Higher Institute of Electronics and Digital Studies

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Nord-Pas-de-Calais, France
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Cutivet A.,Université de Sherbrooke | Cozette F.,Université de Sherbrooke | Cozette F.,Higher Institute of Electronics and Digital Studies | Bouchilaoun M.,Université de Sherbrooke | And 7 more authors.
IEEE Electron Device Letters | Year: 2017

This letter reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and source) at constant gate-to-source voltage. The dependence of gate resistance with temperature is used to extract the thermal impedance of the device in frequency domain via electrical measurement. This new method is validated on common-gate AlGaN/GaN high-electron-mobility transistors on Si substrate under different experimental conditions, which demonstrates its potential to provide complete dynamic self-heating models for power transistors. © 1980-2012 IEEE.


Grant
Agency: European Commission | Branch: FP7 | Program: NOE | Phase: ICT-2007.3.1 | Award Amount: 5.46M | Year: 2008

NANOSIL Network of Excellence aims to integrate at the European level the excellent European research laboratories and capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs) and disseminate the results in a wide scientific and industrial community.NANOSIL will explore and assess the science and technological aspects of nanodevices and operational regimes relevant to n\4 technology node and beyond. It will provide a forward-look for the industry, enabling informed decisions to be taken on technology development in order to speed up technological innovation. It will encompass flagship projects on nanoscale CMOS and post-CMOS. The activities will thus be centred on the More Moore and Beyond-CMOS domains but natural links will also been established with the other ENIAC areas. Within the Network there are all the critical facilities and expertise to occupy and transcend this space. We will propose innovative concepts, technologies and device architectures- with fabrication down to the finest features, and utilising a wide spectrum of advanced deposition and processing capabilities, extensive characterisation and world leading device modelling. This work will be carried out through a network of joint processing, characterisation and modelling platforms. The consortium will work closely with and take steering from European industry. It will feed back data and know-how on materials and devices that deliver the required performance. This critical interaction will strengthen European integration in nanoelectronics, help in decision-making by industry and ensure that Europe remains at the forefront of nanoelectronics for the next 2 3 decades.


Trachi Y.,French National Center for Scientific Research | Elbouchikhi E.,Higher Institute of Electronics and Digital Studies | Choqueuse V.,French National Center for Scientific Research | Benbouzid M.E.H.,French National Center for Scientific Research | Benbouzid M.E.H.,Shanghai Maritime University
IEEE Transactions on Industrial Electronics | Year: 2016

The main objective of this paper is to detect faults in induction machines using a condition monitoring architecture based on stator current measurements. Two types of fault are considered: bearing and broken rotor bars faults. The proposed architecture is based on high-resolution spectral analysis techniques also known as subspace techniques. These frequency estimation techniques allow to separate frequency components including frequencies close to the fundamental one. These frequencies correspond to fault sensitive frequencies. Once frequencies are estimated, their corresponding amplitudes are obtained by using the least squares estimator. Then, a fault severity criterion is derived from the amplitude estimates. The proposed methods were tested using experimental stator current signals issued from two induction motors with the considered faults. The experimental results show that the proposed architecture has the ability to efficiently and cost-effectively detect faults and identify their severity. © 2016 IEEE.


Kokosy A.,Higher Institute of Electronics and Digital Studies | Micea M.V.,Polytechnic University of Timişoara | Saey P.,Catholic University of Leuven
Proceedings - Frontiers in Education Conference, FIE | Year: 2015

Due to its high potential and encouraging results, project-based learning emerges as a highly interesting paradigm in the education systems worldwide. Moreover, robotics is an interdisciplinary field where students could learn and apply their skills in mechanics, electronics, computer science, mathematics and control engineering. This paper presents a robotics project-based learning methodology which focuses on collaborating with the industry to design, develop, evaluate, integrate and manage projects designated to be used in real-life applications. This learning method emphasizes and enables the students to apprehend the importance of fulfilling client requirements and the interactions with the client, the suppliers and with the other members of the team. The students, coached by a partner from industry, have the opportunity to apply and to improve their project management skills under a large-scale, highly complex project. This method is being applied since 2008 at ISEN Lille, France, with good results and significant impact. © 2014 IEEE.


Barthelemy H.,CNRS Institute Materials Microelectronics nanosciences of Provence | Bourdel S.,Aix - Marseille University | Kussener E.,Higher Institute of Electronics and Digital Studies | Vauche R.,Higher Institute of Electronics and Digital Studies
2013 IEEE 11th International New Circuits and Systems Conference, NEWCAS 2013 | Year: 2013

A Digital CMOS BPSK modulator is presented in this paper. PSPICE simulation results of the proposed modulator are presented using BSIM3v3 transistors process parameter of the TSMC-0.18μm 1.8V CMOS technology. Between 1.6V to 1.8V supply voltage, the carrier frequency of the proposed modulator is scalable between 2.3GHz and 2.6GHz. Due to its symmetry, the proposed digital BSK modulator is fully differential. © 2013 IEEE.


