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Gao Y.,Tongji University | Gong X.,Tongji University | Makino T.,Hamamatsu Photonics K K | Kan H.,Hamamatsu Photonics K K | And 4 more authors.
Advanced Materials Research | Year: 2013

High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 μm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 μm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 μm. Peak detectivity Dλp* (6.5 μm, 1200 Hz) reached 5.4 × 109 cm Hz1/2 W-1 for InAs0.052Sb0.948 immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm Hz1/2 W-1 at the wavelength of 8 and 9 μm respectively. The good performances of InAsSb detectors indicate the possible detection applications. © (2013) Trans Tech Publications, Switzerland. Source


Gao Y.Z.,Tongji University | Gong X.Y.,Tongji University | Wu G.H.,Huaxing Infrared Device Company | Feng Y.B.,Huaxing Infrared Device Company | And 2 more authors.
Optoelectronics and Advanced Materials, Rapid Communications | Year: 2014

Uncooled InAs0.06Sb0.94and InAs0.02Sb0.98 photoconductorswith long wavelength were experimentally validated. Ge immersion lenses were set on the photoconductors. The detectorswere fabricated using InAsSb epitaxial single crystals grown on InAs substratesby melt epitaxy (ME) technique. At room temperature, the spectral photoresponse showed that the peak detectivity Dλp*at the wavelength of 6.5mm reaches ≥ 5.0 × 109cm Hz1/2 W-1,indicating the high sensitivityof the photoconductors. The detectivity D*of InAs0.06Sb0.94detectorsis 1.3 × 109and2.8 × 108cm Hz1/2 W-1at the wavelength of 8 and 9 mmrespectively, which is one order of magnitude higher than that of InAs0.02Sb0.98 detectors. The improvement of the sensitivity at 8 and 9 mm profits from the more arsenic composition in InAs0.06Sb0.94epilayers. ©2014 National Institute of Optoelectronics. All rights reserved. Source


Gao Y.-Z.,Tongji University | Gong X.-Y.,Tongji University | Wu G.-H.,Huaxing Infrared Device Company | Feng Y.-B.,Huaxing Infrared Device Company | And 4 more authors.
International Journal of Minerals, Metallurgy and Materials | Year: 2013

InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy (ME). Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 μm. The peak detectivity D λp * reached 5.4 × 109 cm·Hz1/2·W-1 for the immersed detectors. The detectivity D*was 9.3 × 108 and 1.3 × 10 8 cm·Hz1/2·W-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated. © 2013 University of Science and Technology Beijing and Springer-Verlag Berlin Heidelberg. Source


Gao Y.Z.,Tongji University | Gong X.Y.,Tongji University | Wu G.H.,Huaxing Infrared Device Company | Feng Y.B.,Huaxing Infrared Device Company | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2011

High-sensitivity uncooled InAsSb photoconductors with long wavelength were successfully fabricated. The detectors are based on InAsSb epilayers with the thickness of 100μm grown on InAs substrates by melt epitaxy (ME). Si optical lenses were set on the photoconductors without any antireflective coatings. At room temperature, the peak detectivity D•λp (6.5μm, 1200) reaches 5.3 × 109cm Hz1/2 W∼1 for InAsSb immersion photoconductors. The detectivity D• at the wavelength of 8μm is 1.5 × 108cmHz1/2 W∼1, and that at 9μm is 1.0 × 107cmHz1/2 W∼1. The excellent performance of the detectors indicates the potential applications for infrared (IR) detection and imaging at room temperature. © 2011 The Japan Society of Applied Physics. Source


Gao Y.-Z.,Tongji University | Gong X.-Y.,Tongji University | Zhou R.,Tongji University | Li J.-J.,Huaxing Infrared Device Company | And 3 more authors.
Optoelectronics Letters | Year: 2015

Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.05Sb0.95 and InAs0.09Sb0.91 thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs0.09Sb0.91 detectors is obviously extended to 11.5 µm, and that of InAs0.05Sb0.95 detectors is 8.3 µm. At room temperature, the peak detectivity of Dλp* at wavelength of 6.8 µm and modulation frequency of 1 200 Hz is 1.08×109 cm·Hz1/2·W−1 for InAs0.09Sb0.91 photoconductors, the detectivity D* at wavelength of 9 µm is 7.56×108 cm·Hz1/2·W−1, and that at 11 µm is 3.92×108 cm·Hz1/2·W−1. The detectivity of InAs0.09Sb0.91 detectors at the wavelengths longer than 9 µm is about one order of magnitude higher than that of InAs0.05Sb0.95 detectors, which rises from the increase of arsenic (As) composition in InAs0.09Sb0.91 materials. © 2015, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. Source

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