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Marcoussis, France

Rouvie A.,Ecole Polytechnique - Palaiseau | Huet O.,Ecole Polytechnique - Palaiseau | Hamard S.,Ecole Polytechnique - Palaiseau | Truffer Jp.,Ecole Polytechnique - Palaiseau | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers' new requirements. Especially, a 640x512 InGaAs module with a pitch of 15μm is actually under development to fill the needs of low light level imaging. © 2013 SPIE. Source

Arellano C.,VPIphotonics GmbH | Richter A.,VPIphotonics GmbH | Mingaleev S.,Development Center | Koltchanov I.,VPIphotonics GmbH | Kazmierski C.,III Vlab
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2014

We present a detailed circuit model for a monolithic integrated InP transmitter and its application for the study of technological limitations such the impact of non-ideal phase shifters and reflections at interfaces. © 2014 IEEE. Source

Guillamet R.,INSA Rennes | Lagay N.,III Vlab | Mocuta C.,SOLEIL | Carbone G.,European Synchrotron Radiation Facility | And 2 more authors.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2011

Growth of AlGaInAs/InP heterostructures by Selective Area Metal Organic Vapour Phase Epitaxy is investigated in this paper using advanced characterization techniques and numerical modelling. Synchrotron radiation and X-Ray optics allow to have micro or sub-micro X-Ray probe. With this probe, it is possible to characterize our samples by X-Ray Diffraction on very restricted area. This technique was first used on adapted samples to measure locally thickness and composition vatriation and thus to deduce the diffusion length D/ks of the different elements from group III in the vapour phase. The difficulty was to precisely quantify the D/ks simultaneously three elements from group III. In particular Aluminium D/ks parameter was extracted for the first time by X-ray microprobe techniques. D/ks is the only adjustable parameter of the vapour phase diffusion model. This model predicts thickness, composition and emission wavelength everywhere on the substrate and is used to design the dielectric mask patterning. D/ks is consequently a critical parameter and must be known precisely. Strain compensated AlGaInAs MQW were investigated and completely mapped by X-Ray diffraction in order to quantify material thickness and composition. Measurement and simulation have been compared and have shown excellent agreement. This comparison validates the numerical model and then will be used to design next generation of integrated devices. © VDE VERLAG GMBH. Source

Reverchon J.L.,III Vlab | Decobert J.,III Vlab | Huet O.,III Vlab | Lagay N.,III Vlab | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

SWIR image sensors based on p-i-n photodiodes arrays present a tremendous interest in applications often requiring a high intra-scene dynamics. This paper describes a single-chip InGaAs SWIR camera with more than 120 dB intrinsic operational dynamic range with an innovative CMOS ROIC technology initially developed by New Imaging Technologies for visible CMOS camera chip. A simplified camera with on chip fixed pattern noise correction is presented. We also present the next generation of focal plane arrays (FPA) based on a VGA format of 640 x 512 pixels with a pitch of 15 μm. These FPAs are associated to a logarithmic wide dynamic range ROIC. We give the electro-optics performances and particularly the visible extension capabilities. This InGaAs VGA logarithmic single-chip camera allows a high resolution SWIR camera with minimized system complexity and low power consumption. © 2011 SPIE. Source

Rossetto I.,University of Padua | Rampazzo F.,University of Padua | Meneghini M.,University of Padua | Silvestri M.,University of Padua | And 9 more authors.
Microelectronics Reliability | Year: 2014

This paper studies the impact of C-doped GaN buffers on the dynamic performance and reliability of InAlN/GaN high electron mobility transistors. The analysis carried out on two different families of devices with different doping levels shows that carbon induces negligible differences in DC characteristics, which can be mainly ascribed to process variability. However, carbon doping is found to have a strong impact on the trapping characteristics: pulsed evaluation shows a significant current collapse, as well as dynamical shift in threshold voltage and transconductance drop. Drain current transient investigation reveals two main traps with apparent activation energy of 0.89 eV (T2) and 1.05 eV (T1), whose amplitudes are found to be correlated with carbon doping. A more detailed analysis suggests that trap T2 is located in the buffer layer. And that traps behave as a line defect. Finally, the reliability tests demonstrate that the use of high carbon doping does not significantly influence the robustness of the devices with respect to DC OFF-state stress. © 2014 Elsevier Ltd. All rights reserved. Source

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