Tokorozawa, Japan
Tokorozawa, Japan

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Okada M.,University of Hyogo | Okada M.,Chiyoda Corporation | Kishiro T.,HOLON Co. | Ataka M.,HOLON Co. | And 3 more authors.
Microelectronic Engineering | Year: 2011

Nanoimprint lithography (NIL) is a simple process to fabricate nanostructure devices with high throughput and low cost. The mold fabrication process is an important factor to improve NIL technology. Adopting a seamless pattern mold fabrication process is expected to enhance throughput. In this study, we developed a seamless long line and space (L and S) pattern fabrication process by using an electron beam (EB) stepper. As a result, a seamless 200 nm line and 300 nm space pattern (120 mm long and 10 mm wide) was exposed on a 6 in. Si wafer. We also carried out thermal nanoimprinting using the seamless L and S pattern mold fabricated by using the EB stepper. We confirmed that the seamless L and S pattern was clearly imprinted on the resin. © 2011 Elsevier B.V. All rights reserved.

Okada M.,University of Hyogo | Okada M.,Chiyoda Corporation | Kishiro T.,HOLON Co. | Yanagihara K.,HOLON Co. | And 3 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2010

The nanoimprint molds are usually fabricated by electron beam (EB) lithography. In recent years, a large-area mold fabrication with a high throughput is required to use nanoimprint lithography to produce devices in mass production. Using a conventional EB system to fabricate a large-area mold requires a very long exposure. To shorten the time, the authors have newly developed an EB stepper. The hole pattern (300 nm hole and 600 nm pitch) was exposed on a whole 4 in. SiO2/Si substrate with ZEP-520A (ZEON Co.) positive resist by the stepper. The exposure time was only 15 min. After this exposure, the authors did reactive ion etching and thermal nanoimprinting by using the 4 in. SiO2/Si mold. The whole patterns on the 4 in. SiO2/Si mold were imprinted on a 4 in. Si substrate coated with ZEP-520A. © 2010 American Vacuum Society.

Tian M.,Semiconductor Manufacturing International | Wang J.,Holon Co. | Bandoh H.,Holon Co. | Guo E.,Semiconductor Manufacturing International | Lu M.,Semiconductor Manufacturing International
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

Mask pattern measurement becomes one of the main challenges for the quality evaluation of the mask which is applied with complex lithography optical effect correction. Traditional straight edge mask pattern is evaluated with 1-dimension Critical Dimension (CD) method. But for 2-dimension pattern especially the mask full filled with complex shapes OPC pattern, many special approaches are studied attempt to characterize 2D pattern from different points of view [1-5]. A simple CD's information and the traditional mask performance evaluation parameters, such as CD mean-to-target and CD uniformity, are no longer suitable to such 2D pattern due to lacking of the pattern's character descriptions. Therefore the CD performances may not represent the actual wafer printing result in many cases. In addition, non-straight pattern edge induces significant CD measure error which makes it difficult to clarify the real mask pattern making quality. This paper investigates a pattern contour based solution for 2D structure performance evaluation. The basic contours of GDS and CD-SEM image are extracted, overlapped and processed and then the edge roughness of SEM contour and the bias between the above two kinds of contour are adopted on 2D individual pattern performance's statistics. By utilizing this solution, the 2D pattern quality can be described quantitatively as two main aspects, shape and size with the results of edge roughness and bias. Generalize this solution, the 2D pattern's uniformity, mean size, or other performances, can be evaluated quantitatively in the similar way as well. This solution calculation bases on pattern contour, therefore the measure pattern is not restricted by its shape. © 2015 SPIE.

Yamada K.,Holon Corporation | Kitayama Y.,Holon Corporation | Fiekowsky P.,Springer
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

EUV lithography is expected to begin production in 2014. Production of successful EUV photomasks requires patterned mask inspection (PMI). The ultimate PMI tool is expected to utilize actinic (EUV) illumination. Development of such a tool is expected to require three years after funding. Current test EUV masks, such as 22 nm, can be inspected using 193 nm wavelength deep UV (DUV) inspection tools similar to those currently being used for DUV masks. The DUV inspection tools may be extended for the 16 nm node. However EUV production is expected to start with 11 nm node masks which cannot be inspected with proposed DUV inspection tools. Therefore E-beam inspection (EBI) is discussed as the interim PMI method. EBI has the advantage of high resolution and the disadvantages of low inspection speed and relative insensitivity to ML defects (in the multi-layer material). EBI inspection speed is limited by the pixel size, pixel capture rate and the number of electron columns. The pixel rate is limited by the detector time-resolution, the beam current, and the detection efficiency. Technical improvements in beam focus, secondary electron detection, and defect detection and analysis provide good performance for 22 nm node masks. We discuss the advances and show that performance can be extrapolated for 16 and 11 nm node patterned mask inspections. We present sensitivity and false-defect frequency results of using the Holon EBI tool on 22 nm test masks and a roadmap for extending its operation for use on 16 and 11 nm node masks for inspections requiring 2-5 hours per mask. © 2011 SPIE.

Santo I.,HOLON Corporation | Higuchi A.,HOLON Corporation | Anazawa M.,HOLON Corporation | Bandoh H.,HOLON Corporation
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

Contour extraction of complicated optical proximity correction (OPC) patterns for advanced photomasks is increasingly needed in addition to the conventional mask CD measurement. The lithography simulation based on contour extraction from the SEM images on photomasks is one of the efficient methods to assure adequacy of OPC patterns. In this paper, the function of the above-mentioned contour extraction, and the performance requirements for the CD-SEM for this function using Mask CD-SEM 'Z7', the latest product of HOLON, and the scheme to correct the distortion are explained. Furthermore, the perspectives of the application of our contour extraction method are outlined. © 2014 SPIE.

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