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Home > Press > GLOBALFOUNDRIES Extends FDX™ Roadmap with 12nm FD-SOI Technology: 12FDXTM delivers full-node scaling, ultra-low power, and software-controlled performance on demand Abstract: GLOBALFOUNDRIES today unveiled a new 12nm FD-SOI semiconductor technology, extending its leadership position by offering the industry’s first multi-node FD-SOI roadmap. Building on the success of its 22FDXTM offering, the company’s next-generation 12FDXTM platform is designed to enable the intelligent systems of tomorrow across a range of applications, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles. As the world becomes more and more integrated through billions of connected devices, many emerging applications demand a new approach to semiconductor innovation. The chips that make these applications possible are evolving into mini-systems, with increased integration of intelligent components including wireless connectivity, non-volatile memory, and power management—all while driving ultra-low power consumption. GLOBALFOUNDRIES’ new 12FDX technology is specifically architected to deliver these unprecedented levels of system integration, design flexibility, and power scaling. 12FDX sets a new standard for system integration, providing an optimized platform for combining radio frequency (RF), analog, embedded memory, and advanced logic onto a single chip. The technology also provides the industry’s widest range of dynamic voltage scaling and unmatched design flexibility via software-controlled transistors—capable of delivering peak performance when and where it is needed, while balancing static and dynamic power for the ultimate energy efficiency. “Some applications require the unsurpassed performance of FinFET transistors, but the vast majority of connected devices need high levels of integration and more flexibility for performance and power consumption, at costs FinFET cannot achieve,” said GLOBALFOUNDRIES CEO Sanjay Jha. “Our 22FDX and 12FDX technologies fill a gap in the industry’s roadmap by providing an alternative path for the next generation of connected intelligent systems. And with our FDX platforms, the cost of design is significantly lower, reopening the door for advanced node migration and spurring increased innovation across the ecosystem.” GLOBALFOUNDRIES’ new 12FDX technology is built on a 12nm fully-depleted silicon-on-insulator (FD-SOI) platform, enabling the performance of 10nm FinFET with better power consumption and lower cost than 16nm FinFET. The platform offers a full node of scaling benefit, delivering a 15 percent performance boost over today’s FinFET technologies and as much as 50 percent lower power consumption. “Chip manufacturing is no longer one-shrink-fits-all. While FinFET is the technology of choice for the highest-performance products, the industry roadmap is less clear for many cost-sensitive mobile and IoT products, which require the lowest possible power while still delivering adequate clock speeds,” said Linley Gwennap, founder and principal analyst of the Linley Group. “GLOBALFOUNDRIES’ 22FDX and 12FDX technologies are well positioned to fill this gap by offering an alternative migration path for advanced node designs, particularly those seeking to reduce power without increasing die cost. Today, GLOBALFOUNDRIES is the only purveyor of FD-SOI at 22nm and below, giving it a clear differentiation.” “When 22FDX first came out from GLOBALFOUNDRIES, I saw some game-changing features. The real-time tradeoffs in power and performance could not be ignored by those needing to differentiate their designs,” said G. Dan Hutcheson, chairman and CEO of VLSI Research. “Now with its new 12FDX offering, GLOBALFOUNDRIES is showing a clear commitment to delivering a roadmap for this technology -- especially for IoT and Automotive, which are the most disruptive forces in the market today. GLOBALFOUNDRIES’ FD-SOI technologies will be a critical enabler of this disruption.” “FD-SOI technology can provide real-time trade-offs in power, performance and cost for those needing to differentiate their designs," said Handel Jones, founder and CEO, IBS, Inc. “GLOBALFOUNDRIES' new 12FDX offering delivers the industry’s first FD-SOI roadmap that brings the lowest cost migration path for advanced node design, enabling tomorrow's connected systems for Intelligent Clients, 5G, AR/VR, Automotive markets." GLOBALFOUNDRIES Fab 1 in Dresden, Germany is currently putting the conditions in place to enable the site's 12FDX development activities and subsequent manufacturing. Customer product tape-outs are expected to begin in the first half of 2019. "We are excited about the GLOBALFOUNDRIES 12FDX offering and the value it can provide to customers in China," said Dr. Xi Wang, Director General, Academician of Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology. “Extending the FD-SOI roadmap will enable customers in markets such as mobile, IoT, and automotive to leverage the power efficiency and performance benefits of the FDX technologies to create competitive products." “NXP's next generation of i.MX multimedia applications processors are leveraging the benefits of FD-SOI to achieve both leadership in power efficiency and scaling performance-on-demand for automotive, industrial and consumer applications,” said Ron Martino, vice president, i.MX applications processor product line at NXP Semiconductors. “GLOBALFOUNDRIES’ 12FDX technology is a great addition to the industry because it provides a next generation node for FD-SOI that will further extend planar device capability to deliver lower risk, wider dynamic range, and compelling cost-performance for smart, connected and secure systems of tomorrow.” “As one of the first movers of design for FD-SOI, VeriSilicon leverages its Silicon Platform as a Service (SiPaaS) together with experience in delivering best-in-class IPs and design services for SoCs,” said Wayne Dai, president and CEO of VeriSilicon. “The unique benefits of FD-SOI technologies enable us to differentiate in the automotive, IoT, mobility, and consumer market segments. We look forward to extending our collaboration with GLOBALFOUNDRIES on their 12FDX offering and providing high-quality, low-power and cost-effective solutions to our customers for the China market.” “12FDX development will deliver another breakthrough in power, performance, and intelligent scaling as 12nm is best for double patterning and delivers best system performance and power at the lowest process complexity,” said Marie Semeria, CEO of Leti, an institute of CEA Tech. “We are pleased to see the results of the collaboration between the Leti teams and GLOBALFOUNDRIES in the U.S. and Germany extending the roadmap for FD-SOI technology, which will become the best platform for full system on chip integration of connected devices.” “We are very pleased to see a strong momentum and a very solid adoption from fabless customers in 22FDX offering. Now this new 12FDX offering will further expand FD-SOI market adoption,” said Paul Boudre, Soitec CEO. “At Soitec, we are fully prepared to support GLOBALFOUNDRIES with high volumes, high quality FD-SOI substrates from 22nm to 12nm. This is an amazing opportunity for our industry just in time to support a big wave of new mobile and connected applications.” About GLOBALFOUNDRIES GLOBALFOUNDRIES is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GLOBALFOUNDRIES is a foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GLOBALFOUNDRIES is owned by Mubadala Development Company. For more information, please click If you have a comment, please us. Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.


