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Alaró, Spain

Alvarez M.,National Institute for Aerospace Technology INTA | Hernando C.,National Institute for Aerospace Technology INTA | Cesari J.,IC Malaga | Pineda A.,IC Malaga | Garcia-Moreno E.,University Illes Balears
IEEE Transactions on Nuclear Science | Year: 2013

A new dosimeter for total ionizing dose that is based on a floating gate MOSFET is presented. The chip incorporates a reference standard MOSFET for temperature compensation and front-end electronics to provide manageable output signals. The floating gate is automatically recharged through an included charge pump circuitry, thus its operating range is spread without affecting the sensitivity. Two different sensitivity configurations are included in the same chip, so the dosimeter can be used under different radiation environments. An initial characterization has been carried out in order to evaluate its suitability for space missions. The results show that the proposed floating gate radiation dosimeter is adequate for space missions with levels of total ionizing dose up to at least 10 krad(Si). © 2013 IEEE. Source


Danzeca S.,CERN | Cesari J.,IC Malaga | Brugger M.,CERN | Dusseau L.,IES Inc | And 3 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

In this work a prototype of a floating gate sensor FGDOS has been characterized with a 60Co source and with protons. The dependency of the sensor sensitivity on the dose rate and accumulated Total Ionizing Dose (TID) are investigated. The proton test permits to measure the sensitivity of the sensor at different incoming particles energies. An analytical model of the sensor is presented in the paper and the theoretical sensitivity for the prototype of FGDOS is evaluated. Finally, the model allows to accurately measuring the charge yield for different particle types and different energies. © 2014 IEEE. Source


Picos R.,University of the Balearic Islands | Font J.,University of the Balearic Islands | Garcia E.,University of the Balearic Islands | Pineda A.,IC Malaga | Cesari J.,IC Malaga
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 | Year: 2012

We present the design and experimental characterization of a magnetic field sensor. This sensor is based on an array of Hall resistors and uses lateral BJTs as active elements to read the effect of the magnetic field on it. Its output is in current mode, instead of the more frequent voltage mode. Results show that a raw sensibility of 5mA/T can be achieved, with no measurable hysteresis. © 2012 IEEE. Source


Cesari J.,IC Malaga | Gomez D.,IC Malaga | Roca M.,University Illes Balears | Isern E.,University Illes Balears | And 2 more authors.
IEEE Radiation Effects Data Workshop | Year: 2014

A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The radiation sensor with an extra circuitry to emulate the radiation environment in order to discharge the floating gate has been tested using an automated measurement system. The sensor performance and reliability is analyzed after those tests. © 2014 IEEE. Source


Cesari J.,IC Malaga | Barbancho A.,IC Malaga | Pineda A.,IC Malaga | Ruy G.,Luxspace Sarl | Moser H.,Luxspace Sarl
IEEE Radiation Effects Data Workshop | Year: 2015

The radiation results from two Floating Gate sensors during the 4M (Manfred Memorial Moon Mission) lunar flyby mission are presented. Both sensors together with the On-Board Computer (OBC) transmitted the data to the ground stations during the mission. 216 hours data from the space is analyzed and compared with the expected results from simulations. A good correlation between simulations and data from the sensors is observed. © 2015 IEEE. Source

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