Saxonburg, PA, United States
Saxonburg, PA, United States
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Patent
Ii Vi Inc. | Date: 2016-08-31

Methods for compensating for warpage in a semiconductor structure comprising an epitaxial layer grown on a semiconductor substrate. The methods include forming a buffer layer on the epitaxial layer and forming a compensating layer on the buffer layer; forming a buffer layer on the semiconductor substrate and forming a compensating layer on the buffer layer; and forming grooves in the epitaxial layer.


The present invention describes a solid-state laser device based on a twisted-mode cavity and a volume grating, which comprises: a pumping source for emitting pump light; an optical resonator, which comprises: a cavity mirror, which is a high reflective mirror for introducing the pump light into the optical resonator; an output coupler, which is a reflective volume Bragg grating spaced away from the cavity mirror; a twisted-mode cavity, which includes: a first wave plate, located at one side close to the pumping source; a second wave plate, located at another side far away from the pumping source; a gain medium, located between the first wave plate and the second wave plate for generating a fundamental frequency laser; a focusing unit, located between the pumping source and the optical resonator for focusing the pump light emitting from the pumping source to the optical resonator.


Patent
Ii Vi Inc. | Date: 2017-02-21

Methods for compensating for bow in a semiconductor structure comprising an epitaxial layer grown on a semiconductor substrate. The methods include forming an adhesion layer on the backside of the wafer, and forming a stress compensation layer on the adhesion layer.


Zhou G.,Ii Vi Inc. | Wang Z.,Ii Vi Inc.
Optics InfoBase Conference Papers | Year: 2016

In this work, the film crack defect is described in details when observed during the development of an infrared film product. In consideration of the forming mechanism of film crack, DOE is conducted on different factors of material, substrate temperature and stack design, etc. Finally, the suitable design and process settings are built to eliminate film crack with the spectrum meeting customer requirements, successfully delivered infrared film products to volume production. © OSA 2016.


Trademark
Ii Vi Inc. and II VI Incorporated | Date: 2011-10-18

Optical products, namely, lenses, reflectors, mirrors, windows, beam expander-condensers, waveplates, phase retarders, polarizer-analyzer-attenuators, thin film polarizers and electro-optical modulators.


Wu P.,Ii Vi Inc.
Journal of Crystal Growth | Year: 2010

Extensive study of threading dislocations in 4H SiC crystals has been carried out using etching in molten KOH. In contrast to well-defined hexagonal pits formed on lightly doped 4H epilayers, etching of bulk 4H SiC crystals heavily doped with nitrogen produced rounded etch pits with their sizes varying in a wide range. Neither shape nor size of the etch pits in the bulk n+4H crystals could be used to distinguish between threading edge and treading screw dislocations. Data on the density of threading screw dislocations were obtained by counting etch pits on the carbon face of the wafers. Sequential steps of material removal, which included polishing followed by KOH etching, were used to track threading dislocations along the growth direction. It was found that a threading dislocation can produce etch pits of different sizes at different depths in the wafer. Mobility of the front of threading dislocations during growth was assessed by measuring change in the position of the dislocation etch pits upon sequential material removal. Statistical distribution of such displacements in the wafer plane was found to be lognormal. On average, the growth distance of 8 μm corresponded to the change in the etch pit position of about 2 μm. This shows that the front of threading dislocations has significant mobility during SiC sublimation growth, resulting in tilted or curved dislocation lines in the grown crystal. © 2009 Elsevier B.V. All rights reserved.


Trademark
Ii Vi Inc. | Date: 2016-09-28

Optical components and products for use with lasers, namely, lenses, partial reflectors, beamsplitters, mirrors; optical glass, nozzles, beam expander-condensers, waveplates, reflective phase retarders, polarizer-analyzer-attenuators (PAZ/PAG), thin film polarizers; electro-optical modulators; optical instruments and apparatus; optical data media; objectives; transparencies, single crystal wafer or chip to serve as a substrate for epitaxal deposition of electronic or photonic material structures or for an infrared imaging or detection unit, laser collimators, semiconductor substrates and wafers, brewster windows, mechanical and optical assemblies, focusing heads, beam director components, beam enhancement tools, beam diagnostic instruments, and integrators, semiconductor diode chips, semiconductor diode arrays, surface-emitting semiconductor diodes, edge emitting semiconductor diodes, optical pumps, 980 pumps, pump laser modules, pump lasers for optical amplifiers, high speed Datacom transceivers, vertical-cavity surface-emitting lasers, components for fiber and direct diode laser systems, laser processing heads and fiber beam delivery systems and components for laser material processing, scientific optical equipment, namely, laser cavities, laser crystals, thin film dielectric coatings for use in the manufacture of scientific optical equipment, polarization components, thin film polarizers, waveplates, polarization rotators, birefringent filter plates, birefringent filter units and lyot filters, prisms, coated optical mirrors, glass laser flow tubes, filters and lenses; components and subsystems for fiber optic communications, namely, tunable filters, sensors, monitors, chromatic dispersion compensators, polarization dispersion compensators, add/drop multiplexers, dynamic gain equalizers, tunable lasers and polarization controllers; components and subsystems for sensing and thermal imaging, namely, tunable optical detectors, tunable optical emitters, tunable optical filters, drive electronics for tunable optical detectors, tunable optical emitters, tunable optical filters, tunable optical sensors, infrared gas sensors, infrared chemical sensors, infrared biomedical sensors, focal plane arrays, wavelength translators, thermal camera engines, thermal cameras and optical amplifiers; Photonic processors, namely, channel processors for dense wavelength division multiplexing of telecommunications signals carried by optic fibers; semiconductor substrates and wafers, silicon carbide wafers and wafer chucks, silicon carbide water cooled mirror, green lasers, and fiber pigtailed laser diode modules, micro-optics for wave-length selective switches, ceramic and metal matrix composites, apparatus for converting thermal and electrical energy for cooling, heating or temperature stabilizing electronics, namely, thermoelectric coolers and converters; electronic component coolers, thermoelectric sub-assemblies, air-to-air thermoelectric assemblies, and air-to-air heat exchangers, namely, thermoelectric-based cooling modules and energy harvesting modules, power generators, and optical windows.