News Article | February 7, 2016
Site: http://www.sciencedaily.com/news/

IBS researchers create multiplex Digenome-seq to find errors in CRISPR-Cas9 processes.


News Article
Site: http://phys.org/nanotech-news/

Observing the location and angle of the GBs and the atomic structure. Credit: IBS The Center for Integrated Nanostructure Physics (CINAP) within IBS has reported results correlating the flake merging angle with grain boundary (GBs) properties, and proven that increasing the merging angle of GBs drastically improves the flow of electrons. This correlates to an increase in the carrier mobility from less than 1 cm2V-1s-1 for small angles, to 16cm2 V-1s-1 for angles greater than 20°. The paper, entitled, 'Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries' is published in the journal Nature Communications. According to the paper, it is essential to understand the atomic structures of GBs in order to control and improve electrical transport properties in both bulk and low-dimensional materials. Grain boundaries are the direction that atoms are arranged in a material. For the experiments undertaken by scientists at CINAP, a monolayer molybdenum disulfide (MoS2) was grown by chemical vapour deposition (CVD) and subsequently transferred to a substrate of silicon dioxide (SiO2). The team's reasoning for using MoS is twofold: firstly, it is a 2D semiconductor that features high electrical conductance and, crucially, has a natural bandgap, which enables it to be tuned on and off and; secondly, the grain boundaries are well-defined. This is paramount for successful experiments. Previous research from Northwestern University found that the GBs of MoS provided a unique way to modulate resistance; this was achieved by using a large electric field to spatially modulate the location of the grain boundaries. The Northwestern results, published last year in Nature Nanotechnology, opened a pathway for future research, but the debate regarding the transport physics at the GB is still under dispute. This is due to a large device-to-device performance variation, poor single-domain carrier mobility, and, most importantly, a lack of correlation between transport properties and GB atomic structures in MoS research. The CINAP team, headed by the Center's director Young Hee Lee, overcame these obstacles by directly correlating four-probe transport measurements across single GBs with both high-resolution transmission electron microscopy (TEM) imaging and first-principles calculations. TEM is a microscopy technique whereby a beam of electrons is transmitted through an ultra-thin specimen, interacting with the specimen as it passes through. An exact atomic-scale image is formed from the interaction of the electrons transmitted through the specimen. GBs in the MoS2 layers were identified and regions with no sign of wrinkling or multilayers were then selected to prevent misinterpretations. Four-probe transport measurements were then performed on the substrate with surprising results; when measuring flake misorientations of 8-20o, mobility increased from much less than 1 cm2V-1s-1 up to 16cm2 V-1s-1. Above 20o field effect mobility saturates at a 16cm2 V-1s-1 intra-domain cutoff. Thus, GBs between flakes having a misorientation angle of 20-60o show better transport properties. The team has, as reported in their paper, "provided a more unified picture of the relationship between mobility, merging angle and atomistic structures of the GBs of monolayer MoS ." The results provide practical expectations regarding transport properties in large-area films, which will be restricted largely by the poor mobility across GBs. The results obtained in this work are applicable to other similar 2D systems, and contribute to the fundamental understanding of transport in semiconductors. Explore further: New study gives insight into graphene grain boundaries More information: Thuc Hue Ly et al. Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries, Nature Communications (2016). DOI: 10.1038/ncomms10426


