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Saint-André-lez-Lille, France

Grzyb J.,University of Wuppertal | Sherry H.,University of Wuppertal | Sherry H.,STMicroelectronics | Zhao Y.,University of Wuppertal | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-cost portable systems operating at room-temperature with a video-rate speed and capable of delivering acceptable sensitivity at the very low-power consumption levels to become attractive for truly commercial applications. In particular, CMOS technologies are of interest due to their high integration level offered at a high yield that is capable of massive cost reduction of currently existing THz systems. It has been recently demonstrated that CMOS direct detectors achieve the performance comparable or even superior to the today's existing classical THz devices for active imaging operating at room-temperature. So far, however, only single pixels have been used, allowing only a raster-scan operation. To address this obstacle, we present the very initial work on a 1k-pixel camera chip with a completely integrated readout circuitry and with a full video-rate capability at a power consumption of 2.5μW/pixel. The chip is fully compliant with an industrial bulk CMOS technology and it is intended for active imaging applications. It exhibits a pixel pitch of 80μm, defined by a novel on-chip wire ring antenna, and is designed to accommodate silicon hyper-hemispherical lens for a wide operation bandwidth of at least 0.7-1.1 THz. © 2012 SPIE.

Grzyb J.,University of Wuppertal | Sherry H.,University of Wuppertal | Sherry H.,STMicroelectronics | Cathelin A.,STMicroelectronics | And 2 more authors.
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz | Year: 2012

This paper reports on co-design between CMOS direct detectors and silicon lens-integrated on-chip antennas. Due the appropriate impedance characteristics of the differentially driven antenna, broadband detector operation over multiple hundred GHz centered around 900 GHz could be achieved. The overall pixel layout is fully compatible with an industry qualified CMOS technology. © 2012 IEEE.

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