Gupta R.P.,Ii Vi Inc. | McCarty R.,Ii Vi Inc. | Sharp J.,Ii Vi Inc.
Journal of Electronic Materials | Year: 2014

The impact of contact resistance on thermoelectric (TE) device performance grows more significant as devices are scaled down. To improve and understand the effects of contact resistance on bulk TE device performance, a reliable experimental measurement method is needed. There are many popular methods to extract contact resistance, but they are only well suited for measuring metal contacts on thin films and do not necessarily translate to measuring contact resistance on bulk TE materials. The authors present a measurement technique that precisely measures contact resistance on bulk TE materials by making and testing stacks of bulk, metal-coated TE wafers using TE industry-standard processes. An equation that uses the Z of the stacked device to extract the contact resistance is used to reduce the sensitivity to resistivity variations of the TE material. Another advantage of this technique is that it exploits realistic TE device manufacturing techniques and results in an almost device-like structure. The lowest contact resistivity measured was 1.1 × 10-6 Ω cm2 and 1.3 × 10-6 Ω cm2 for n- and p-type materials, respectively using a newly developed process at 300 K. The uncertainty in the contact resistivity values for each sample was 10% to 20%, which is quite good for measurements in the 10 -6 Ω cm2 range. © 2013 TMS.


Trademark
Ii Vi Inc. | Date: 2016-10-13

Optical components and products for use with lasers, namely, lenses, partial reflectors, beamsplitters, mirrors; optical glass, nozzles, beam expander-condensers, waveplates, reflective phase retarders, polarizer-analyzer-attenuators (PAZ/PAG), thin film polarizers; electro-optical modulators; optical instruments and apparatus; optical data media; objectives; transparencies, single crystal wafer or chip to serve as a substrate for epitaxal deposition of electronic or photonic material structures or for an infrared imaging or detection unit, laser collimators, semiconductor substrates and wafers, brewster windows, mechanical and optical assemblies, focusing heads, beam director components, beam enhancement tools, beam diagnostic instruments, and integrators, semiconductor diode chips, semiconductor diode arrays, surface-emitting semiconductor diodes, edge emitting semiconductor diodes, optical pumps, 980 pumps, pump laser modules, pump lasers for optical amplifiers, high speed Datacom transceivers, vertical-cavity surface-emitting lasers, components for fiber and direct diode laser systems, laser processing heads and fiber beam delivery systems and components for laser material processing, scientific optical equipment, namely, laser cavities, laser crystals, thin film dielectric coatings for use in the manufacture of scientific optical equipment, polarization components, thin film polarizers, waveplates, polarization rotators, birefringent filter plates, birefringent filter units and lyot filters, prisms, coated optical mirrors, glass laser flow tubes, filters and lenses; components and subsystems for fiber optic communications, namely, tunable filters, sensors, monitors, chromatic dispersion compensators, polarization dispersion compensators, add/drop multiplexers, dynamic gain equalizers, tunable lasers and polarization controllers; components and subsystems for sensing and thermal imaging, namely, tunable optical detectors, tunable optical emitters, tunable optical filters, drive electronics for tunable optical detectors, tunable optical emitters, tunable optical filters, tunable optical sensors, infrared gas sensors, infrared chemical sensors, infrared biomedical sensors, focal plane arrays, wavelength translators, thermal camera engines, thermal cameras and optical amplifiers; Photonic processors, namely, channel processors for dense wavelength division multiplexing of telecommunications signals carried by optic fibers; semiconductor substrates and wafers, silicon carbide wafers and wafer chucks, silicon carbide water cooled mirror, green lasers, and fiber pigtailed laser diode modules, micro-optics for wave-length selective switches, ceramic and metal matrix composites, apparatus for converting thermal and electrical energy for cooling, heating or temperature stabilizing electronics, namely, thermoelectric coolers and converters; electronic component coolers, thermoelectric sub-assemblies, air-to-air thermoelectric assemblies, and air-to-air heat exchangers, namely, thermoelectric-based cooling modules and energy harvesting modules, power generators, and optical windows.

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