Entity

Time filter

Source Type

Frankfurt (Oder), Germany

Ojefors E.,Sivers IMA AB | Heinemann B.,Ihp Microelectronics | Pfeiffer U.R.,University of Wuppertal
IEEE Transactions on Microwave Theory and Techniques | Year: 2012

Monolithically integrated 220- and 320-GHz receiver front-ends manufactured in an engineering version of an f T/f max=280/435-GHz SiGe technology are presented. Subharmonic mixing is provided by a Gilbert cell with stacked switching quads fed by quadrature 110/160-GHz local oscillator (LO) signals. The 220-GHz version of the front-end is equipped with an integrated LNA with a measured 15-dB gain and 28-GHz bandwidth. This front-end yields a conversion gain of 16 dB, an 18-dB single-sideband (SSB) noise figure (NF), and a 30-GHz bandwidth when pumped with a 0-dBm 110-GHz LO signal. The 320-GHz version of the front-end omits the low-noise amplifier and features an integrated × 9 LO multiplier chain to facilitate operation and characterization. A conversion gain of -14 dB and a 36-dB SSB NF is obtained over the 313-to-328-GHz frequency range. The presented circuits demonstrate that a fully integrated receiver front-end can be implemented up to submillimeter-wave frequencies in an SiGe HBT technology. © 2012 IEEE.


Zaumseil P.,Ihp Microelectronics
Journal of Applied Crystallography | Year: 2015

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω-2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range. © 2015.


Wang P.,University of California at Los Angeles | Liang O.,University of California at Los Angeles | Zhang W.,University of California at Los Angeles | Schroeder T.,Ihp Microelectronics | Xie Y.-H.,University of California at Los Angeles
Advanced Materials | Year: 2013

A graphene-Au nano-pyramid hybrid system that enables label-free single molecule detection is demonstrated. The bio-compatible graphene-based SERS platform boosts a high density of hot spots with local SERS enhancement factor over 1010. We demonstrate that graphene can play a key role in quantitative study of SERS mechanisms, and can also serve as a promising building block in SERS active structures especially for biosensor applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Ojefors E.,University of Wuppertal | Heinemann B.,Ihp Microelectronics | Pfeiffer U.R.,University of Wuppertal
IEEE Transactions on Microwave Theory and Techniques | Year: 2011

A 325-GHz × 18 frequency multiplier chain implemented in a f T/f max=250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively. © 2011 IEEE.


Knochenhauer C.,TU Dresden | Scheytt J.C.,Ihp Microelectronics | Ellinger F.,TU Dresden
IEEE Journal of Solid-State Circuits | Year: 2011

This paper presents a high-speed, low-power modulator driver featuring a novel modified breakdown voltage doubler (BVD) topology. Further speed enhancement and reduction of power consumption is achieved by multiple frequency compensation methods. An optimization method combining small and large-signal analyses is presented. The driver was fabricated in a 0.25- μm SiGe BiCMOS technology with $fT of up to 180 GHz. It features 13-dB differential gain, a small-signal bandwidth of 33.7 GHz and delivers a single-ended output swing of 3 Vpp (6 Vpp differential) at 40 GBit/s into a 50-Ω load consuming only 1.35 W of DC power. © 2011 IEEE.

Discover hidden collaborations