Hunan Engineering Laboratory for Microelectronics

Xiangtan, China

Hunan Engineering Laboratory for Microelectronics

Xiangtan, China

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Chen C.,Xiangtan University | Chen C.,Hunan Engineering Laboratory for Microelectronics | Chen C.,China Electronics Technology Group Corporation | Wang H.,Xiangtan University | And 6 more authors.
Photonic Sensors | Year: 2014

Two silicon-based ultraviolet (UV) and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor (CMOS) process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same. © 2014, The Author(s).


Zhang F.,Xiangtan University | Zhang F.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University | Jin X.,Hunan Engineering Laboratory for Microelectronics | And 2 more authors.
Microsystem Technologies | Year: 2015

MEMS technology has been applied in many fields including deep oil exploration and seismic detection areas, of which poor performance has limited its development until the sigma-delta modulation is added. Many of researches for improving the performance of MEMS acceleration sensor had been put forward. In this paper, an effective way for design of feed-forward sigma-delta for MEMS acceleration sensor is proposed. It is well know that simulation parameters are mainly about two parts including mechanical parameters and sigma-delta modulator parameters. Different mechanical parameters match the different sigma-delta parameters. Furthermore, the simulation model is designed successfully under idea environment in MATLAB, which cannot indicate it can reach the same performance in real environment through taped out. Therefore, the useful model parameters which had been verified by taped out can be the most valuable parameters for MEMS readout design. In this paper, the work shows an optimized parameters design with signal to noise ration (SNR) of 148 dB and its experimental result can reach 142 dB. © 2015 Springer-Verlag Berlin Heidelberg


Yang L.,Xiangtan University | Yang L.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University | Jin X.,Hunan Engineering Laboratory for Microelectronics | And 4 more authors.
Solid-State Electronics | Year: 2015

Abstract The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS-SCR with and without P+ pickup. It verifies that the multi-finger LDMOS-SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS-SCR with P+ pickup remarkably decreases from 46.19 to 35.39 V and the second breakdown current (It2) effectively increases from 8.13 to 10.08 A. © 2015 Elsevier Ltd.


Jiang Q.,Xiangtan University | Jiang Q.,Hunan Engineering Laboratory for Microelectronics | Yuan H.,Xiangtan University | Yuan H.,Hunan Engineering Laboratory for Microelectronics | And 4 more authors.
Microelectronics Reliability | Year: 2015

The occurrence of transient induced latch up (TLU) in RS485 transceiver IC with on-chip Transient Voltage Suppressor (TVS) under electrical fast transient (EFT) test is studied. A RS485 transceiver fabricated by a 0.5-μm CDMOS process was used in the test, the latch-up and emission microscope (EMMI) tests are used for confirming the reason and position of latch-up. The trigger current injecting into the transceiver through RO port and generating the substrate current is the major cause of TLU under EFT test. Some measures in layout are taken to improve the TLU immunity of RS485 transceiver against EFT test. © 2015 Elsevier Ltd. All rights reserved.


Wang Y.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University | Zhou A.,Hunan Engineering Laboratory for Microelectronics | Yang L.,Hunan Engineering Laboratory for Microelectronics
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 | Year: 2014

Source and bulk layout style is investigated for the purpose of improving ESD performance of multi-fingered high-voltage (HV) LDMOS. The device with bulk and source interleaved dotting (BSDOT) is fabricated in a 0.5μm 24V CDMOS process. Its ESD characteristics are studied employing transmission line pulse (TLP) measurement. Compared to traditional gate grounded nLDMOS (GG-nLDMOS) with a total length of 400μm, the proposed device can effectively increase the secondary breakdown current (It2) from 2.43A to 5.55A without any extra chip area. © 2014 IEEE.


Yang L.,Hunan Engineering Laboratory for Microelectronics | Wang Y.,Hunan Engineering Laboratory for Microelectronics | Zhou A.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University
Solid-State Electronics | Year: 2014

A novel structure, which is achieved by inserting P+ slots into the polygate of traditional LDMOS-SCR, has been designed to improve the holding voltage. The proposed structure called GateDot was fabricated in 0.5 μm 18 V CDMOS process. In this study, comparative analysis is carried out to make detailed comparisons between conventional LDMOS-SCR and the new proposed structure. GateDot not only maintains superiorities of low trigger voltage and strong capability of shunting ESD current in conventional LDMOS-SCR structure, but also increases the holding voltage greatly. To verify its advantages, theoretical analysis and TCAD device simulations were provided during the course of research. TLP (Transmission Line Pulse) test has been done and the results show that the holding voltage can effectively increase from 7.00 V to 10.17 V, 45.29% increment compared to traditional LDMOS-SCR, which is highly appeal to the simulation results. © 2014 Elsevier Ltd. All rights reserved.


