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Versailles, France

Rostaing G.,Ecole Normale Superieure de Cachan | Berkani M.,Ecole Normale Superieure de Cachan | Mechouche D.,Ecole Normale Superieure de Cachan | Labrousse D.,Ecole Normale Superieure de Cachan | And 3 more authors.
Microelectronics Reliability | Year: 2013

This study aims to assess the reliability of smart converters for applications using 24 V batteries. It compares degradation effects and lifetime durations for similar dissipated energies when these smart power switches are subjected to normal and extreme protection test conditions. Three experimental ageing tests have been performed: (i) ageing tests under normal protection mode, (ii) ageing tests under repetitive inductive avalanche switching and (iii) ageing tests under repetitive short-circuit. Evolution of several electrical parameters such as on-state resistance; threshold voltage and saturation current have been monitored. Tested devices under normal condition and under repetitive inductive avalanche have failed after about the same number of cycles with the same dissipated energy. However, several results show a significant decrease of the lifetime under repetitive short-circuit tests for a similar dissipated energy. © 2013 Elsevier Ltd. All rights reserved. Source


Bouarroudj-Berkani M.,Ecole Normale Superieure de Cachan | Lefebvre S.,Ecole Normale Superieure de Cachan | Othman D.,Ecole Normale Superieure de Cachan | Sabrine S.M.,Ecole Normale Superieure de Cachan | And 2 more authors.
Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011 | Year: 2011

The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes corresponding to current limitation operations. Experimental tests are detailed and the evolution during tests of ageing indicators like on-state resistance and saturation current are discussed. Finally, thermal simulation results are presented in order to understand and explain evolutions of some ageing indicators. © 2011 EPE Association - European Power Electr. Source


Othman D.,Thales Alenia | Othman D.,Ecole Normale Superieure de Cachan | Lefebvre S.,Ecole Normale Superieure de Cachan | Berkani M.,Ecole Normale Superieure de Cachan | And 3 more authors.
Microelectronics Reliability | Year: 2013

This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests. Observed failures appear at the gate level with effects on the mode of failure depending of the short-circuit duration. © 2013 Elsevier Ltd. All rights reserved. Source


Othman D.,Thales Alenia | Othman D.,Ecole Normale Superieure de Cachan | Berkani M.,Ecole Normale Superieure de Cachan | Lefebvre S.,Ecole Normale Superieure de Cachan | And 3 more authors.
Microelectronics Reliability | Year: 2012

This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experimental measurements of steady-on-state resistance dependence and transient performances with temperature are presented and discussed. The second section focuses mainly on robustness aspects of the two types of power transistors in order to analyze their capability to withstand with aeronautic harsh environmental constrains. © 2012 Elsevier Ltd. All rights reserved. Source


Othman,Thales Alenia | Othman,Ecole Normale Superieure de Cachan | Lefebvre S.,Ecole Normale Superieure de Cachan | Berkani M.,Ecole Normale Superieure de Cachan | And 3 more authors.
2013 15th European Conference on Power Electronics and Applications, EPE 2013 | Year: 2013

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test. © 2013 IEEE. Source

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