Ich'on, South Korea

Hynix Semiconductor Inc

www.skhynix.com
Ich'on, South Korea

SK Hynix Inc. is a South Korean memory semiconductor supplier of dynamic random access memory chips and flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's sixth-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing sites in Korea, the US, China and Taiwan. In 2012, when SK Telecom became its major shareholder, Hynix merged to SK Group, the third largest conglomerate in South Korea. The company's shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange.Hynix memory is used by Apple Inc. in some of their MacBook and Macbook Pro computers, by Asus in their Google-branded Nexus 7 tablet, is an OEM provider for IBM System x servers, and is used in PC desktops as well as the ASUS Eee PC. Dell and Hewlett-Packard have also used Hynix memory as OEM equipment. Other products which uses Hynix memory include DVD players, cellular phones, set-top boxes, personal digital assistants, networking equipment, and hard disk drives. Wikipedia.

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Patent
Hynix Semiconductor Inc | Date: 2013-05-15

A method for forming fine patterns of a semiconductor device employs a double patterning characteristic using a mask for forming a first pattern including a line pattern and a mask for separating the line pattern, and a reflow characteristic of a photoresist pattern.


Patent
Hynix Semiconductor Inc | Date: 2013-05-02

A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.


Patent
Hynix Semiconductor Inc | Date: 2014-09-12

An internal voltage compensation circuit is provided which includes a power up signal generator configured to generate a power up signal, a select signal generator configured to compare a level of a first external voltage with a level of a second external voltage to generate first and second select signals, wherein the second select signal is generated in response to the power up signal, and a voltage compensation unit configured to electrically connect an internal voltage to the first external voltage or the second external voltage in response to the first and second select signals.


An embodiment of an electronic device having a plurality of operative parameters is provided. The electronic device includes means for applying a plurality of trimming actions to each parameter for causing a corresponding correction of the parameter, for at least one reference parameter, means for measuring the reference parameter responsive to the application of at least part of the trimming actions, and means for forcing the application of the selected trimming action for the reference parameter. For each non-reference parameter different from the at least one reference parameter, the electronic device includes means for selecting one of the trimming actions for the non-reference parameter corresponding to the selected trimming action for the at least one reference parameter, and means for forcing the application of the selected trimming action for each non-reference parameter.


Patent
Hynix Semiconductor Inc | Date: 2012-03-19

A method for manufacturing an interconnection wiring structure of a semiconductor device includes forming an isolation region, which arranges active regions in a diagonal direction, in a semiconductor substrate; forming first damascene trenches, which open upper portions of a bit line contacts, by selectively etching a second interlayer insulation layer; forming bit lines which fill the first damascene trenches; forming second damascene trenches, which expose portions of the active region, by selectively etching the portion of a second interlayer insulation layer between the bit lines and the portion of the first interlayer insulation layer thereunder; attaching trench spacer on side walls of the second damascene trench; and forming storage node contact lines which fill the second damascene trenches.


Patent
Hynix Semiconductor Inc | Date: 2012-01-05

A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode bowing profiles having different heights, such that a spatial margin between the lower electrodes is assured and a bridge fail is prevented, resulting in improved device operation characteristics. The semiconductor device includes a first storage node contact plug and a second storage node contact plug formed over a semiconductor substrate, wherein the second storage node contact plug is arranged at a height different from that of the first storage node contact plug, and a lower electrode formed over the first storage node contact plug and the second storage node contact plug.


Patent
Hynix Semiconductor Inc | Date: 2012-03-13

A semiconductor package having an internal cooling system is presented which includes a semiconductor chip and a through-electrode. The semiconductor chip has a circuit section. The through-electrode passes through an upper surface and a lower surface the semiconductor chip. The through-electrode is electrically connected with the circuit section of the semiconductor chip. The through-electrode also has a through-hole for allowing cooling fluid to flow therethrough.


Patent
Hynix Semiconductor Inc | Date: 2013-01-30

A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal.


Patent
Hynix Semiconductor Inc | Date: 2013-01-30

A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal.


Patent
Hynix Semiconductor Inc | Date: 2013-02-15

In a method of fabricating a semiconductor device on a substrate having thereon a conductive layer, the conductive layer is patterned to form a plurality of opened regions. A gate insulation layer is formed on a side wall of each of the opened regions. A pillar pattern is formed in each opened region. On each pillar pattern, a gate electrode, which encloses the pillar pattern, is formed by removing the conductive layer between the pillar patterns.

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