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Aoba ku, Japan

Lee X.,Okayama University | Sugawara Y.,Kuramoto Seisakusho Co. | Ito A.,Kuramoto Seisakusho Co. | Oikawa S.,Kuramoto Seisakusho Co. | And 9 more authors.
Organic Electronics: physics, materials, applications | Year: 2010

O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG. © 2010 Elsevier B.V. All rights reserved. Source


A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode.


Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120 C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.


Patent
Ideal Star Inc. | Date: 2010-01-21

A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.


A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

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