.,III VLab | Djedidi A.,III VLab | Gentner J.-L.,III VLab | And 9 more authors.
Optical Engineering | Year: 2011

Short-wavelength infrared image sensors based on p-i-n photodiode arrays present a tremendous interest in applications such as passive and active imagery for laser detection/warning, hot spot or detection for lasers sensors, enhanced vision systems or low light level sensors. The capability to work at room temperature with dark current equivalent to silicon-based devices is another motivation for the fast development of this technology. This paper presents several modules and camera based on InGaAs photodiode arrays from the III-VLab. First, we describe the electro-optics performance in terms of dark signal, sensitivity, and particularly the visible extension capability. We also present a nucless logarithmic sensor based on a 1/2 video graphics array (VGA) format at a pitch of 25 μm initially designed for visible CMOS camera chip. We will also present the next generation of focal plane arrays based on a VGA format of 640×512 pixels with a pitch of 15 μm. This array will be associated to a CTIA readout circuit and also to an innovative CMOS logarithmic wide dynamic range ROIC, developed by New Imaging Technologies. This VGA logarithmic device developed for automotive safety will involve visible extension capability in a European project named 2Wide-sense. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).


Rossetto I.,University of Padua | Rampazzo F.,University of Padua | Gerardin S.,University of Padua | Meneghini M.,University of Padua | And 10 more authors.
Solid-State Electronics | Year: 2015

Abstract Robustness of InAlN/GaN devices under proton radiation is investigated. Several proton fluences ranging from 1 × 1014 to 4 × 1014 have been considered on two typologies of devices. Displacement damage is found to be the major responsible of device DC degradation leading to threshold voltage positive shift, ON resistance increase and drain current decrease, in all cases well correlated with proton fluence. Negligible difference is noticed in displacement damage effects measured on different device typologies. Furthermore, device geometry does not influence the impact of proton radiation on main DC parameters, either if gate width or length are considered. Radiation significantly affects trapping properties. A good correlation between the so-called current collapse increase and proton fluence is demonstrated when a high gate drain voltage value is imposed as trapping condition. Moreover radiation enhances the contribution of dynamic ON resistance and transconductance peak variation on current collapse increase. © 2015 Elsevier Ltd.


Arellano C.,VPIphotonics GmbH | Richter A.,VPIphotonics GmbH | Mingaleev S.,Development Center | Koltchanov I.,VPIphotonics GmbH | Kazmierski C.,III VLab
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2014

We present a detailed circuit model for a monolithic integrated InP transmitter and its application for the study of technological limitations such the impact of non-ideal phase shifters and reflections at interfaces. © 2014 IEEE.


Rossetto I.,University of Padua | Rampazzo F.,University of Padua | Meneghini M.,University of Padua | Silvestri M.,University of Padua | And 9 more authors.
Microelectronics Reliability | Year: 2014

This paper studies the impact of C-doped GaN buffers on the dynamic performance and reliability of InAlN/GaN high electron mobility transistors. The analysis carried out on two different families of devices with different doping levels shows that carbon induces negligible differences in DC characteristics, which can be mainly ascribed to process variability. However, carbon doping is found to have a strong impact on the trapping characteristics: pulsed evaluation shows a significant current collapse, as well as dynamical shift in threshold voltage and transconductance drop. Drain current transient investigation reveals two main traps with apparent activation energy of 0.89 eV (T2) and 1.05 eV (T1), whose amplitudes are found to be correlated with carbon doping. A more detailed analysis suggests that trap T2 is located in the buffer layer. And that traps behave as a line defect. Finally, the reliability tests demonstrate that the use of high carbon doping does not significantly influence the robustness of the devices with respect to DC OFF-state stress. © 2014 Elsevier Ltd. All rights reserved.


Rouvie A.,III VLab | Reverchon J.-L.,III VLab | Huet O.,III VLab | Djedidi A.,III VLab | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety. © 2012 SPIE.

Loading III Vlab collaborators
Loading III Vlab collaborators