News Article
Site: http://phys.org/chemistry-news/

Prof. Oh-Hoon Kwon (School of Natural Science) is posing for a portrait with the ultrafast laser spectroscopy in the background. Credit: UNIST A new research, affiliated with UNIST has been featured as a 'Hot Article' on the front cover of the March issue of Chemistry: A European Journal. This study has been regarded as "very important" because it offers a new framework for understanding reactions in organic chemistry. The team, made up of five Korean scientists and experts from the IBS Center for Soft and Living Matter, the Korea Advanced Institute of Science and Technology (KAIST), and Ulsan National Institute of Science and Technology (UNIST), reported the basicity enhancement of an alcohol by hydrogen-bonded clustering. In their study, the team addressed the cooperative role of alcohols, the simplest organic protic compounds, in one of elementary reactions in chemistry, the acid-base reaction, in a quantitative manner. According to Prof. Oh-Hoon Kwon (Department of Chemistry, UNIST), the corresponding author of this study, "The motivation of this work, in particular, was the observation that the photoinduced proton transfer can also occur in alcohol with a properly chosen photoacid." The formation of an alkyl oxonium ion has long been proposed as a key reaction intermediate in alcohol dehydration. This was examined by time-resolved fluorescence quenching of a strong photoacid in their study. Through their analysis, the research team revealed, for the first time, that the collaboration of two alcohol molecules through hydrogen bonding is critical to enhancing their reactivity and promotes the resulting alcohol cluster to form an effective Brønsted base when reacting with an acid as strong as sulfuric acid. Prof. Kwon states, "This finding addresses, as in water, the cooperative role of protic solvent molecules to facilitate nonaqueous acid-base reactions." He continues, "However, further systematic investigation on the size variation of clusters formed from diverse alcohols of different basicity and photoacids of different acidity is currently underway." Explore further: Researchers move one step closer to sustainable hydrogen production More information: Sun-Young Park, Young Min Lee, Kijeong Kwac, Yousung Jung, Oh-Hoon Kwon. "Alcohol Dimer is Requisite to Form an Alkyl Oxonium Ion in the Proton Transfer of a Strong (Photo) Acid to Alcohol". Chemistry: A European Journal. (2016)


There has been huge interest in these materials as they hold vast potential in helping science to find a new semiconductor that can replace silicon which decomposes and segregates in a natural environment. A VdW heterostructure can overcome the limitations of 2D crystals and offer an alternative for the construction of smaller and more powerful storage devices, supercomputers, administration of medicine and enhanced memory and graphics in hand held devices. Electrons within semiconductors roam freely and have internal states or 'spins'. These spin currents exhibit magnetic order and can be tuned to prevent energy dissipation which occurs naturally when information is processed at vast speeds. However, not all VdW's have this spin state; scientifically known as an antiferromagnetic state. PARK Je-Geun, a scientist from CCES, explains the unique qualities of their tested material NiPS3: "The compound nickel phosphorus trisulfide (NiPS3) is an intrinsically magnetic material and is an invaluable building block for the design for multi-layered VdW heterostructures." The Center is the first to obtain monolayer and multilayer samples of magnetic VdW materials; the results lay the foundation for the development of future semiconductors that are high speed, low energy consuming and highly compact. The VdW material the IBS team experimented on belongs to a class of transition metals phosphorus trisulfides (MPS3) and, more importantly, exhibits antiferromagnetic order. With further developments, it can, theoretically, replace silicon as an ideal material for future magnetic semiconductors. The results compiled by the IBS team have never before been reported in the form of ultrathin sheets. The team's scientific paper, published on February 15 in Scientific Reports, outlined the potential of their work as such: "Beyond their already fascinating properties, these VdW heterostructures and superlattices may exhibit even more exotic behavior. In particular, for the design of spintronic devices, VdW materials that exhibit magnetic order would be highly desirable building blocks." Using the well-established Scotch tape technique, the Korean team exfoliated flakes of NiPS3 onto silicon capped by silicon oxide (SiO2). The resulting material was subjected to a heavy bombardment of high intensity lasers: a process called Raman spectroscopy, designed to provide specific information about molecular vibrations. Other forms of atomic scanning were performed to ascertain how different the atomic make-up of NiPS3 is, in comparison, to its bulk form: MPS3. The team recorded stark differences in the Raman spectra of thin NiPS3 from the bulk material and the Raman spectra varied clearly between sheets of different layer numbers. According to the paper, these results exhibit a "key significance of our results is that bulk MPS3 compounds exhibit magnetism, and antiferromagnetic ordering strongly influenced by interlayer coupling is known to take place at moderately low temperature." Up until now, it is quite expensive to obtain magnetic monolayer oxides materials as it requires a high-end device and the material itself is less likely to be commercially available for technical use. This study proves that monolayer magnetic material can be obtained using magnetic atom like nickel (Ni) as well as many other magnetic atoms such as iron (Fe). The work of the IBS team is, tentatively, laying the foundations for the future study of spin-memory materials. Research is continuously driven by our collective scientific curiosity; we are within reach of precise control of electrons and atoms which would herald a new era of scientific exploration. The research team's next mission is to obtain a magnetic monolayer material at moderate temperature. If they succeed, it will be very crucial step in commercializing magnetic semiconductors. More information: Cheng-Tai Kuo et al. Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals Crystals, Scientific Reports (2016). DOI: 10.1038/srep20904

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