Jin X.,Xiangtan University | Jin X.,Hunan Engineering Laboratory for Microelectronics | Jiang Z.,Xiangtan University | Jiang Z.,Hunan Engineering Laboratory for Microelectronics | And 2 more authors.
Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015 | Year: 2015

In this paper, Ultraviolet (UV) and blue-extended photodiode with octagon-ring-shaped structure is proposed, which have increased responsivity for the UV and blue light, high responsive speed with UV/blue selectivity. To enhance the speed of the photodiode further, an Interrupted-P-Finger is employed instead of a continuous P+ region for maximizing the depletion regions available for carrier collection, particularly near the surface of the device. With new layer (SEN and CPI) structure into four different structures. TCAD simulation approach is used to optimization and analysis the structural characteristics and photoelectric characteristics of this Interrupted-P-Finger Photodiode. For the photoelectric characteristics, the influences caused by the new layer on opto-current response, dark current, avalanche breakdown voltage and wavelength response are discussed in detail. © 2015 IEEE.


Wang Y.,Xiangtan University | Wang Y.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University | Jin X.,Hunan Engineering Laboratory for Microelectronics | And 2 more authors.
IET Power Electronics | Year: 2015

A device with bulk and source interleaved dotting is fabricated in a 0.5-μm 24 V CDMOS process, and the root cause of why it improves the multi-finger high-voltage lateral double-diffused MOS (LDMOS)'s electrostatic discharge (ESD) robustness is detected by Atlas three-dimensional device simulation and transmission line pulse system. Such device structure obtains strong ESD robustness by enlarging the intrinsic base resistance without increasing device area and sacrificing any ESD performance of nLDMOS. The measurement results demonstrated that, compared with traditional gate-grounded nLDMOS (GG-nLDMOS) with a total length of 400 μm, the proposed device can effectively raise the secondary breakdown current (It2) from 2.43 A up to 5.55 A, and enhance the ESD current discharge efficiency from 0.29 to 0.70 mA/μm2. © 2015 The Institution of Engineering and Technology.


Ma M.,Xiangtan University | Ma M.,Hunan Engineering Laboratory for Microelectronics | Jin X.,Xiangtan University | Jin X.,Hunan Engineering Laboratory for Microelectronics | Li Z.,Xiangtan University
Journal of Communications Technology and Electronics | Year: 2014

A switched biasing quadrature oscillator with LC tanks (SB-QLCO) is proposed to achieve low voltage and low phase noise. In this work, coupling devices, capacitors, don’t contributes any noise and this second harmonics coupling technique leads to low voltage. The proposed QLCO was simulated in 0.18 μm CMOS process. Simulating results showed a phase noise of −126 dBc/Hz at an offset of 1 MHz and a phasenoise figure of merit of 193 dB while consuming 6 mA from a 0.8 V power supply. © 2014, Pleiades Publishing, Inc.


Wang L.,Xiangtan University | Wang L.,Hunan Engineering Laboratory for Microelectronics | Xie L.,Xiangtan University | Xie L.,Hunan Engineering Laboratory for Microelectronics | And 2 more authors.
Analog Integrated Circuits and Signal Processing | Year: 2014

Sigma-delta modulation has been widely used in micro-machined accelerometers. Previous researches are mainly focused on increasing the order of the sigma-delta modulator for the mechanical sensor to improving the performance of the micro-machined accelerometers. These designs performed well in high resolution acceleration measurement, but they are insufficient in balancing the proof mass quickly while the micro-machined accelerometer is working. In this paper, the design of order-adjustable micro-machined accelerometer is proposed. It employs a mechanical sensor to balance the proof mass, and a fifth order MEMS accelerator to measure the acceleration with high resolution. Furthermore, this work shows an optimized design with a SQNR of 156.5 and 73.6 dB which can accurately measure the acceleration input and quickly balance the proof mass, respectively. © 2014 Springer Science+Business Media New York.

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