Niquet Y.-M.,Joseph Fourier University | Delerue C.,Higher Institute of Electronics and Digital Studies | Rideau D.,STMicroelectronics | Videau B.,Joseph Fourier University
IEEE Transactions on Electron Devices | Year: 2012

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an $sp{3}d{5}s \ast tight-binding model for electrons and a valence-force field model for phonons. The Boltzmann equation is then solved exactly for the low-field mobility. Compared to bulk Si, the electron mobilities are strongly reduced, but the hole mobilities can be enhanced in 〈111〉 and 〈110〉 NWs with diameters around 3.5 nm. The mobility, however, rapidly decreases with carrier concentration $10}{19&cm} -3. © 2012 IEEE.


Leonard I.,Higher Institute of Electronics and Digital Studies | Alfalou A.,Higher Institute of Electronics and Digital Studies | Brosseau C.,European University of Brittany
Applied Optics | Year: 2012

We suggest a new type of optimized composite filter, i.e., the asymmetric segmented phase-only filter (ASPOF), for improving the effectiveness of a VanderLugt correlator (VLC) when used for face identification. Basically, it consists in merging several reference images after application of a specific spectral optimization method. After segmentation of the spectral filter plane to several areas, each area is assigned to a single winner reference according to a new optimized criterion. The point of the paper is to show that this method offers a significant performance improvement on standard composite filters for face identification. We first briefly revisit composite filters [adapted, phase-only, inverse, compromise optimal, segmented, minimum average correlation energy, optimal trade-off maximum average correlation, and amplitude-modulated phase-only (AMPOF)], which are tools of choice for face recognition based on correlation techniques, and compare their performances with those of the ASPOF. We illustrate some of the drawbacks of current filters for several binary and grayscale image identifications. Next, we describe the optimization steps and introduce the ASPOF that can overcome these technical issues to improve the quality and the reliability of the correlation-based decision. We derive performance measures, i.e., PCE values and receiver operating characteristic curves, to confirm consistency of the results. We numerically find that this filter increases the recognition rate and decreases the false alarm rate. The results show that the discriminationof the ASPOFis comparable to that of the AMPOF, but the ASPOF is more robust than the trade-off maximum average correlation height against rotation and various types of noise sources. Our method has several features that make it amenable to experimental implementation using a VLC. © 2012 Optical Society of America.


Soulignac M.,Higher Institute of Electronics and Digital Studies
IEEE Transactions on Robotics | Year: 2011

This paper addresses the problem of path planning in strong current fields. In such situations, existing approaches are subject to incorrectness and incompleteness issues. That is, they may return physically infeasible paths or no path at all, even if a feasible path exists. That is why we propose here a new approach called the sliding wavefront expansion. This algorithm, which combine an appropriate cost function and continuous optimization techniques, guarantees the existence of a path with an arbitrary precision. The validity and the global optimality of the path are theoretically proven. Simulation results on realistic environments, which is based on actual wind charts, are also provided. © 2010 IEEE.


Allan G.,Higher Institute of Electronics and Digital Studies | Delerue C.,Higher Institute of Electronics and Digital Studies
Physical Review B - Condensed Matter and Materials Physics | Year: 2012

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the effects of the quantum confinement on the electronic structure of HgTe quantum dot nanocrystals. We calculate the optical absorption spectra of quantum dots with various shapes and diameters up to 10 nm. We show, using a configuration interaction approach, that excitonic effects are negligible in this range of sizes. Our predictions for the size dependence of the energy gap and for the optical spectra are consistent with recent experimental data. © 2012 American Physical Society.


Krzeminski C.D.,Higher Institute of Electronics and Digital Studies
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2012

Strain engineering is the main technological booster used by semiconductor companies for the 65 and 45 nm technology nodes to improve the transistor channel mobility and the electrical performance of logic devices. For 32 and 22 nm nodes, intense research work focuses on the integration and optimization of these different techniques by accumulating the effects of different stressors. Estimating the level and the distribution of the stress field generated in the channel by the fabrication process is a complex issue. The process simulation has a key role to play in order to face the many challenges associated with the stress engineering approach in terms of scalability, yield, and design. The objective of this paper is first to evaluate the stress distribution generated by the two most usual processing steps: contact etch stop liner and embedded SiGe stressors. Next, the final stress field in nanoscale device resulting of these intentional stress sources are evaluated. Process simulation has been able to quantify the global trend observed in relatively close correlation with several experimental studies. © 2012 American Vacuum Society.

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