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Makihara A.,High Reliability Engineering Corporation | Yokose T.,High Reliability Engineering Corporation | Tsuchiya Y.,High Reliability Engineering Corporation | Miyazaki Y.,High Reliability Engineering Corporation | And 7 more authors.
IEEE Transactions on Nuclear Science | Year: 2013

Redundant pairs of SOI transistors have been utilized as a Radiation Hardening-By-Design technique. Their applicability was subsequently extended for analog circuits, such as current mirror circuits, and successfully demonstrated with a phase-locked loop circuit. © 1963-2012 IEEE.

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