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Miyazaki-shi, Japan

Patent
Honda Corporation and Honda Lock Manufacturing Co. | Date: 2010-01-21

A smart key system according to the present invention controls operations of devices mounted in a vehicle based on wireless communication between a control device mounted in the vehicle and a portable electronic key, and the control device includes a transmission circuit configured to output a request signal a predetermined number of times at predetermined times within a predetermined period in order to confirm authentication communication between the control device and a communication unit of the portable electronic key, and a communication mode switching unit configured to switch an authentication communication interval or an authentication communication time within the predetermined period of the request signal output from the transmission circuit of the control device if the authentication communication is not performed for a predetermined amount of time.


Noguchi D.,National Institute of Technology, Miyakonojo College | Taneda H.,National Institute of Technology, Miyakonojo College | Higashimaru Y.,National Institute of Technology, Miyakonojo College | Kawano Y.,Honda Lock Manufacturing Co. | Sei F.,Honda Lock Manufacturing Co.
Japanese Journal of Applied Physics | Year: 2012

In light of the need to simplify combination sputtering systems and to use them to fabricate thin-film electronic materials, we fabricated a Ta 2O 5 solid electrolyte thin-film that exhibits superior ion conductivity by using combination sputtering with RF oxygen plasma irradiation. The formation of Ta 2O 5 thin films using this technique was confirmed by Rutherford backscattering spectroscopy and the effectiveness of the resulting thin film as a solid electrolyte was demonstrated by its ion conductivity, which was determined by AC impedance measurement. © 2012 The Japan Society of Applied Physics. Source


Noguchi D.,National Institute of Technology, Miyakonojo College | Eto T.,National Institute of Technology, Miyakonojo College | Kodama K.,National Institute of Technology, Miyakonojo College | Higashimaru Y.,National Institute of Technology, Miyakonojo College | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2011

We have developed a two-step deposition technique. In the first step, a TiO 2 nucleus is formed on a SiO 2 thin film by radical-assisted sputtering using reactive-mode sputtering and O 2 radicals. The second step is a growth step where TiO 2 is deposited at a high rate and at a low temperature on the nucleation layer using metallic-mode sputtering and O 2 radicals. The results were evaluated by transmission electron microscopy. They demonstrate that this deposition method can form TiO 2 thin films with high crystallinities from the growth boundary. The effectiveness of this method was also demonstrated by measuring the photocatalytic properties. © 2011 The Japan Society of Applied Physics. Source


Noguchi D.,National Institute of Technology, Miyakonojo College | Higashimaru Y.,National Institute of Technology, Miyakonojo College | Eto T.,National Institute of Technology, Miyakonojo College | Kodama K.,National Institute of Technology, Miyakonojo College | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2012

A nucleation layer forms in the nucleation step (the first step) of a two-step deposition method that we have developed for forming TiO 2 thin films. We found that the nucleation layer affects the crystallinity of TiO 2 thin films during the growth step (the second step). The crystallinity of the growth layer can be controlled by varying the kinetic energy of the sputter particles when they arrive at the substrate in the nucleation step. Since the nucleation density varies with the kinetic energy, the crystallinity is thought to improve, owing to the improvement in the nucleation density. © 2012 The Japan Society of Applied Physics. Source


Noguchi D.,National Institute of Technology, Miyakonojo College | Higashimaru Y.,National Institute of Technology, Miyakonojo College | Eto T.,National Institute of Technology, Miyakonojo College | Kodama K.,National Institute of Technology, Miyakonojo College | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2014

TiO2 films were deposited using a two-step growth process, in which an ultra-thin nucleation layer was first produced by reactive-mode sputtering, followed by a thicker growth layer by radical-assisted sputtering. The effect of the structure of the nucleation layer on the density, crystallinity and photocatalytic properties of the final films was investigated. The kinetic energy of sputtered particles reaching the substrate during the first growth step was also considered. This was found to affect the amount of three-dimensional island growth that occurred, and thus the number of seed particles and gaps between them. The optimum structure is found to be one in which few seed particles have undergone island growth, so that there are a large number of gaps. This not only produces a dense final structure, but the crystallinity is improved due to chemical annealing by radicals during the second growth step, leading to a film with excellent photocatalytic properties. This indicates the importance of an initial structure that facilitates absorption and diffusion of radicals. © 2014 The Japan Society of Applied Physics. Source

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